Toward GHz Switching in SOI Light Emitting Diodes

Vidhu Puliyankot, Giulia Piccolo, Raymond J.E. Hueting, Jurriaan Schmitz (Corresponding Author)

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    1 Citation (Scopus)
    36 Downloads (Pure)

    Abstract

    In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that on-off keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency.

    Original languageEnglish
    Article number8457503
    Pages (from-to)4413-4420
    Number of pages8
    JournalIEEE transactions on electron devices
    Volume65
    Issue number10
    DOIs
    Publication statusPublished - 10 Sep 2018

    Keywords

    • Light emitting diodes
    • Light-emitting diodes (LEDs)
    • modeling
    • Optical switches
    • P-i-n diodes
    • Photonics
    • quantum efficiency
    • Silicon
    • silicon photonics
    • Silicon-on-insulator
    • simulation.

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