TiN films by Atomic Layer Deposition: Growth and electrical characterization down to sub-nm thickness

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Abstract

    This study reports on the growth and characterization of TiN thib films obtained by atomic layer deposition at 350-425 ◦C. We observe a growth of the continuous layers from the very beginning of the process, i.e. for a thickness of 0.65 nm, which is equivalent to 3 monolayers of TiN. The film growth stabilizes in a self-limiting surface-reaction mode represented by a constant growth rate of 0.02 nm/cycle. We further report on the resistivity of ultra-thin TiN films and its evolution with film thickness. The resistivity is determined by both optical spectroscopic ellipsometry and electrical techniques. The latter includes circular transfer length method and linear test structures. The resistivity increased significantly with decreasing film thickness below 4 nm, as well as the discrepancy between the optical and electrical method. This is attributed to the scattering effects of conduction electrons. Native oxidation of a few nm thick TiN films leads to non-linear I–V characteristics.
    Original languageEnglish
    Title of host publicationAnvanced Materials and Nanotechnology
    Subtitle of host publicationInternational Conference Proceedings, 13-14th December 2012, Hanoi - Vietnam
    EditorsVan Bui Hoa
    Place of PublicationHanoi, Vietnam
    PublisherHanoi University of Science and Technology
    Pages7-12
    Number of pages6
    ISBN (Print)978-604-911-247-8
    Publication statusPublished - 14 Dec 2012
    EventInternational Conference on Advanced Materials and Nanotechnology, ICAMN 2012 - Hanoi, Viet Nam
    Duration: 13 Dec 201214 Dec 2012
    http://itims.edu.vn/conf/ICAMN2012/index.html

    Conference

    ConferenceInternational Conference on Advanced Materials and Nanotechnology, ICAMN 2012
    Abbreviated titleICAMN
    CountryViet Nam
    CityHanoi
    Period13/12/1214/12/12
    Internet address

    Fingerprint

    atomic layer epitaxy
    electrical resistivity
    film thickness
    conduction electrons
    surface reactions
    ellipsometry
    thick films
    optics
    oxidation
    cycles
    thin films
    scattering

    Keywords

    • EWI-23081
    • Resistivity
    • Thin Films
    • METIS-296304
    • IR-84169
    • Atomic Layer Deposition
    • Titanium Nitride

    Cite this

    Bui, H. V., Wolters, R. A. M., & Kovalgin, A. Y. (2012). TiN films by Atomic Layer Deposition: Growth and electrical characterization down to sub-nm thickness. In V. B. Hoa (Ed.), Anvanced Materials and Nanotechnology: International Conference Proceedings, 13-14th December 2012, Hanoi - Vietnam (pp. 7-12). Hanoi, Vietnam: Hanoi University of Science and Technology.
    Bui, Hao Van ; Wolters, Rob A.M. ; Kovalgin, Alexeij Y. / TiN films by Atomic Layer Deposition : Growth and electrical characterization down to sub-nm thickness. Anvanced Materials and Nanotechnology: International Conference Proceedings, 13-14th December 2012, Hanoi - Vietnam. editor / Van Bui Hoa. Hanoi, Vietnam : Hanoi University of Science and Technology, 2012. pp. 7-12
    @inproceedings{eddda04c945343dbac52c1d092c0df5d,
    title = "TiN films by Atomic Layer Deposition: Growth and electrical characterization down to sub-nm thickness",
    abstract = "This study reports on the growth and characterization of TiN thib films obtained by atomic layer deposition at 350-425 ◦C. We observe a growth of the continuous layers from the very beginning of the process, i.e. for a thickness of 0.65 nm, which is equivalent to 3 monolayers of TiN. The film growth stabilizes in a self-limiting surface-reaction mode represented by a constant growth rate of 0.02 nm/cycle. We further report on the resistivity of ultra-thin TiN films and its evolution with film thickness. The resistivity is determined by both optical spectroscopic ellipsometry and electrical techniques. The latter includes circular transfer length method and linear test structures. The resistivity increased significantly with decreasing film thickness below 4 nm, as well as the discrepancy between the optical and electrical method. This is attributed to the scattering effects of conduction electrons. Native oxidation of a few nm thick TiN films leads to non-linear I–V characteristics.",
    keywords = "EWI-23081, Resistivity, Thin Films, METIS-296304, IR-84169, Atomic Layer Deposition, Titanium Nitride",
    author = "Bui, {Hao Van} and Wolters, {Rob A.M.} and Kovalgin, {Alexeij Y.}",
    year = "2012",
    month = "12",
    day = "14",
    language = "English",
    isbn = "978-604-911-247-8",
    pages = "7--12",
    editor = "Hoa, {Van Bui}",
    booktitle = "Anvanced Materials and Nanotechnology",
    publisher = "Hanoi University of Science and Technology",

    }

    Bui, HV, Wolters, RAM & Kovalgin, AY 2012, TiN films by Atomic Layer Deposition: Growth and electrical characterization down to sub-nm thickness. in VB Hoa (ed.), Anvanced Materials and Nanotechnology: International Conference Proceedings, 13-14th December 2012, Hanoi - Vietnam. Hanoi University of Science and Technology, Hanoi, Vietnam, pp. 7-12, International Conference on Advanced Materials and Nanotechnology, ICAMN 2012, Hanoi, Viet Nam, 13/12/12.

    TiN films by Atomic Layer Deposition : Growth and electrical characterization down to sub-nm thickness. / Bui, Hao Van; Wolters, Rob A.M.; Kovalgin, Alexeij Y.

    Anvanced Materials and Nanotechnology: International Conference Proceedings, 13-14th December 2012, Hanoi - Vietnam. ed. / Van Bui Hoa. Hanoi, Vietnam : Hanoi University of Science and Technology, 2012. p. 7-12.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    TY - GEN

    T1 - TiN films by Atomic Layer Deposition

    T2 - Growth and electrical characterization down to sub-nm thickness

    AU - Bui, Hao Van

    AU - Wolters, Rob A.M.

    AU - Kovalgin, Alexeij Y.

    PY - 2012/12/14

    Y1 - 2012/12/14

    N2 - This study reports on the growth and characterization of TiN thib films obtained by atomic layer deposition at 350-425 ◦C. We observe a growth of the continuous layers from the very beginning of the process, i.e. for a thickness of 0.65 nm, which is equivalent to 3 monolayers of TiN. The film growth stabilizes in a self-limiting surface-reaction mode represented by a constant growth rate of 0.02 nm/cycle. We further report on the resistivity of ultra-thin TiN films and its evolution with film thickness. The resistivity is determined by both optical spectroscopic ellipsometry and electrical techniques. The latter includes circular transfer length method and linear test structures. The resistivity increased significantly with decreasing film thickness below 4 nm, as well as the discrepancy between the optical and electrical method. This is attributed to the scattering effects of conduction electrons. Native oxidation of a few nm thick TiN films leads to non-linear I–V characteristics.

    AB - This study reports on the growth and characterization of TiN thib films obtained by atomic layer deposition at 350-425 ◦C. We observe a growth of the continuous layers from the very beginning of the process, i.e. for a thickness of 0.65 nm, which is equivalent to 3 monolayers of TiN. The film growth stabilizes in a self-limiting surface-reaction mode represented by a constant growth rate of 0.02 nm/cycle. We further report on the resistivity of ultra-thin TiN films and its evolution with film thickness. The resistivity is determined by both optical spectroscopic ellipsometry and electrical techniques. The latter includes circular transfer length method and linear test structures. The resistivity increased significantly with decreasing film thickness below 4 nm, as well as the discrepancy between the optical and electrical method. This is attributed to the scattering effects of conduction electrons. Native oxidation of a few nm thick TiN films leads to non-linear I–V characteristics.

    KW - EWI-23081

    KW - Resistivity

    KW - Thin Films

    KW - METIS-296304

    KW - IR-84169

    KW - Atomic Layer Deposition

    KW - Titanium Nitride

    M3 - Conference contribution

    SN - 978-604-911-247-8

    SP - 7

    EP - 12

    BT - Anvanced Materials and Nanotechnology

    A2 - Hoa, Van Bui

    PB - Hanoi University of Science and Technology

    CY - Hanoi, Vietnam

    ER -

    Bui HV, Wolters RAM, Kovalgin AY. TiN films by Atomic Layer Deposition: Growth and electrical characterization down to sub-nm thickness. In Hoa VB, editor, Anvanced Materials and Nanotechnology: International Conference Proceedings, 13-14th December 2012, Hanoi - Vietnam. Hanoi, Vietnam: Hanoi University of Science and Technology. 2012. p. 7-12