Summary form only given. The spin-valve transistor (SVT) is a three terminal device in which hot electrons are emitted over a Schottky barrier, they cross a metallic spin valve and are collected with energyand momentum selection. While SVTs with high relative magnetic response (above 300% at room temperature) have been made, the absolute value of the output (collector) current (1c) is still low (I/sub C/ = 10nA at I/sub E/ = 2mA). Although this is sufficient to study spin-dependent hot-electron transport across magnetic layers, it is certainly a disadvantage for practical applications. We will present three routes to increase the collector current by enhancing the transfer ratio.
|Publication status||Published - 2002|
|Event||2002 IEEE International Magnetics Conference, INTERMAG Europe 2002 - RAI Congress Center, Amsterdam, Netherlands|
Duration: 28 Apr 2002 → 2 May 2002
|Conference||2002 IEEE International Magnetics Conference, INTERMAG Europe 2002|
|Abbreviated title||INTERMAG Europe 2002|
|Period||28/04/02 → 2/05/02|