Three routes to increase the output current of the spin-valve transistor

O.M.J. van 't Erve, R. Jansen, F.M. Postma, J.C. Lodder

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    Summary form only given. The spin-valve transistor (SVT) is a three terminal device in which hot electrons are emitted over a Schottky barrier, they cross a metallic spin valve and are collected with energyand momentum selection. While SVTs with high relative magnetic response (above 300% at room temperature) have been made, the absolute value of the output (collector) current (1c) is still low (I/sub C/ = 10nA at I/sub E/ = 2mA). Although this is sufficient to study spin-dependent hot-electron transport across magnetic layers, it is certainly a disadvantage for practical applications. We will present three routes to increase the collector current by enhancing the transfer ratio.
    Original languageUndefined
    Publication statusPublished - 2002
    Event2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - RAI Congress Center, Amsterdam, Netherlands
    Duration: 28 Apr 20022 May 2002


    Conference2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
    Abbreviated titleINTERMAG Europe 2002


    • IR-55893

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