Time and voltage dependence of dielectric charging in RF MEMS capacitive switches

R.W. Herfst, P.G. Steeneken, J. Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    43 Citations (Scopus)
    5 Downloads (Pure)

    Abstract

    A major issue in the reliability of RF MEMS capacitive switches is charge injection in the dielectric. In this study we try to establish the time and voltage dependence of dielectric charging in RF MEMS with silicon nitride as a dielectric. It is shown that the voltage shift of the CV-curve due to injected charge shows a √t dependence over a large time range. By doing measurements on a large number of devices (early development material made at NXP Semiconductors in Nijmegen) we further show that the charging rate increases exponentially with the applied stress voltage.
    Original languageEnglish
    Title of host publication2007 IEEE International Reliability Physics Symposium proceedings
    Subtitle of host publication45th Annual : Phoenix, Arizona • April 15–19, 2007
    Place of PublicationLos Alamitos, CA
    PublisherIEEE Computer Society
    Pages417-421
    Number of pages5
    ISBN (Print)1-42440919-5, 9781424409181
    DOIs
    Publication statusPublished - 15 Apr 2007
    Event45th Annual IEEE International Reliability Physics Symposium, IRPS 2007 - Phoenix, United States
    Duration: 15 Apr 200719 Apr 2007
    Conference number: 45

    Conference

    Conference45th Annual IEEE International Reliability Physics Symposium, IRPS 2007
    Abbreviated titleIRPS
    CountryUnited States
    CityPhoenix
    Period15/04/0719/04/07

    Keywords

    • EWI-9733
    • IR-67084
    • METIS-241609

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