Thin-film trilayer manganate junctions: discussion

J. Z. Sun*, Thom T.M. Palstra

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

31 Citations (Scopus)
8 Downloads (Pure)

Abstract

Spin-dependent conductance across a manganate-barrier-manganate junction has recently been demonstrated. The junction is a La0.67Sr0.33MnO3-SrTiO3-La 0.67Sr0.33 MnO3 trilayer device supporting current-perpendicular transport. Large magnetoresistance of up to a factor of five change was observed in these junctions at 4.2 K in a relatively low field of the order of 100 Oe. Temperature and bias dependent studies revealed a complex junction interface structure whose materials physics has yet to be understood.

Original languageEnglish
Pages (from-to)1693-1712
Number of pages20
JournalPhilosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences
Volume356
Issue number1742
DOIs
Publication statusPublished - 15 Jul 1998
Externally publishedYes

Keywords

  • Low-field magnetoresistance
  • Manganite
  • Spin-dependent transport
  • Trilayer functions
  • Tunnelling

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