Ti-sapphire buried channel waveguide laser by proton implantation

L. Laversenne, C.N. Borca, Markus Pollnau, P. Moretti, C. Grivas, D.P. Shepherd, R.W. Eason

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    Laser emission near 780 nm with 2 mW output power and 3.3% slope efficiency from a Ti:sapphire buried channel waveguide is demonstrated. The sample was fabricated by proton implantation.
    Original languageUndefined
    Title of host publicationTechnical Digest of the Conference on Lasers and Electro-Optics
    Place of PublicationWashington DC, U.S.A.
    PublisherOptical Society of America
    PagesJWB47
    ISBN (Print)1-55752-813-6
    Publication statusPublished - 21 May 2006

    Publication series

    Name
    PublisherOptical Society of America
    NumberPaper TUA6

    Keywords

    • EWI-12319
    • IR-62259
    • METIS-248243
    • IOMS-APD: Active Photonic Devices

    Cite this

    Laversenne, L., Borca, C. N., Pollnau, M., Moretti, P., Grivas, C., Shepherd, D. P., & Eason, R. W. (2006). Ti-sapphire buried channel waveguide laser by proton implantation. In Technical Digest of the Conference on Lasers and Electro-Optics (pp. JWB47). Washington DC, U.S.A.: Optical Society of America.