Ti-sapphire buried channel waveguide laser by proton implantation

L. Laversenne; C.N. Borca; Markus Pollnau; P. Moretti; C. Grivas; D.P. Shepherd; R.W. Eason

Ti-sapphire buried channel waveguide laser by proton implantation

L. Laversenne, C.N. Borca, Markus Pollnau, P. Moretti, C. Grivas, D.P. Shepherd, R.W. Eason

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Laser emission near 780 nm with 2 mW output power and 3.3% slope efficiency from a Ti:sapphire buried channel waveguide is demonstrated. The sample was fabricated by proton implantation.

Original language	Undefined
Title of host publication	Technical Digest of the Conference on Lasers and Electro-Optics
Place of Publication	Washington DC, U.S.A.
Publisher	Optical Society of America
Pages	JWB47
ISBN (Print)	1-55752-813-6
Publication status	Published - 21 May 2006
Event	Technical Digest of the Conference on Lasers and Electro-Optics, Long Beach, California: Technical Digest of the Conference on Lasers and Electro-Optics - Washington DC, U.S.A. Duration: 21 May 2006 → …

Publication series

Name
Publisher	Optical Society of America
Number	Paper TUA6

Conference

Conference	Technical Digest of the Conference on Lasers and Electro-Optics, Long Beach, California
City	Washington DC, U.S.A.
Period	21/05/06 → …

Keywords

EWI-12319
IR-62259
METIS-248243
IOMS-APD: Active Photonic Devices

Access to Document

http://eprints.eemcs.utwente.nl/secure2/12319/01/Laversenne_L-Borca-Pollnau-CLEO-Long_Beach_California_USA_21-26_May_06.pdf

Cite this

Laversenne, L., Borca, C. N., Pollnau, M., Moretti, P., Grivas, C., Shepherd, D. P., & Eason, R. W. (2006). Ti-sapphire buried channel waveguide laser by proton implantation. In Technical Digest of the Conference on Lasers and Electro-Optics (pp. JWB47). Optical Society of America. http://eprints.eemcs.utwente.nl/secure2/12319/01/Laversenne_L-Borca-Pollnau-CLEO-Long_Beach_California_USA_21-26_May_06.pdf

@inproceedings{dfb31f3e3b7d4f889a0bf050195c0794,

title = "Ti-sapphire buried channel waveguide laser by proton implantation",

abstract = "Laser emission near 780 nm with 2 mW output power and 3.3% slope efficiency from a Ti:sapphire buried channel waveguide is demonstrated. The sample was fabricated by proton implantation.",

keywords = "EWI-12319, IR-62259, METIS-248243, IOMS-APD: Active Photonic Devices",

author = "L. Laversenne and C.N. Borca and Markus Pollnau and P. Moretti and C. Grivas and D.P. Shepherd and R.W. Eason",

year = "2006",

month = may,

day = "21",

language = "Undefined",

isbn = "1-55752-813-6",

publisher = "Optical Society of America",

number = "Paper TUA6",

pages = "JWB47",

booktitle = "Technical Digest of the Conference on Lasers and Electro-Optics",

note = "Technical Digest of the Conference on Lasers and Electro-Optics, Long Beach, California ; Conference date: 21-05-2006",

}

Laversenne, L, Borca, CN, Pollnau, M, Moretti, P, Grivas, C, Shepherd, DP & Eason, RW 2006, Ti-sapphire buried channel waveguide laser by proton implantation. in Technical Digest of the Conference on Lasers and Electro-Optics. Optical Society of America, Washington DC, U.S.A., pp. JWB47, Technical Digest of the Conference on Lasers and Electro-Optics, Long Beach, California, Washington DC, U.S.A., 21/05/06. <http://eprints.eemcs.utwente.nl/secure2/12319/01/Laversenne_L-Borca-Pollnau-CLEO-Long_Beach_California_USA_21-26_May_06.pdf>

Ti-sapphire buried channel waveguide laser by proton implantation. / Laversenne, L.; Borca, C.N.; Pollnau, Markus et al.
Technical Digest of the Conference on Lasers and Electro-Optics. Washington DC, U.S.A.: Optical Society of America, 2006. p. JWB47.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Ti-sapphire buried channel waveguide laser by proton implantation

AU - Laversenne, L.

AU - Borca, C.N.

AU - Pollnau, Markus

AU - Moretti, P.

AU - Grivas, C.

AU - Shepherd, D.P.

AU - Eason, R.W.

PY - 2006/5/21

Y1 - 2006/5/21

N2 - Laser emission near 780 nm with 2 mW output power and 3.3% slope efficiency from a Ti:sapphire buried channel waveguide is demonstrated. The sample was fabricated by proton implantation.

AB - Laser emission near 780 nm with 2 mW output power and 3.3% slope efficiency from a Ti:sapphire buried channel waveguide is demonstrated. The sample was fabricated by proton implantation.

KW - EWI-12319

KW - IR-62259

KW - METIS-248243

KW - IOMS-APD: Active Photonic Devices

M3 - Conference contribution

SN - 1-55752-813-6

SP - JWB47

BT - Technical Digest of the Conference on Lasers and Electro-Optics

PB - Optical Society of America

CY - Washington DC, U.S.A.

T2 - Technical Digest of the Conference on Lasers and Electro-Optics, Long Beach, California

Y2 - 21 May 2006

ER -