Time scales of transient enhanced diffusion: Free and clustered interstitials

N.E.B. Cowern (Corresponding Author), H.G.A. Huizing, P.A. Stolk, C.C.G. Visser, R.C.M. de Kruif, K. Kyllesbech Larsen, V. Privitera, L.K. Nanver, W. Crans

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Abstract

Transient enhanced diffusion (TED) and electrical activation after nonamorphizing Si implantations into lightly B-doped Si multilayers shows two distinct timescales, each related to a different class of interstitial defect. At 700°C, ultrafast TED occurs within the first 15 s with a B diffusivity enhancement of > 2 × 105. Immobile clustered B is present at low concentration levels after the ultrafast transient and persists for an extended period (∼ 102-103 s). The later phase of TED exhibits a near-constant diffusivity enhancement of ≈1 × 104, consistent with interstitial injection controlled by dissolving {113} interstitial clusters. The relative contributions of the ultrafast and regular TED regimes to the final diffusive broadening of the B profile depends on the proportion of interstitials that escape capture by {113} clusters growing within the implant damage region upon annealing. Our results explain the ultrafast TED recently observed after medium-dose B implantation. In that case there are enough B atoms to trap a large proportion of interstitials in Si-B clusters, and the remaining interstitials contribute to TED without passing through an intermediate {113} defect stage. The data on the ultrafast TED pulse allows us to extract lower limits for the diffusivities of the Si interstitial (DI > 2 × 10-10 cm2s-1) and the B interstitial(cy) defect (DBi > 2 × 10-13 cm2s-1) at 700°C.

Original languageEnglish
Pages (from-to)14-18
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume120
Issue number1-4
DOIs
Publication statusPublished - Dec 1996
Externally publishedYes

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