Tin dioxide sol-gel derived thin films deposited on porous silicon

C. Cobianu, Cristian Savaniu, Octavian Buiu, Maria Zaharescu, Constanta Parlog, Albert van den Berg, Bela Pecz, Dan Dascula

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    Abstract

    Undoped and Sb-doped SnO2 sol–gel derived thin films have been prepared for the first time from tin (IV) ethoxide precursor and SbCl3 in order to be utilised for gas sensing applications where porous silicon is used as a substrate. Transparent, crack-free and adherent layers were obtained on different types of substrates (Si, SiO2/Si). The evolution of the Sn–O chemical bonds in the SnO2 during film consolidation treatments was monitored by infrared spectroscopy. By energy dispersive X-ray spectroscopy performed on the cross section of the porosified silicon coupled with transmission electron microscopy, the penetration of the SnO2 sol–gel derived films in the nanometric pores of the porous silicon has been experimentally proved.
    Original languageEnglish
    Pages (from-to)114-120
    JournalSensors and actuators. B: Chemical
    Volume1997
    Issue number43
    DOIs
    Publication statusPublished - 1996

    Keywords

    • METIS-111675
    • IR-14566
    • Sol–gel
    • Tin dioxide
    • Porous Silicon

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