Thin-Film layers with Interfaces that reduce RF Losses on High-Resistivity Silicon Substrates

S. B. Evseev, S. Milosavljevic, L. K. Nanver

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Abstract

Radio-Frequency (RF) losses on High-Resistivity Silicon (HRS) substrates were studied for several different surface passivation layers comprising thin-films of SiC, SiN and SiO2 In many combinations, losses from conductive surface channels were reduced and increasing the number of interfaces between thin-films was found to be beneficial. In some cases the surface losses were completely eliminated. For example, with plasma-enhanced chemical-vapor deposition (PECVD) α-SiC layers up to a few tens of nm thick and exposed to nitridation or SiN growth at 850°C to form a SiC:N interface layer, values for the total losses of 1.6 dB/cm were achieved. Analysis of these layers was performed by using temperature dependent measurements of the RF losses on Coplanar Waveguides (CPWs), the capacitance-voltage characteristics and the sheet resistance along the Si surface. The overall results can be explained by assuming that the thin-films are so defected that they allow vertical current paths to highly-resistive interface layers where both fixed and mobile charge can be stored.

Original languageEnglish
Title of host publication2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2017
PublisherIEEE
Pages21-24
Number of pages4
Volume2017-October
ISBN (Electronic)978-1-5090-6383-3
ISBN (Print)978-1-5090-6384-0
DOIs
Publication statusPublished - 15 Nov 2017
EventIEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2017 - Miami, United States
Duration: 19 Oct 201721 Oct 2017

Conference

ConferenceIEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM 2017
Abbreviated titleBCTM 2017
CountryUnited States
CityMiami
Period19/10/1721/10/17

Keywords

  • Capacitance-voltage measurements
  • High-resistivity silicon
  • Interface
  • Nitidation
  • RF losses
  • Sheet resistance
  • SiC
  • SiN
  • Temperature dependence
  • Thin-film

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