Threshold voltage variations in N-channel mos transistors and MOSFET-based sensors due to optical radiation

W. Wlodarski; Piet Bergveld; J.A. Voorthuyzen

doi:10.1016/0250-6874(86)80063-4

Threshold voltage variations in N-channel mos transistors and MOSFET-based sensors due to optical radiation

W. Wlodarski
, Piet Bergveld
, J.A. Voorthuyzen

Research output: Contribution to journal › Article › Academic

15 Citations (Scopus)

503 Downloads (Pure)

Abstract

The influence of optical radiation on the MOSFET threshold voltage has been investigated theoretically as well as experimentally. For conventional MOSFETs the influence is negligible, but for open-gate FET-based sensors, such as the ISFET, optical radiation can cause a considerable threshold voltage shift. An explanation of the threshold voltage shift due to illumination is given, based on the analysis of quasi-equilibrium effects in an illuminated semiconductor surface layer. The relation between the threshold voltage and the optical radiation intensity has been derived. Experimental result are given.

Original language	English
Pages (from-to)	313-321
Journal	Sensors and actuators
Volume	9
Issue number	4
DOIs	https://doi.org/10.1016/0250-6874(86)80063-4
Publication status	Published - 1986

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title = "Threshold voltage variations in N-channel mos transistors and MOSFET-based sensors due to optical radiation",

abstract = "The influence of optical radiation on the MOSFET threshold voltage has been investigated theoretically as well as experimentally. For conventional MOSFETs the influence is negligible, but for open-gate FET-based sensors, such as the ISFET, optical radiation can cause a considerable threshold voltage shift. An explanation of the threshold voltage shift due to illumination is given, based on the analysis of quasi-equilibrium effects in an illuminated semiconductor surface layer. The relation between the threshold voltage and the optical radiation intensity has been derived. Experimental result are given.",

author = "W. Wlodarski and Piet Bergveld and J.A. Voorthuyzen",

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T1 - Threshold voltage variations in N-channel mos transistors and MOSFET-based sensors due to optical radiation

AU - Wlodarski, W.

AU - Bergveld, Piet

AU - Voorthuyzen, J.A.

PY - 1986

Y1 - 1986

N2 - The influence of optical radiation on the MOSFET threshold voltage has been investigated theoretically as well as experimentally. For conventional MOSFETs the influence is negligible, but for open-gate FET-based sensors, such as the ISFET, optical radiation can cause a considerable threshold voltage shift. An explanation of the threshold voltage shift due to illumination is given, based on the analysis of quasi-equilibrium effects in an illuminated semiconductor surface layer. The relation between the threshold voltage and the optical radiation intensity has been derived. Experimental result are given.

AB - The influence of optical radiation on the MOSFET threshold voltage has been investigated theoretically as well as experimentally. For conventional MOSFETs the influence is negligible, but for open-gate FET-based sensors, such as the ISFET, optical radiation can cause a considerable threshold voltage shift. An explanation of the threshold voltage shift due to illumination is given, based on the analysis of quasi-equilibrium effects in an illuminated semiconductor surface layer. The relation between the threshold voltage and the optical radiation intensity has been derived. Experimental result are given.

U2 - 10.1016/0250-6874(86)80063-4

DO - 10.1016/0250-6874(86)80063-4

M3 - Article

SN - 0250-6874

VL - 9

SP - 313

EP - 321

JO - Sensors and actuators

JF - Sensors and actuators

IS - 4

ER -

Threshold voltage variations in N-channel mos transistors and MOSFET-based sensors due to optical radiation

Abstract

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