Towards CMOS-compatible photon-counting imagers in the whole 10 nm - 1600 nm spectral range with PureB Si and PureGaB Ge-on-Si technology

L. K. Nanver; L. Qi; A. Sammak; K. R.C. Mok; M. Aminian; E. Charbon

doi:10.1109/ICSICT.2014.7021268

Towards CMOS-compatible photon-counting imagers in the whole 10 nm - 1600 nm spectral range with PureB Si and PureGaB Ge-on-Si technology

L. K. Nanver, L. Qi, A. Sammak, K. R.C. Mok, M. Aminian, E. Charbon

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

The paper gives an overview of the implementation of PureB Si photodiodes in the spectral range 10 nm - 400 nm and PureGaB Ge-on-Si photodiodes in the near infrared (NIR) up to about 1.6 μm. Focus is put on the special properties of the technology in relationship to the integration in CMOS as single-photon avalanche diodes (SPADs).

Original language	English
Title of host publication	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Editors	Jia Zhou, Ting-Ao Tang
Publisher	IEEE
ISBN (Electronic)	9781479932962
DOIs	https://doi.org/10.1109/ICSICT.2014.7021268
Publication status	Published - 26 Jan 2014
Externally published	Yes
Event	12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China Duration: 28 Oct 2014 → 31 Oct 2014 Conference number: 12

Conference

Conference	12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Abbreviated title	ICSICT 2014
Country/Territory	China
City	Guilin
Period	28/10/14 → 31/10/14

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10.1109/ICSICT.2014.7021268

Cite this

Nanver, L. K., Qi, L., Sammak, A., Mok, K. R. C., Aminian, M., & Charbon, E. (2014). Towards CMOS-compatible photon-counting imagers in the whole 10 nm - 1600 nm spectral range with PureB Si and PureGaB Ge-on-Si technology. In J. Zhou, & T-A. Tang (Eds.), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 [7021268] IEEE. https://doi.org/10.1109/ICSICT.2014.7021268

@inproceedings{aeef1c342fca4b6b938c9aaa385833c5,

title = "Towards CMOS-compatible photon-counting imagers in the whole 10 nm - 1600 nm spectral range with PureB Si and PureGaB Ge-on-Si technology",

abstract = "The paper gives an overview of the implementation of PureB Si photodiodes in the spectral range 10 nm - 400 nm and PureGaB Ge-on-Si photodiodes in the near infrared (NIR) up to about 1.6 μm. Focus is put on the special properties of the technology in relationship to the integration in CMOS as single-photon avalanche diodes (SPADs).",

author = "Nanver, {L. K.} and L. Qi and A. Sammak and Mok, {K. R.C.} and M. Aminian and E. Charbon",

year = "2014",

month = jan,

day = "26",

doi = "10.1109/ICSICT.2014.7021268",

language = "English",

editor = "Jia Zhou and Ting-Ao Tang",

booktitle = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",

publisher = "IEEE",

note = "12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, ICSICT 2014 ; Conference date: 28-10-2014 Through 31-10-2014",

}

Nanver, LK, Qi, L, Sammak, A, Mok, KRC, Aminian, M & Charbon, E 2014, Towards CMOS-compatible photon-counting imagers in the whole 10 nm - 1600 nm spectral range with PureB Si and PureGaB Ge-on-Si technology. in J Zhou & T-A Tang (eds), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014., 7021268, IEEE, 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, 28/10/14. https://doi.org/10.1109/ICSICT.2014.7021268

Towards CMOS-compatible photon-counting imagers in the whole 10 nm - 1600 nm spectral range with PureB Si and PureGaB Ge-on-Si technology. / Nanver, L. K.; Qi, L.; Sammak, A. et al.

Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. ed. / Jia Zhou; Ting-Ao Tang. IEEE, 2014. 7021268.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Towards CMOS-compatible photon-counting imagers in the whole 10 nm - 1600 nm spectral range with PureB Si and PureGaB Ge-on-Si technology

AU - Nanver, L. K.

AU - Qi, L.

AU - Sammak, A.

AU - Mok, K. R.C.

AU - Aminian, M.

AU - Charbon, E.

N1 - Conference code: 12

PY - 2014/1/26

Y1 - 2014/1/26

N2 - The paper gives an overview of the implementation of PureB Si photodiodes in the spectral range 10 nm - 400 nm and PureGaB Ge-on-Si photodiodes in the near infrared (NIR) up to about 1.6 μm. Focus is put on the special properties of the technology in relationship to the integration in CMOS as single-photon avalanche diodes (SPADs).

AB - The paper gives an overview of the implementation of PureB Si photodiodes in the spectral range 10 nm - 400 nm and PureGaB Ge-on-Si photodiodes in the near infrared (NIR) up to about 1.6 μm. Focus is put on the special properties of the technology in relationship to the integration in CMOS as single-photon avalanche diodes (SPADs).

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DO - 10.1109/ICSICT.2014.7021268

M3 - Conference contribution

AN - SCOPUS:84946692573

BT - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

A2 - Zhou, Jia

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ER -

Nanver LK, Qi L, Sammak A, Mok KRC, Aminian M, Charbon E. Towards CMOS-compatible photon-counting imagers in the whole 10 nm - 1600 nm spectral range with PureB Si and PureGaB Ge-on-Si technology. In Zhou J, Tang T-A, editors, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. IEEE. 2014. 7021268 doi: 10.1109/ICSICT.2014.7021268

Towards CMOS-compatible photon-counting imagers in the whole 10 nm - 1600 nm spectral range with PureB Si and PureGaB Ge-on-Si technology

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