Toward GHz Switching in SOI Light Emitting Diodes

Vidhu Puliyankot; Giulia Piccolo; Raymond J.E. Hueting; Jurriaan Schmitz

doi:10.1109/TED.2018.2866517

Toward GHz Switching in SOI Light Emitting Diodes

Vidhu Puliyankot, Giulia Piccolo, Raymond J.E. Hueting, Jurriaan Schmitz (Corresponding Author)

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that on-off keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency.

Original language	English
Article number	8457503
Pages (from-to)	4413-4420
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	65
Issue number	10
DOIs	https://doi.org/10.1109/TED.2018.2866517
Publication status	Published - 10 Sept 2018

Keywords

Light emitting diodes
Light-emitting diodes (LEDs)
modeling
Optical switches
P-i-n diodes
Photonics
quantum efficiency
Silicon
silicon photonics
Silicon-on-insulator
simulation.

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10.1109/TED.2018.2866517

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@article{0ba58643bc1d489594b1e620dbcf512b,

title = "Toward GHz Switching in SOI Light Emitting Diodes",

abstract = "In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that on-off keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency.",

keywords = "Light emitting diodes, Light-emitting diodes (LEDs), modeling, Optical switches, P-i-n diodes, Photonics, quantum efficiency, Silicon, silicon photonics, Silicon-on-insulator, simulation.",

author = "Vidhu Puliyankot and Giulia Piccolo and Hueting, {Raymond J.E.} and Jurriaan Schmitz",

year = "2018",

month = sep,

day = "10",

doi = "10.1109/TED.2018.2866517",

language = "English",

volume = "65",

pages = "4413--4420",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "10",

}

TY - JOUR

T1 - Toward GHz Switching in SOI Light Emitting Diodes

AU - Puliyankot, Vidhu

AU - Piccolo, Giulia

AU - Hueting, Raymond J.E.

AU - Schmitz, Jurriaan

PY - 2018/9/10

Y1 - 2018/9/10

N2 - In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that on-off keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency.

AB - In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that on-off keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency.

KW - Light emitting diodes

KW - Light-emitting diodes (LEDs)

KW - modeling

KW - Optical switches

KW - P-i-n diodes

KW - Photonics

KW - quantum efficiency

KW - Silicon

KW - silicon photonics

KW - Silicon-on-insulator

KW - simulation.

U2 - 10.1109/TED.2018.2866517

DO - 10.1109/TED.2018.2866517

M3 - Article

AN - SCOPUS:85053112189

SN - 0018-9383

VL - 65

SP - 4413

EP - 4420

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 10

M1 - 8457503

ER -

Toward GHz Switching in SOI Light Emitting Diodes

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