Top-down fabrication of Sub-30 nm Monocrystalline Silicon nanowires using conventional microfabrication

Research output: Contribution to journalArticleAcademicpeer-review

65 Citations (Scopus)

Abstract

We report a new low-cost top-down silicon nanowire fabrication technology requiring only conventional microfabrication processes including microlithography, oxidation, and wet anisotropic plane-dependent etching; high quality silicon nanowire arrays can be easily made in any conventional microfabrication facility without nanolithography or expensive equipment. Silicon nanowires with scalable lateral dimensions ranging from 200 nm down to 10-20 nm and lengths up to similar to 100 mu m can be precisely formed with near-perfect monocrystalline cross sections, atomically smooth surfaces, and wafer-scale yields greater than 90% using a novel size reduction method where silicon nanowires can be controllably scaled to any dimension and doping concentration independent of large contacting regions from a continuous layer of crystalline silicon.
Original languageUndefined
Article number10.1021/nn901220g
Pages (from-to)3485-3492
Number of pages8
JournalACS nano
Volume3
Issue number11
DOIs
Publication statusPublished - Nov 2009

Keywords

  • EWI-16953
  • METIS-264213
  • IR-68876

Cite this

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title = "Top-down fabrication of Sub-30 nm Monocrystalline Silicon nanowires using conventional microfabrication",
abstract = "We report a new low-cost top-down silicon nanowire fabrication technology requiring only conventional microfabrication processes including microlithography, oxidation, and wet anisotropic plane-dependent etching; high quality silicon nanowire arrays can be easily made in any conventional microfabrication facility without nanolithography or expensive equipment. Silicon nanowires with scalable lateral dimensions ranging from 200 nm down to 10-20 nm and lengths up to similar to 100 mu m can be precisely formed with near-perfect monocrystalline cross sections, atomically smooth surfaces, and wafer-scale yields greater than 90{\%} using a novel size reduction method where silicon nanowires can be controllably scaled to any dimension and doping concentration independent of large contacting regions from a continuous layer of crystalline silicon.",
keywords = "EWI-16953, METIS-264213, IR-68876",
author = "S. Chen and Bomer, {Johan G.} and {van der Wiel}, {Wilfred Gerard} and Edwin Carlen and {van den Berg}, Albert",
note = "10.1021/nn901220g",
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month = "11",
doi = "10.1021/nn901220g",
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pages = "3485--3492",
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issn = "1936-0851",
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Top-down fabrication of Sub-30 nm Monocrystalline Silicon nanowires using conventional microfabrication. / Chen, S.; Bomer, Johan G.; van der Wiel, Wilfred Gerard; Carlen, Edwin; van den Berg, Albert.

In: ACS nano, Vol. 3, No. 11, 10.1021/nn901220g, 11.2009, p. 3485-3492.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Top-down fabrication of Sub-30 nm Monocrystalline Silicon nanowires using conventional microfabrication

AU - Chen, S.

AU - Bomer, Johan G.

AU - van der Wiel, Wilfred Gerard

AU - Carlen, Edwin

AU - van den Berg, Albert

N1 - 10.1021/nn901220g

PY - 2009/11

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AB - We report a new low-cost top-down silicon nanowire fabrication technology requiring only conventional microfabrication processes including microlithography, oxidation, and wet anisotropic plane-dependent etching; high quality silicon nanowire arrays can be easily made in any conventional microfabrication facility without nanolithography or expensive equipment. Silicon nanowires with scalable lateral dimensions ranging from 200 nm down to 10-20 nm and lengths up to similar to 100 mu m can be precisely formed with near-perfect monocrystalline cross sections, atomically smooth surfaces, and wafer-scale yields greater than 90% using a novel size reduction method where silicon nanowires can be controllably scaled to any dimension and doping concentration independent of large contacting regions from a continuous layer of crystalline silicon.

KW - EWI-16953

KW - METIS-264213

KW - IR-68876

U2 - 10.1021/nn901220g

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JO - ACS nano

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