TiN films by Atomic Layer Deposition: Growth and electrical characterization down to sub-nm thickness

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    Abstract

    This study reports on the growth and characterization of TiN thib films obtained by atomic layer deposition at 350-425 ◦C. We observe a growth of the continuous layers from the very beginning of the process, i.e. for a thickness of 0.65 nm, which is equivalent to 3 monolayers of TiN. The film growth stabilizes in a self-limiting surface-reaction mode represented by a constant growth rate of 0.02 nm/cycle. We further report on the resistivity of ultra-thin TiN films and its evolution with film thickness. The resistivity is determined by both optical spectroscopic ellipsometry and electrical techniques. The latter includes circular transfer length method and linear test structures. The resistivity increased significantly with decreasing film thickness below 4 nm, as well as the discrepancy between the optical and electrical method. This is attributed to the scattering effects of conduction electrons. Native oxidation of a few nm thick TiN films leads to non-linear I–V characteristics.
    Original languageEnglish
    Title of host publicationAnvanced Materials and Nanotechnology
    Subtitle of host publicationInternational Conference Proceedings, 13-14th December 2012, Hanoi - Vietnam
    EditorsVan Bui Hoa
    Place of PublicationHanoi, Vietnam
    PublisherHanoi University of Science and Technology
    Pages7-12
    Number of pages6
    ISBN (Print)978-604-911-247-8
    Publication statusPublished - 14 Dec 2012
    EventInternational Conference on Advanced Materials and Nanotechnology, ICAMN 2012 - Hanoi, Viet Nam
    Duration: 13 Dec 201214 Dec 2012
    http://itims.edu.vn/conf/ICAMN2012/index.html

    Conference

    ConferenceInternational Conference on Advanced Materials and Nanotechnology, ICAMN 2012
    Abbreviated titleICAMN
    CountryViet Nam
    CityHanoi
    Period13/12/1214/12/12
    Internet address

    Keywords

    • EWI-23081
    • Resistivity
    • Thin Films
    • METIS-296304
    • IR-84169
    • Atomic Layer Deposition
    • Titanium Nitride

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  • Cite this

    Bui, H. V., Wolters, R. A. M., & Kovalgin, A. Y. (2012). TiN films by Atomic Layer Deposition: Growth and electrical characterization down to sub-nm thickness. In V. B. Hoa (Ed.), Anvanced Materials and Nanotechnology: International Conference Proceedings, 13-14th December 2012, Hanoi - Vietnam (pp. 7-12). Hanoi, Vietnam: Hanoi University of Science and Technology.