Top-down fabrication of Sub-30 nm Monocrystalline Silicon nanowires using conventional microfabrication

    Research output: Contribution to journalArticleAcademicpeer-review

    67 Citations (Scopus)

    Abstract

    We report a new low-cost top-down silicon nanowire fabrication technology requiring only conventional microfabrication processes including microlithography, oxidation, and wet anisotropic plane-dependent etching; high quality silicon nanowire arrays can be easily made in any conventional microfabrication facility without nanolithography or expensive equipment. Silicon nanowires with scalable lateral dimensions ranging from 200 nm down to 10-20 nm and lengths up to similar to 100 mu m can be precisely formed with near-perfect monocrystalline cross sections, atomically smooth surfaces, and wafer-scale yields greater than 90% using a novel size reduction method where silicon nanowires can be controllably scaled to any dimension and doping concentration independent of large contacting regions from a continuous layer of crystalline silicon.
    Original languageUndefined
    Article number10.1021/nn901220g
    Pages (from-to)3485-3492
    Number of pages8
    JournalACS nano
    Volume3
    Issue number11
    DOIs
    Publication statusPublished - Nov 2009

    Keywords

    • EWI-16953
    • METIS-264213
    • IR-68876

    Cite this

    @article{09ac172ed10040f89ae0a153096716d7,
    title = "Top-down fabrication of Sub-30 nm Monocrystalline Silicon nanowires using conventional microfabrication",
    abstract = "We report a new low-cost top-down silicon nanowire fabrication technology requiring only conventional microfabrication processes including microlithography, oxidation, and wet anisotropic plane-dependent etching; high quality silicon nanowire arrays can be easily made in any conventional microfabrication facility without nanolithography or expensive equipment. Silicon nanowires with scalable lateral dimensions ranging from 200 nm down to 10-20 nm and lengths up to similar to 100 mu m can be precisely formed with near-perfect monocrystalline cross sections, atomically smooth surfaces, and wafer-scale yields greater than 90{\%} using a novel size reduction method where silicon nanowires can be controllably scaled to any dimension and doping concentration independent of large contacting regions from a continuous layer of crystalline silicon.",
    keywords = "EWI-16953, METIS-264213, IR-68876",
    author = "S. Chen and Bomer, {Johan G.} and {van der Wiel}, {Wilfred Gerard} and Edwin Carlen and {van den Berg}, Albert",
    note = "10.1021/nn901220g",
    year = "2009",
    month = "11",
    doi = "10.1021/nn901220g",
    language = "Undefined",
    volume = "3",
    pages = "3485--3492",
    journal = "ACS nano",
    issn = "1936-0851",
    publisher = "American Chemical Society",
    number = "11",

    }

    Top-down fabrication of Sub-30 nm Monocrystalline Silicon nanowires using conventional microfabrication. / Chen, S.; Bomer, Johan G.; van der Wiel, Wilfred Gerard; Carlen, Edwin; van den Berg, Albert.

    In: ACS nano, Vol. 3, No. 11, 10.1021/nn901220g, 11.2009, p. 3485-3492.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Top-down fabrication of Sub-30 nm Monocrystalline Silicon nanowires using conventional microfabrication

    AU - Chen, S.

    AU - Bomer, Johan G.

    AU - van der Wiel, Wilfred Gerard

    AU - Carlen, Edwin

    AU - van den Berg, Albert

    N1 - 10.1021/nn901220g

    PY - 2009/11

    Y1 - 2009/11

    N2 - We report a new low-cost top-down silicon nanowire fabrication technology requiring only conventional microfabrication processes including microlithography, oxidation, and wet anisotropic plane-dependent etching; high quality silicon nanowire arrays can be easily made in any conventional microfabrication facility without nanolithography or expensive equipment. Silicon nanowires with scalable lateral dimensions ranging from 200 nm down to 10-20 nm and lengths up to similar to 100 mu m can be precisely formed with near-perfect monocrystalline cross sections, atomically smooth surfaces, and wafer-scale yields greater than 90% using a novel size reduction method where silicon nanowires can be controllably scaled to any dimension and doping concentration independent of large contacting regions from a continuous layer of crystalline silicon.

    AB - We report a new low-cost top-down silicon nanowire fabrication technology requiring only conventional microfabrication processes including microlithography, oxidation, and wet anisotropic plane-dependent etching; high quality silicon nanowire arrays can be easily made in any conventional microfabrication facility without nanolithography or expensive equipment. Silicon nanowires with scalable lateral dimensions ranging from 200 nm down to 10-20 nm and lengths up to similar to 100 mu m can be precisely formed with near-perfect monocrystalline cross sections, atomically smooth surfaces, and wafer-scale yields greater than 90% using a novel size reduction method where silicon nanowires can be controllably scaled to any dimension and doping concentration independent of large contacting regions from a continuous layer of crystalline silicon.

    KW - EWI-16953

    KW - METIS-264213

    KW - IR-68876

    U2 - 10.1021/nn901220g

    DO - 10.1021/nn901220g

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    EP - 3492

    JO - ACS nano

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