Thickness evaluation of deposited pureb layers in micro-/millimeter-sized windows to Si

V. Mohammadi; S. Ramesh; L. K. Nanver

doi:10.1109/ICMTS.2014.6841492

Thickness evaluation of deposited pureb layers in micro-/millimeter-sized windows to Si

V. Mohammadi, S. Ramesh, L. K. Nanver

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

16 Citations (Scopus)

Abstract

Resistance measurement structures are designed for monitoring thickness variations in nanometer-thin pure-boron (PureB) layers deposited on Si for (photo-)diode applications where angstrom-level variations have an impact on performance. In millimeter-large windows a fine resolution is achieved with metal-contact arrays patterned directly on the PureB. For micron-sized windows Kelvin structures provide a sensitive solution.

Original language	English
Title of host publication	2014 IEEE International Conference on Microelectronic Test Structures, ICMTS 2014 - Conference Proceedings
Publisher	IEEE
Pages	194-199
Number of pages	6
ISBN (Print)	9781479921928
DOIs	https://doi.org/10.1109/ICMTS.2014.6841492
Publication status	Published - 1 Jan 2014
Externally published	Yes
Event	27th International Conference on Microelectronic Test Structures, ICMTS 2014 - Udine, Italy Duration: 24 Mar 2014 → 27 Mar 2014 Conference number: 27 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog14.pdf

Conference

Conference	27th International Conference on Microelectronic Test Structures, ICMTS 2014
Abbreviated title	ICMTS
Country/Territory	Italy
City	Udine
Period	24/03/14 → 27/03/14
Internet address	http://www.homepages.ed.ac.uk/ajw/ICMTS/prog14.pdf

Keywords

Chemical vapor deposition
Kelvin cross-bridge contact resistance measurement
Loading effects
Pure boron
Resistivity
Series resistance

Access to Document

10.1109/ICMTS.2014.6841492

Cite this

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title = "Thickness evaluation of deposited pureb layers in micro-/millimeter-sized windows to Si",

abstract = "Resistance measurement structures are designed for monitoring thickness variations in nanometer-thin pure-boron (PureB) layers deposited on Si for (photo-)diode applications where angstrom-level variations have an impact on performance. In millimeter-large windows a fine resolution is achieved with metal-contact arrays patterned directly on the PureB. For micron-sized windows Kelvin structures provide a sensitive solution.",

keywords = "Chemical vapor deposition, Kelvin cross-bridge contact resistance measurement, Loading effects, Pure boron, Resistivity, Series resistance",

author = "V. Mohammadi and S. Ramesh and Nanver, {L. K.}",

year = "2014",

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doi = "10.1109/ICMTS.2014.6841492",

language = "English",

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pages = "194--199",

booktitle = "2014 IEEE International Conference on Microelectronic Test Structures, ICMTS 2014 - Conference Proceedings",

publisher = "IEEE",

address = "United States",

note = "27th International Conference on Microelectronic Test Structures, ICMTS 2014, ICMTS ; Conference date: 24-03-2014 Through 27-03-2014",

url = "http://www.homepages.ed.ac.uk/ajw/ICMTS/prog14.pdf",

}

Mohammadi, V, Ramesh, S & Nanver, LK 2014, Thickness evaluation of deposited pureb layers in micro-/millimeter-sized windows to Si. in 2014 IEEE International Conference on Microelectronic Test Structures, ICMTS 2014 - Conference Proceedings., 6841492, IEEE, pp. 194-199, 27th International Conference on Microelectronic Test Structures, ICMTS 2014, Udine, Italy, 24/03/14. https://doi.org/10.1109/ICMTS.2014.6841492

Thickness evaluation of deposited pureb layers in micro-/millimeter-sized windows to Si. / Mohammadi, V.; Ramesh, S.; Nanver, L. K.
2014 IEEE International Conference on Microelectronic Test Structures, ICMTS 2014 - Conference Proceedings. IEEE, 2014. p. 194-199 6841492.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Thickness evaluation of deposited pureb layers in micro-/millimeter-sized windows to Si

AU - Mohammadi, V.

AU - Ramesh, S.

AU - Nanver, L. K.

N1 - Conference code: 27

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Resistance measurement structures are designed for monitoring thickness variations in nanometer-thin pure-boron (PureB) layers deposited on Si for (photo-)diode applications where angstrom-level variations have an impact on performance. In millimeter-large windows a fine resolution is achieved with metal-contact arrays patterned directly on the PureB. For micron-sized windows Kelvin structures provide a sensitive solution.

AB - Resistance measurement structures are designed for monitoring thickness variations in nanometer-thin pure-boron (PureB) layers deposited on Si for (photo-)diode applications where angstrom-level variations have an impact on performance. In millimeter-large windows a fine resolution is achieved with metal-contact arrays patterned directly on the PureB. For micron-sized windows Kelvin structures provide a sensitive solution.

KW - Chemical vapor deposition

KW - Kelvin cross-bridge contact resistance measurement

KW - Loading effects

KW - Pure boron

KW - Resistivity

KW - Series resistance

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SN - 9781479921928

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EP - 199

BT - 2014 IEEE International Conference on Microelectronic Test Structures, ICMTS 2014 - Conference Proceedings

PB - IEEE

T2 - 27th International Conference on Microelectronic Test Structures, ICMTS 2014

Y2 - 24 March 2014 through 27 March 2014

ER -

Thickness evaluation of deposited pureb layers in micro-/millimeter-sized windows to Si

Abstract

Conference

Keywords

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