Threshold voltage variations in N-channel mos transistors and MOSFET-based sensors due to optical radiation

W. Wlodarski, Piet Bergveld, J.A. Voorthuyzen

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    Abstract

    The influence of optical radiation on the MOSFET threshold voltage has been investigated theoretically as well as experimentally. For conventional MOSFETs the influence is negligible, but for open-gate FET-based sensors, such as the ISFET, optical radiation can cause a considerable threshold voltage shift. An explanation of the threshold voltage shift due to illumination is given, based on the analysis of quasi-equilibrium effects in an illuminated semiconductor surface layer. The relation between the threshold voltage and the optical radiation intensity has been derived. Experimental result are given.
    Original languageEnglish
    Pages (from-to)313-321
    JournalSensors and actuators
    Volume9
    Issue number4
    DOIs
    Publication statusPublished - 1986

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