Toward GHz Switching in SOI Light Emitting Diodes

Vidhu Puliyankot, Giulia Piccolo, Raymond J.E. Hueting, Jurriaan Schmitz (Corresponding Author)

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)
14 Downloads (Pure)

Abstract

In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that on-off keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency.

Original languageEnglish
Article number8457503
Pages (from-to)4413-4420
Number of pages8
JournalIEEE transactions on electron devices
Volume65
Issue number10
DOIs
Publication statusPublished - 10 Sep 2018

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Light emitting diodes
Light emission
Silicon
Diodes
Geometry
thiazole-4-carboxamide adenine dinucleotide
Amplitude shift keying

Keywords

  • Light emitting diodes
  • Light-emitting diodes (LEDs)
  • modeling
  • Optical switches
  • P-i-n diodes
  • Photonics
  • quantum efficiency
  • Silicon
  • silicon photonics
  • Silicon-on-insulator
  • simulation.

Cite this

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Toward GHz Switching in SOI Light Emitting Diodes. / Puliyankot, Vidhu; Piccolo, Giulia; Hueting, Raymond J.E.; Schmitz, Jurriaan (Corresponding Author).

In: IEEE transactions on electron devices, Vol. 65, No. 10, 8457503, 10.09.2018, p. 4413-4420.

Research output: Contribution to journalArticleAcademicpeer-review

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KW - Optical switches

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