Thin-Film layers with Interfaces that reduce RF Losses on High-Resistivity Silicon Substrates

S. B. Evseev; S. Milosavljevic; L. K. Nanver

doi:10.1109/BCTM.2017.8112903

Thin-Film layers with Interfaces that reduce RF Losses on High-Resistivity Silicon Substrates

S. B. Evseev, S. Milosavljevic, L. K. Nanver

University of Twente

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Radio-Frequency (RF) losses on High-Resistivity Silicon (HRS) substrates were studied for several different surface passivation layers comprising thin-films of SiC, SiN and SiO₂ In many combinations, losses from conductive surface channels were reduced and increasing the number of interfaces between thin-films was found to be beneficial. In some cases the surface losses were completely eliminated. For example, with plasma-enhanced chemical-vapor deposition (PECVD) α-SiC layers up to a few tens of nm thick and exposed to nitridation or SiN growth at 850°C to form a SiC:N interface layer, values for the total losses of 1.6 dB/cm were achieved. Analysis of these layers was performed by using temperature dependent measurements of the RF losses on Coplanar Waveguides (CPWs), the capacitance-voltage characteristics and the sheet resistance along the Si surface. The overall results can be explained by assuming that the thin-films are so defected that they allow vertical current paths to highly-resistive interface layers where both fixed and mobile charge can be stored.

Original language	English
Title of host publication	2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2017
Publisher	IEEE
Pages	21-24
Number of pages	4
Volume	2017-October
ISBN (Electronic)	978-1-5090-6383-3
ISBN (Print)	978-1-5090-6384-0
DOIs	https://doi.org/10.1109/BCTM.2017.8112903
Publication status	Published - 15 Nov 2017
Event	IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2017 - Miami, United States Duration: 19 Oct 2017 → 21 Oct 2017

Conference

Conference	IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2017
Abbreviated title	BCTM 2017
Country/Territory	United States
City	Miami
Period	19/10/17 → 21/10/17

Keywords

Capacitance-voltage measurements
High-resistivity silicon
Interface
Nitidation
RF losses
Sheet resistance
SiC
SiN
Temperature dependence
Thin-film

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10.1109/BCTM.2017.8112903

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title = "Thin-Film layers with Interfaces that reduce RF Losses on High-Resistivity Silicon Substrates",

abstract = "Radio-Frequency (RF) losses on High-Resistivity Silicon (HRS) substrates were studied for several different surface passivation layers comprising thin-films of SiC, SiN and SiO2 In many combinations, losses from conductive surface channels were reduced and increasing the number of interfaces between thin-films was found to be beneficial. In some cases the surface losses were completely eliminated. For example, with plasma-enhanced chemical-vapor deposition (PECVD) α-SiC layers up to a few tens of nm thick and exposed to nitridation or SiN growth at 850°C to form a SiC:N interface layer, values for the total losses of 1.6 dB/cm were achieved. Analysis of these layers was performed by using temperature dependent measurements of the RF losses on Coplanar Waveguides (CPWs), the capacitance-voltage characteristics and the sheet resistance along the Si surface. The overall results can be explained by assuming that the thin-films are so defected that they allow vertical current paths to highly-resistive interface layers where both fixed and mobile charge can be stored.",

keywords = "Capacitance-voltage measurements, High-resistivity silicon, Interface, Nitidation, RF losses, Sheet resistance, SiC, SiN, Temperature dependence, Thin-film",

author = "Evseev, {S. B.} and S. Milosavljevic and Nanver, {L. K.}",

year = "2017",

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booktitle = "2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2017",

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Evseev, SB, Milosavljevic, S & Nanver, LK 2017, Thin-Film layers with Interfaces that reduce RF Losses on High-Resistivity Silicon Substrates. in 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2017. vol. 2017-October, 8112903, IEEE, pp. 21-24, IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2017, Miami, Florida, United States, 19/10/17. https://doi.org/10.1109/BCTM.2017.8112903

Thin-Film layers with Interfaces that reduce RF Losses on High-Resistivity Silicon Substrates. / Evseev, S. B.; Milosavljevic, S.; Nanver, L. K.
2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2017. Vol. 2017-October IEEE, 2017. p. 21-24 8112903.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Nanver, L. K.

PY - 2017/11/15

Y1 - 2017/11/15

N2 - Radio-Frequency (RF) losses on High-Resistivity Silicon (HRS) substrates were studied for several different surface passivation layers comprising thin-films of SiC, SiN and SiO2 In many combinations, losses from conductive surface channels were reduced and increasing the number of interfaces between thin-films was found to be beneficial. In some cases the surface losses were completely eliminated. For example, with plasma-enhanced chemical-vapor deposition (PECVD) α-SiC layers up to a few tens of nm thick and exposed to nitridation or SiN growth at 850°C to form a SiC:N interface layer, values for the total losses of 1.6 dB/cm were achieved. Analysis of these layers was performed by using temperature dependent measurements of the RF losses on Coplanar Waveguides (CPWs), the capacitance-voltage characteristics and the sheet resistance along the Si surface. The overall results can be explained by assuming that the thin-films are so defected that they allow vertical current paths to highly-resistive interface layers where both fixed and mobile charge can be stored.

AB - Radio-Frequency (RF) losses on High-Resistivity Silicon (HRS) substrates were studied for several different surface passivation layers comprising thin-films of SiC, SiN and SiO2 In many combinations, losses from conductive surface channels were reduced and increasing the number of interfaces between thin-films was found to be beneficial. In some cases the surface losses were completely eliminated. For example, with plasma-enhanced chemical-vapor deposition (PECVD) α-SiC layers up to a few tens of nm thick and exposed to nitridation or SiN growth at 850°C to form a SiC:N interface layer, values for the total losses of 1.6 dB/cm were achieved. Analysis of these layers was performed by using temperature dependent measurements of the RF losses on Coplanar Waveguides (CPWs), the capacitance-voltage characteristics and the sheet resistance along the Si surface. The overall results can be explained by assuming that the thin-films are so defected that they allow vertical current paths to highly-resistive interface layers where both fixed and mobile charge can be stored.

KW - Capacitance-voltage measurements

KW - High-resistivity silicon

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KW - Nitidation

KW - RF losses

KW - Sheet resistance

KW - SiC

KW - SiN

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KW - Thin-film

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M3 - Conference contribution

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SN - 978-1-5090-6384-0

VL - 2017-October

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EP - 24

BT - 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2017

PB - IEEE

T2 - IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2017

Y2 - 19 October 2017 through 21 October 2017

ER -

Thin-Film layers with Interfaces that reduce RF Losses on High-Resistivity Silicon Substrates

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Keywords

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