Thin-film antifuses for pellistor type gas sensors

Alexeij Y. Kovalgin, J. Holleman, Albert van den Berg, Hans Wallinga

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Abstract

    This work extends our previously reported idea of using the nano-scale conductive link (antifuse) as a combined heating /detecting element in a Pellistor-type gas sensor. Our new thin-film antifuse is designed in such a way that the oxide, for minimising the bulk influence on surface temperature, sufficiently thermally isolates the antifuse. The attention is paid to pre-determination of the antifuse location regarding the surface area. For the thin-film antifuses, the newly designed process flow employs standard LOCOS oxidation and CVD technology. Practical realisation of the first generation of thin-film antifuses is completed. Thermo-electrical characteristics of the devices are being under investigation.
    Original languageUndefined
    Title of host publicationProceedings of Semiconductor Sensor and Actuator Technology SeSens 2001
    Place of PublicationUtrecht, The Netherlands
    PublisherSTW
    Pages809-812
    Number of pages4
    ISBN (Print)90-73461-29-4
    Publication statusPublished - 30 Nov 2001

    Keywords

    • Gas sensor
    • EWI-15633
    • IR-42212
    • nano-hotspot
    • Antifuse
    • METIS-200764

    Cite this

    Kovalgin, A. Y., Holleman, J., van den Berg, A., & Wallinga, H. (2001). Thin-film antifuses for pellistor type gas sensors. In Proceedings of Semiconductor Sensor and Actuator Technology SeSens 2001 (pp. 809-812). Utrecht, The Netherlands: STW.