Thin-film trilayer manganate junctions: discussion

J. Z. Sun; Thom T.M.  Palstra

doi:10.1098/rsta.1998.0242

Thin-film trilayer manganate junctions: discussion

J. Z. Sun^*, Thom T.M. Palstra

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Spin-dependent conductance across a manganate-barrier-manganate junction has recently been demonstrated. The junction is a La_0.67Sr_0.33MnO₃-SrTiO₃-La _0.67Sr_0.33 MnO₃ trilayer device supporting current-perpendicular transport. Large magnetoresistance of up to a factor of five change was observed in these junctions at 4.2 K in a relatively low field of the order of 100 Oe. Temperature and bias dependent studies revealed a complex junction interface structure whose materials physics has yet to be understood.

Original language	English
Pages (from-to)	1693-1712
Number of pages	20
Journal	Philosophical Transactions of the Royal Society of London A. Mathematical, Physical and Engineering Sciences
Volume	356
Issue number	1742
DOIs	https://doi.org/10.1098/rsta.1998.0242
Publication status	Published - 15 Jul 1998
Externally published	Yes

Keywords

Low-field magnetoresistance
Manganite
Spin-dependent transport
Trilayer functions
Tunnelling

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AB - Spin-dependent conductance across a manganate-barrier-manganate junction has recently been demonstrated. The junction is a La0.67Sr0.33MnO3-SrTiO3-La 0.67Sr0.33 MnO3 trilayer device supporting current-perpendicular transport. Large magnetoresistance of up to a factor of five change was observed in these junctions at 4.2 K in a relatively low field of the order of 100 Oe. Temperature and bias dependent studies revealed a complex junction interface structure whose materials physics has yet to be understood.

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KW - Trilayer functions

KW - Tunnelling

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ER -

Thin-film trilayer manganate junctions: discussion

Abstract

Keywords

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