Thin-film ZnO as micromechanical actuator at low frequencies

F.R. Blom, D.J. Yntema, F.C.M. van de Pol, M. Elwenspoek, J.H.J. Fluitman, Th.J.A. Popma

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Abstract

A new model is proposed for the low-frequency piezoelectric activity of ZnO films grown on CVD SiO2. In this MOS structure, with ZnO as the semiconductor, a depletion layer is induced by means of a d.c. bias voltage. Using standard semiconductor theory, an expression is derived relating the electric field in this depletion layer with the driving a.c. and d.c. voltages. Due to the built-in charge at the ZnO-SiO2 interface, a depletion layer exists, even when no d.c. bias is applied. We measured the vibration amplitude at resonance of the tip of a silicon cantilever, upon which the MOS structure was deposited, as function of a.c. and d.c. voltages. The results show good agreement with calculated curves.
Original languageEnglish
Pages (from-to)226-228
Number of pages3
JournalSensors and actuators. A: Physical
Volume21
Issue number1-3
DOIs
Publication statusPublished - Feb 1990
Event5th International Conference on Solid-State Sensors and Actuators and Eurosensors III, Transducers '90 - Eurosensors III - Montreux, Switzerland
Duration: 25 Jun 198930 Jun 1989
Conference number: 5

Fingerprint

depletion
Actuators
actuators
Semiconductor materials
low frequencies
Thin films
Electric potential
electric potential
Silicon
thin films
Bias voltage
Vibrations (mechanical)
Chemical vapor deposition
Electric fields
vapor deposition
vibration
electric fields
silicon
curves

Cite this

Blom, F. R., Yntema, D. J., van de Pol, F. C. M., Elwenspoek, M., Fluitman, J. H. J., & Popma, T. J. A. (1990). Thin-film ZnO as micromechanical actuator at low frequencies. Sensors and actuators. A: Physical, 21(1-3), 226-228. https://doi.org/10.1016/0924-4247(90)85044-5
Blom, F.R. ; Yntema, D.J. ; van de Pol, F.C.M. ; Elwenspoek, M. ; Fluitman, J.H.J. ; Popma, Th.J.A. / Thin-film ZnO as micromechanical actuator at low frequencies. In: Sensors and actuators. A: Physical. 1990 ; Vol. 21, No. 1-3. pp. 226-228.
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Blom, FR, Yntema, DJ, van de Pol, FCM, Elwenspoek, M, Fluitman, JHJ & Popma, TJA 1990, 'Thin-film ZnO as micromechanical actuator at low frequencies' Sensors and actuators. A: Physical, vol. 21, no. 1-3, pp. 226-228. https://doi.org/10.1016/0924-4247(90)85044-5

Thin-film ZnO as micromechanical actuator at low frequencies. / Blom, F.R.; Yntema, D.J.; van de Pol, F.C.M.; Elwenspoek, M.; Fluitman, J.H.J.; Popma, Th.J.A.

In: Sensors and actuators. A: Physical, Vol. 21, No. 1-3, 02.1990, p. 226-228.

Research output: Contribution to journalArticleAcademicpeer-review

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AU - Blom, F.R.

AU - Yntema, D.J.

AU - van de Pol, F.C.M.

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AU - Fluitman, J.H.J.

AU - Popma, Th.J.A.

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N2 - A new model is proposed for the low-frequency piezoelectric activity of ZnO films grown on CVD SiO2. In this MOS structure, with ZnO as the semiconductor, a depletion layer is induced by means of a d.c. bias voltage. Using standard semiconductor theory, an expression is derived relating the electric field in this depletion layer with the driving a.c. and d.c. voltages. Due to the built-in charge at the ZnO-SiO2 interface, a depletion layer exists, even when no d.c. bias is applied. We measured the vibration amplitude at resonance of the tip of a silicon cantilever, upon which the MOS structure was deposited, as function of a.c. and d.c. voltages. The results show good agreement with calculated curves.

AB - A new model is proposed for the low-frequency piezoelectric activity of ZnO films grown on CVD SiO2. In this MOS structure, with ZnO as the semiconductor, a depletion layer is induced by means of a d.c. bias voltage. Using standard semiconductor theory, an expression is derived relating the electric field in this depletion layer with the driving a.c. and d.c. voltages. Due to the built-in charge at the ZnO-SiO2 interface, a depletion layer exists, even when no d.c. bias is applied. We measured the vibration amplitude at resonance of the tip of a silicon cantilever, upon which the MOS structure was deposited, as function of a.c. and d.c. voltages. The results show good agreement with calculated curves.

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