Towards CMOS-compatible photon-counting imagers in the whole 10 nm - 1600 nm spectral range with PureB Si and PureGaB Ge-on-Si technology

L. K. Nanver, L. Qi, A. Sammak, K. R.C. Mok, M. Aminian, E. Charbon

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

The paper gives an overview of the implementation of PureB Si photodiodes in the spectral range 10 nm - 400 nm and PureGaB Ge-on-Si photodiodes in the near infrared (NIR) up to about 1.6 μm. Focus is put on the special properties of the technology in relationship to the integration in CMOS as single-photon avalanche diodes (SPADs).

Original languageEnglish
Title of host publicationProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
EditorsJia Zhou, Ting-Ao Tang
PublisherIEEE
ISBN (Electronic)9781479932962
DOIs
Publication statusPublished - 26 Jan 2014
Externally publishedYes
Event12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China
Duration: 28 Oct 201431 Oct 2014
Conference number: 12

Conference

Conference12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Abbreviated titleICSICT 2014
CountryChina
CityGuilin
Period28/10/1431/10/14

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Nanver, L. K., Qi, L., Sammak, A., Mok, K. R. C., Aminian, M., & Charbon, E. (2014). Towards CMOS-compatible photon-counting imagers in the whole 10 nm - 1600 nm spectral range with PureB Si and PureGaB Ge-on-Si technology. In J. Zhou, & T-A. Tang (Eds.), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 [7021268] IEEE. https://doi.org/10.1109/ICSICT.2014.7021268