Toward GHz Switching in SOI Light Emitting Diodes

Vidhu Puliyankot, Giulia Piccolo, Raymond J.E. Hueting, Jurriaan Schmitz (Corresponding Author)

    Research output: Contribution to journalArticleAcademicpeer-review

    1 Citation (Scopus)
    25 Downloads (Pure)

    Abstract

    In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that on-off keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency.

    Original languageEnglish
    Article number8457503
    Pages (from-to)4413-4420
    Number of pages8
    JournalIEEE transactions on electron devices
    Volume65
    Issue number10
    DOIs
    Publication statusPublished - 10 Sep 2018

    Fingerprint

    Light emitting diodes
    Light emission
    Silicon
    Diodes
    Geometry
    thiazole-4-carboxamide adenine dinucleotide
    Amplitude shift keying

    Keywords

    • Light emitting diodes
    • Light-emitting diodes (LEDs)
    • modeling
    • Optical switches
    • P-i-n diodes
    • Photonics
    • quantum efficiency
    • Silicon
    • silicon photonics
    • Silicon-on-insulator
    • simulation.

    Cite this

    @article{0ba58643bc1d489594b1e620dbcf512b,
    title = "Toward GHz Switching in SOI Light Emitting Diodes",
    abstract = "In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that on-off keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency.",
    keywords = "Light emitting diodes, Light-emitting diodes (LEDs), modeling, Optical switches, P-i-n diodes, Photonics, quantum efficiency, Silicon, silicon photonics, Silicon-on-insulator, simulation.",
    author = "Vidhu Puliyankot and Giulia Piccolo and Hueting, {Raymond J.E.} and Jurriaan Schmitz",
    year = "2018",
    month = "9",
    day = "10",
    doi = "10.1109/TED.2018.2866517",
    language = "English",
    volume = "65",
    pages = "4413--4420",
    journal = "IEEE transactions on electron devices",
    issn = "0018-9383",
    publisher = "IEEE",
    number = "10",

    }

    Toward GHz Switching in SOI Light Emitting Diodes. / Puliyankot, Vidhu; Piccolo, Giulia; Hueting, Raymond J.E.; Schmitz, Jurriaan (Corresponding Author).

    In: IEEE transactions on electron devices, Vol. 65, No. 10, 8457503, 10.09.2018, p. 4413-4420.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Toward GHz Switching in SOI Light Emitting Diodes

    AU - Puliyankot, Vidhu

    AU - Piccolo, Giulia

    AU - Hueting, Raymond J.E.

    AU - Schmitz, Jurriaan

    PY - 2018/9/10

    Y1 - 2018/9/10

    N2 - In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that on-off keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency.

    AB - In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that on-off keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency.

    KW - Light emitting diodes

    KW - Light-emitting diodes (LEDs)

    KW - modeling

    KW - Optical switches

    KW - P-i-n diodes

    KW - Photonics

    KW - quantum efficiency

    KW - Silicon

    KW - silicon photonics

    KW - Silicon-on-insulator

    KW - simulation.

    UR - http://www.scopus.com/inward/record.url?scp=85053112189&partnerID=8YFLogxK

    U2 - 10.1109/TED.2018.2866517

    DO - 10.1109/TED.2018.2866517

    M3 - Article

    AN - SCOPUS:85053112189

    VL - 65

    SP - 4413

    EP - 4420

    JO - IEEE transactions on electron devices

    JF - IEEE transactions on electron devices

    SN - 0018-9383

    IS - 10

    M1 - 8457503

    ER -