Thin-film antifuses for pellistor type gas sensors

Alexeij Y. Kovalgin, J. Holleman, Albert van den Berg, Hans Wallinga

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

Abstract

This work extends our previously reported idea of using the nano-scale conductive link (antifuse) as a combined heating /detecting element in a Pellistor-type gas sensor. Our new thin-film antifuse is designed in such a way that the oxide, for minimising the bulk influence on surface temperature, sufficiently thermally isolates the antifuse. The attention is paid to pre-determination of the antifuse location regarding the surface area. For the thin-film antifuses, the newly designed process flow employs standard LOCOS oxidation and CVD technology. Practical realisation of the first generation of thin-film antifuses is completed. Thermo-electrical characteristics of the devices are being under investigation.
Original languageUndefined
Title of host publicationProceedings of Semiconductor Sensor and Actuator Technology SeSens 2001
Place of PublicationUtrecht, The Netherlands
PublisherSTW
Pages809-812
Number of pages4
ISBN (Print)90-73461-29-4
Publication statusPublished - 30 Nov 2001

Keywords

  • Gas sensor
  • EWI-15633
  • IR-42212
  • nano-hotspot
  • Antifuse
  • METIS-200764

Cite this

Kovalgin, A. Y., Holleman, J., van den Berg, A., & Wallinga, H. (2001). Thin-film antifuses for pellistor type gas sensors. In Proceedings of Semiconductor Sensor and Actuator Technology SeSens 2001 (pp. 809-812). Utrecht, The Netherlands: STW.
Kovalgin, Alexeij Y. ; Holleman, J. ; van den Berg, Albert ; Wallinga, Hans. / Thin-film antifuses for pellistor type gas sensors. Proceedings of Semiconductor Sensor and Actuator Technology SeSens 2001. Utrecht, The Netherlands : STW, 2001. pp. 809-812
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abstract = "This work extends our previously reported idea of using the nano-scale conductive link (antifuse) as a combined heating /detecting element in a Pellistor-type gas sensor. Our new thin-film antifuse is designed in such a way that the oxide, for minimising the bulk influence on surface temperature, sufficiently thermally isolates the antifuse. The attention is paid to pre-determination of the antifuse location regarding the surface area. For the thin-film antifuses, the newly designed process flow employs standard LOCOS oxidation and CVD technology. Practical realisation of the first generation of thin-film antifuses is completed. Thermo-electrical characteristics of the devices are being under investigation.",
keywords = "Gas sensor, EWI-15633, IR-42212, nano-hotspot, Antifuse, METIS-200764",
author = "Kovalgin, {Alexeij Y.} and J. Holleman and {van den Berg}, Albert and Hans Wallinga",
year = "2001",
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Kovalgin, AY, Holleman, J, van den Berg, A & Wallinga, H 2001, Thin-film antifuses for pellistor type gas sensors. in Proceedings of Semiconductor Sensor and Actuator Technology SeSens 2001. STW, Utrecht, The Netherlands, pp. 809-812.

Thin-film antifuses for pellistor type gas sensors. / Kovalgin, Alexeij Y.; Holleman, J.; van den Berg, Albert; Wallinga, Hans.

Proceedings of Semiconductor Sensor and Actuator Technology SeSens 2001. Utrecht, The Netherlands : STW, 2001. p. 809-812.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

TY - GEN

T1 - Thin-film antifuses for pellistor type gas sensors

AU - Kovalgin, Alexeij Y.

AU - Holleman, J.

AU - van den Berg, Albert

AU - Wallinga, Hans

PY - 2001/11/30

Y1 - 2001/11/30

N2 - This work extends our previously reported idea of using the nano-scale conductive link (antifuse) as a combined heating /detecting element in a Pellistor-type gas sensor. Our new thin-film antifuse is designed in such a way that the oxide, for minimising the bulk influence on surface temperature, sufficiently thermally isolates the antifuse. The attention is paid to pre-determination of the antifuse location regarding the surface area. For the thin-film antifuses, the newly designed process flow employs standard LOCOS oxidation and CVD technology. Practical realisation of the first generation of thin-film antifuses is completed. Thermo-electrical characteristics of the devices are being under investigation.

AB - This work extends our previously reported idea of using the nano-scale conductive link (antifuse) as a combined heating /detecting element in a Pellistor-type gas sensor. Our new thin-film antifuse is designed in such a way that the oxide, for minimising the bulk influence on surface temperature, sufficiently thermally isolates the antifuse. The attention is paid to pre-determination of the antifuse location regarding the surface area. For the thin-film antifuses, the newly designed process flow employs standard LOCOS oxidation and CVD technology. Practical realisation of the first generation of thin-film antifuses is completed. Thermo-electrical characteristics of the devices are being under investigation.

KW - Gas sensor

KW - EWI-15633

KW - IR-42212

KW - nano-hotspot

KW - Antifuse

KW - METIS-200764

M3 - Conference contribution

SN - 90-73461-29-4

SP - 809

EP - 812

BT - Proceedings of Semiconductor Sensor and Actuator Technology SeSens 2001

PB - STW

CY - Utrecht, The Netherlands

ER -

Kovalgin AY, Holleman J, van den Berg A, Wallinga H. Thin-film antifuses for pellistor type gas sensors. In Proceedings of Semiconductor Sensor and Actuator Technology SeSens 2001. Utrecht, The Netherlands: STW. 2001. p. 809-812