Abstract
This work extends our previously reported idea of using the nano-scale conductive link (antifuse) as a combined heating /detecting element in a Pellistor-type gas sensor. Our new thin-film antifuse is designed in such a way that the oxide, for minimising the bulk influence on surface temperature, sufficiently thermally isolates the antifuse. The attention is paid to pre-determination of the antifuse location regarding the surface area. For the thin-film antifuses, the newly designed process flow employs standard LOCOS oxidation and CVD technology. Practical realisation of the first generation of thin-film antifuses is completed. Thermo-electrical characteristics of the devices are being under investigation.
| Original language | Undefined |
|---|---|
| Title of host publication | Proceedings of Semiconductor Sensor and Actuator Technology SeSens 2001 |
| Place of Publication | Utrecht, The Netherlands |
| Publisher | STW |
| Pages | 809-812 |
| Number of pages | 4 |
| ISBN (Print) | 90-73461-29-4 |
| Publication status | Published - 30 Nov 2001 |
| Event | STW/SeSence01 Conference: STW/SeSence01 - Veldhoven, the Netherlands Duration: 30 Nov 2001 → 30 Nov 2001 |
Conference
| Conference | STW/SeSence01 Conference |
|---|---|
| City | Veldhoven, the Netherlands |
| Period | 30/11/01 → 30/11/01 |
Keywords
- Gas sensor
- EWI-15633
- IR-42212
- nano-hotspot
- Antifuse
- METIS-200764