Abstract
Summary form only given.
The spin-valve transistor (SVT) is a three terminal device in which hot electrons are emitted over a Schottky barrier, they cross a metallic spin valve and are collected with energyand momentum selection. While SVTs with high relative magnetic response (above 300% at room temperature) have been made, the absolute value of the output (collector) current (1c) is still low (I/sub C/ = 10nA at I/sub E/ = 2mA). Although this is sufficient to study spin-dependent hot-electron transport across magnetic layers, it is certainly a disadvantage for practical applications. We will present three routes to increase the collector current by enhancing the transfer ratio.
Original language | Undefined |
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DOIs | |
Publication status | Published - 2002 |
Event | 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - RAI Congress Center, Amsterdam, Netherlands Duration: 28 Apr 2002 → 2 May 2002 |
Conference
Conference | 2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 |
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Abbreviated title | INTERMAG Europe 2002 |
Country/Territory | Netherlands |
City | Amsterdam |
Period | 28/04/02 → 2/05/02 |
Keywords
- IR-55893