Abstract
In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that on-off keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency.
| Original language | English |
|---|---|
| Article number | 8457503 |
| Pages (from-to) | 4413-4420 |
| Number of pages | 8 |
| Journal | IEEE transactions on electron devices |
| Volume | 65 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 10 Sep 2018 |
Fingerprint
Keywords
- Light emitting diodes
- Light-emitting diodes (LEDs)
- modeling
- Optical switches
- P-i-n diodes
- Photonics
- quantum efficiency
- Silicon
- silicon photonics
- Silicon-on-insulator
- simulation.
Cite this
}
Toward GHz Switching in SOI Light Emitting Diodes. / Puliyankot, Vidhu; Piccolo, Giulia; Hueting, Raymond J.E.; Schmitz, Jurriaan (Corresponding Author).
In: IEEE transactions on electron devices, Vol. 65, No. 10, 8457503, 10.09.2018, p. 4413-4420.Research output: Contribution to journal › Article › Academic › peer-review
TY - JOUR
T1 - Toward GHz Switching in SOI Light Emitting Diodes
AU - Puliyankot, Vidhu
AU - Piccolo, Giulia
AU - Hueting, Raymond J.E.
AU - Schmitz, Jurriaan
PY - 2018/9/10
Y1 - 2018/9/10
N2 - In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that on-off keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency.
AB - In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that on-off keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency.
KW - Light emitting diodes
KW - Light-emitting diodes (LEDs)
KW - modeling
KW - Optical switches
KW - P-i-n diodes
KW - Photonics
KW - quantum efficiency
KW - Silicon
KW - silicon photonics
KW - Silicon-on-insulator
KW - simulation.
UR - http://www.scopus.com/inward/record.url?scp=85053112189&partnerID=8YFLogxK
U2 - 10.1109/TED.2018.2866517
DO - 10.1109/TED.2018.2866517
M3 - Article
VL - 65
SP - 4413
EP - 4420
JO - IEEE transactions on electron devices
JF - IEEE transactions on electron devices
SN - 0018-9383
IS - 10
M1 - 8457503
ER -