Three routes to increase the output current of the spin-valve transistor

O.M.J. van 't Erve; R. Jansen; F.M. Postma; J.C. Lodder

doi:10.1109/INTMAG.2002.1001529

Three routes to increase the output current of the spin-valve transistor

O.M.J. van 't Erve, R. Jansen, F.M. Postma, J.C. Lodder

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Abstract

Summary form only given. The spin-valve transistor (SVT) is a three terminal device in which hot electrons are emitted over a Schottky barrier, they cross a metallic spin valve and are collected with energyand momentum selection. While SVTs with high relative magnetic response (above 300% at room temperature) have been made, the absolute value of the output (collector) current (1c) is still low (I/sub C/ = 10nA at I/sub E/ = 2mA). Although this is sufficient to study spin-dependent hot-electron transport across magnetic layers, it is certainly a disadvantage for practical applications. We will present three routes to increase the collector current by enhancing the transfer ratio.

Original language	Undefined
DOIs	https://doi.org/10.1109/INTMAG.2002.1001529
Publication status	Published - 2002
Event	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - RAI Congress Center, Amsterdam, Netherlands Duration: 28 Apr 2002 → 2 May 2002

Conference

Conference	2002 IEEE International Magnetics Conference, INTERMAG Europe 2002
Abbreviated title	INTERMAG Europe 2002
Country/Territory	Netherlands
City	Amsterdam
Period	28/04/02 → 2/05/02

Keywords

IR-55893

Access to Document

10.1109/INTMAG.2002.1001529

01001529

Cite this

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title = "Three routes to increase the output current of the spin-valve transistor",

abstract = "Summary form only given. The spin-valve transistor (SVT) is a three terminal device in which hot electrons are emitted over a Schottky barrier, they cross a metallic spin valve and are collected with energyand momentum selection. While SVTs with high relative magnetic response (above 300% at room temperature) have been made, the absolute value of the output (collector) current (1c) is still low (I/sub C/ = 10nA at I/sub E/ = 2mA). Although this is sufficient to study spin-dependent hot-electron transport across magnetic layers, it is certainly a disadvantage for practical applications. We will present three routes to increase the collector current by enhancing the transfer ratio.",

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T1 - Three routes to increase the output current of the spin-valve transistor

AU - van 't Erve, O.M.J.

AU - Jansen, R.

AU - Postma, F.M.

AU - Lodder, J.C.

PY - 2002

Y1 - 2002

N2 - Summary form only given. The spin-valve transistor (SVT) is a three terminal device in which hot electrons are emitted over a Schottky barrier, they cross a metallic spin valve and are collected with energyand momentum selection. While SVTs with high relative magnetic response (above 300% at room temperature) have been made, the absolute value of the output (collector) current (1c) is still low (I/sub C/ = 10nA at I/sub E/ = 2mA). Although this is sufficient to study spin-dependent hot-electron transport across magnetic layers, it is certainly a disadvantage for practical applications. We will present three routes to increase the collector current by enhancing the transfer ratio.

AB - Summary form only given. The spin-valve transistor (SVT) is a three terminal device in which hot electrons are emitted over a Schottky barrier, they cross a metallic spin valve and are collected with energyand momentum selection. While SVTs with high relative magnetic response (above 300% at room temperature) have been made, the absolute value of the output (collector) current (1c) is still low (I/sub C/ = 10nA at I/sub E/ = 2mA). Although this is sufficient to study spin-dependent hot-electron transport across magnetic layers, it is certainly a disadvantage for practical applications. We will present three routes to increase the collector current by enhancing the transfer ratio.

KW - IR-55893

U2 - 10.1109/INTMAG.2002.1001529

DO - 10.1109/INTMAG.2002.1001529

M3 - Paper

Y2 - 28 April 2002 through 2 May 2002

ER -