Thin-film ZnO as micromechanical actuator at low frequencies

F.R. Blom; D.J. Yntema; F.C.M. van de Pol; M. Elwenspoek; J.H.J. Fluitman; Th.J.A. Popma

doi:10.1016/0924-4247(90)85044-5

Thin-film ZnO as micromechanical actuator at low frequencies

F.R. Blom
, D.J. Yntema
, F.C.M. van de Pol
, M. Elwenspoek
, J.H.J. Fluitman
, Th.J.A. Popma

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

A new model is proposed for the low-frequency piezoelectric activity of ZnO films grown on CVD SiO2. In this MOS structure, with ZnO as the semiconductor, a depletion layer is induced by means of a d.c. bias voltage. Using standard semiconductor theory, an expression is derived relating the electric field in this depletion layer with the driving a.c. and d.c. voltages. Due to the built-in charge at the ZnO-SiO2 interface, a depletion layer exists, even when no d.c. bias is applied. We measured the vibration amplitude at resonance of the tip of a silicon cantilever, upon which the MOS structure was deposited, as function of a.c. and d.c. voltages. The results show good agreement with calculated curves.

Original language	English
Pages (from-to)	226-228
Number of pages	3
Journal	Sensors and Actuators A: Physical
Volume	21
Issue number	1-3
DOIs	https://doi.org/10.1016/0924-4247(90)85044-5
Publication status	Published - Feb 1990
Event	5th International Conference on Solid-State Sensors and Actuators and Eurosensors III, Transducers '90 - Eurosensors III - Montreux, Switzerland Duration: 25 Jun 1989 → 30 Jun 1989 Conference number: 5

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title = "Thin-film ZnO as micromechanical actuator at low frequencies",

abstract = "A new model is proposed for the low-frequency piezoelectric activity of ZnO films grown on CVD SiO2. In this MOS structure, with ZnO as the semiconductor, a depletion layer is induced by means of a d.c. bias voltage. Using standard semiconductor theory, an expression is derived relating the electric field in this depletion layer with the driving a.c. and d.c. voltages. Due to the built-in charge at the ZnO-SiO2 interface, a depletion layer exists, even when no d.c. bias is applied. We measured the vibration amplitude at resonance of the tip of a silicon cantilever, upon which the MOS structure was deposited, as function of a.c. and d.c. voltages. The results show good agreement with calculated curves.",

author = "F.R. Blom and D.J. Yntema and \{van de Pol\}, F.C.M. and M. Elwenspoek and J.H.J. Fluitman and Th.J.A. Popma",

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language = "English",

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TY - JOUR

T1 - Thin-film ZnO as micromechanical actuator at low frequencies

AU - Blom, F.R.

AU - Yntema, D.J.

AU - van de Pol, F.C.M.

AU - Elwenspoek, M.

AU - Fluitman, J.H.J.

AU - Popma, Th.J.A.

N1 - Conference code: 5

PY - 1990/2

Y1 - 1990/2

N2 - A new model is proposed for the low-frequency piezoelectric activity of ZnO films grown on CVD SiO2. In this MOS structure, with ZnO as the semiconductor, a depletion layer is induced by means of a d.c. bias voltage. Using standard semiconductor theory, an expression is derived relating the electric field in this depletion layer with the driving a.c. and d.c. voltages. Due to the built-in charge at the ZnO-SiO2 interface, a depletion layer exists, even when no d.c. bias is applied. We measured the vibration amplitude at resonance of the tip of a silicon cantilever, upon which the MOS structure was deposited, as function of a.c. and d.c. voltages. The results show good agreement with calculated curves.

AB - A new model is proposed for the low-frequency piezoelectric activity of ZnO films grown on CVD SiO2. In this MOS structure, with ZnO as the semiconductor, a depletion layer is induced by means of a d.c. bias voltage. Using standard semiconductor theory, an expression is derived relating the electric field in this depletion layer with the driving a.c. and d.c. voltages. Due to the built-in charge at the ZnO-SiO2 interface, a depletion layer exists, even when no d.c. bias is applied. We measured the vibration amplitude at resonance of the tip of a silicon cantilever, upon which the MOS structure was deposited, as function of a.c. and d.c. voltages. The results show good agreement with calculated curves.

U2 - 10.1016/0924-4247(90)85044-5

DO - 10.1016/0924-4247(90)85044-5

M3 - Article

SN - 0924-4247

VL - 21

SP - 226

EP - 228

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

IS - 1-3

T2 - 5th International Conference on Solid-State Sensors and Actuators and Eurosensors III, Transducers '90 - Eurosensors III

Y2 - 25 June 1989 through 30 June 1989

ER -

Thin-film ZnO as micromechanical actuator at low frequencies

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