This work extends our previously reported idea of using the nano-scale conductive link (antifuse) as a combined heating /detecting element in a Pellistor-type gas sensor. Our new thin-film antifuse is designed in such a way that the oxide, for minimising the bulk influence on surface temperature, sufficiently thermally isolates the antifuse. The attention is paid to pre-determination of the antifuse location regarding the surface area. For the thin-film antifuses, the newly designed process flow employs standard LOCOS oxidation and CVD technology. Practical realisation of the first generation of thin-film antifuses is completed. Thermo-electrical characteristics of the devices are being under investigation.
|Title of host publication||Proceedings of Semiconductor Sensor and Actuator Technology SeSens 2001|
|Place of Publication||Utrecht, The Netherlands|
|Number of pages||4|
|Publication status||Published - 30 Nov 2001|
- Gas sensor
Kovalgin, A. Y., Holleman, J., van den Berg, A., & Wallinga, H. (2001). Thin-film antifuses for pellistor type gas sensors. In Proceedings of Semiconductor Sensor and Actuator Technology SeSens 2001 (pp. 809-812). Utrecht, The Netherlands: STW.