TY - JOUR
T1 - Threshold voltage variations in N-channel mos transistors and MOSFET-based sensors due to optical radiation
AU - Wlodarski, W.
AU - Bergveld, Piet
AU - Voorthuyzen, J.A.
PY - 1986
Y1 - 1986
N2 - The influence of optical radiation on the MOSFET threshold voltage has been investigated theoretically as well as experimentally. For conventional MOSFETs the influence is negligible, but for open-gate FET-based sensors, such as the ISFET, optical radiation can cause a considerable threshold voltage shift. An explanation of the threshold voltage shift due to illumination is given, based on the analysis of quasi-equilibrium effects in an illuminated semiconductor surface layer. The relation between the threshold voltage and the optical radiation intensity has been derived. Experimental result are given.
AB - The influence of optical radiation on the MOSFET threshold voltage has been investigated theoretically as well as experimentally. For conventional MOSFETs the influence is negligible, but for open-gate FET-based sensors, such as the ISFET, optical radiation can cause a considerable threshold voltage shift. An explanation of the threshold voltage shift due to illumination is given, based on the analysis of quasi-equilibrium effects in an illuminated semiconductor surface layer. The relation between the threshold voltage and the optical radiation intensity has been derived. Experimental result are given.
U2 - 10.1016/0250-6874(86)80063-4
DO - 10.1016/0250-6874(86)80063-4
M3 - Article
VL - 9
SP - 313
EP - 321
JO - Sensors and actuators
JF - Sensors and actuators
SN - 0250-6874
IS - 4
ER -