Towards a numerical model of picosecond laser-material interaction in bulk sapphire

L. Capuano (Corresponding Author), D. de Zeeuw, G.R.B.E. Römer

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Crystalline sapphire (Al2O3) is a hard and transparent material widely used in industry. When applying IR laser wavelengths, sapphire can be laser-processed inside the bulk (sub-surface) to produce 3D structures, which can find uses, for example, in the production of microfluidic devices. Ul-trashort and tightly focused laser pulses trigger several energy absorption mechanisms inside the bulk. The absorbed energy locally modifies the structure of sapphire. Existing (numerical) models of sap-phire laser processing describe mainly femtosecond pulsed laser-material interaction (most of them only addressing surface processing) and, in addition, these models do not simulate the laser-induced temperatures of the lattice. Therefore, this study is aimed at a 2D-axisymmetric, time dependent, numerical model of the physics in picosecond laser-material interaction with sapphire. The physical phenomena in model include, but are not limited to: multiphoton absorption, tunneling ionization, avalanche ionization, recombination of carriers, diffusion of carriers and heat diffusion. Based on these phenomena, three quantities are calculated, namely: electron density, electron temperature and lattice temperature. The model was implemented in COMSOL Multiphysics®. It was found that, sapphire is modified by the laser radiation only if avalanche ionisation is triggered in the bulk.

Original languageEnglish
Pages (from-to)166-177
Number of pages12
JournalJournal of laser micro nanoengineering
Volume13
Issue number3
DOIs
Publication statusPublished - 1 Dec 2018

Fingerprint

laser materials
Sapphire
Numerical models
sapphire
Lasers
Ionization
ionization
avalanches
interactions
lasers
multiphoton absorption
transparence
microfluidic devices
Electron temperature
energy absorption
Energy absorption
Laser radiation
Processing
Pulsed lasers
Microfluidics

Keywords

  • Laser
  • Modeling
  • Processing
  • Sapphire
  • Sub-surface
  • Dielectrics

Cite this

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title = "Towards a numerical model of picosecond laser-material interaction in bulk sapphire",
abstract = "Crystalline sapphire (Al2O3) is a hard and transparent material widely used in industry. When applying IR laser wavelengths, sapphire can be laser-processed inside the bulk (sub-surface) to produce 3D structures, which can find uses, for example, in the production of microfluidic devices. Ul-trashort and tightly focused laser pulses trigger several energy absorption mechanisms inside the bulk. The absorbed energy locally modifies the structure of sapphire. Existing (numerical) models of sap-phire laser processing describe mainly femtosecond pulsed laser-material interaction (most of them only addressing surface processing) and, in addition, these models do not simulate the laser-induced temperatures of the lattice. Therefore, this study is aimed at a 2D-axisymmetric, time dependent, numerical model of the physics in picosecond laser-material interaction with sapphire. The physical phenomena in model include, but are not limited to: multiphoton absorption, tunneling ionization, avalanche ionization, recombination of carriers, diffusion of carriers and heat diffusion. Based on these phenomena, three quantities are calculated, namely: electron density, electron temperature and lattice temperature. The model was implemented in COMSOL Multiphysics{\circledR}. It was found that, sapphire is modified by the laser radiation only if avalanche ionisation is triggered in the bulk.",
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Towards a numerical model of picosecond laser-material interaction in bulk sapphire. / Capuano, L. (Corresponding Author); de Zeeuw, D.; Römer, G.R.B.E.

In: Journal of laser micro nanoengineering, Vol. 13, No. 3, 01.12.2018, p. 166-177.

Research output: Contribution to journalArticleAcademicpeer-review

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