Thickness evaluation of deposited pureb layers in micro-/millimeter-sized windows to Si

V. Mohammadi, S. Ramesh, L. K. Nanver

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

13 Citations (Scopus)

Abstract

Resistance measurement structures are designed for monitoring thickness variations in nanometer-thin pure-boron (PureB) layers deposited on Si for (photo-)diode applications where angstrom-level variations have an impact on performance. In millimeter-large windows a fine resolution is achieved with metal-contact arrays patterned directly on the PureB. For micron-sized windows Kelvin structures provide a sensitive solution.

Original languageEnglish
Title of host publication2014 IEEE International Conference on Microelectronic Test Structures, ICMTS 2014 - Conference Proceedings
PublisherIEEE
Pages194-199
Number of pages6
ISBN (Print)9781479921928
DOIs
Publication statusPublished - 1 Jan 2014
Externally publishedYes
Event27th International Conference on Microelectronic Test Structures, ICMTS 2014 - Udine, Italy
Duration: 24 Mar 201427 Mar 2014
Conference number: 27
http://www.homepages.ed.ac.uk/ajw/ICMTS/prog14.pdf

Conference

Conference27th International Conference on Microelectronic Test Structures, ICMTS 2014
Abbreviated titleICMTS
CountryItaly
CityUdine
Period24/03/1427/03/14
Internet address

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Keywords

  • Chemical vapor deposition
  • Kelvin cross-bridge contact resistance measurement
  • Loading effects
  • Pure boron
  • Resistivity
  • Series resistance

Cite this

Mohammadi, V., Ramesh, S., & Nanver, L. K. (2014). Thickness evaluation of deposited pureb layers in micro-/millimeter-sized windows to Si. In 2014 IEEE International Conference on Microelectronic Test Structures, ICMTS 2014 - Conference Proceedings (pp. 194-199). [6841492] IEEE. https://doi.org/10.1109/ICMTS.2014.6841492