Toward GHz Switching in SOI Light Emitting Diodes

Vidhu Puliyankot, Giulia Piccolo, Raymond J.E. Hueting, Jurriaan Schmitz (Corresponding Author)

    Research output: Contribution to journal › Article › Academic › peer-review

    1 Citation (Scopus)
    25 Downloads (Pure)

    Abstract

    In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that on-off keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency.

    Original languageEnglish
    Article number8457503
    Pages (from-to)4413-4420
    Number of pages8
    JournalIEEE transactions on electron devices
    Volume65
    Issue number10
    DOIs
    Publication statusPublished - 10 Sep 2018

    Fingerprint

    Light emitting diodes
    Light emission
    Silicon
    Diodes
    Geometry
    thiazole-4-carboxamide adenine dinucleotide
    Amplitude shift keying

    Keywords

    • Light emitting diodes
    • Light-emitting diodes (LEDs)
    • modeling
    • Optical switches
    • P-i-n diodes
    • Photonics
    • quantum efficiency
    • Silicon
    • silicon photonics
    • Silicon-on-insulator
    • simulation.

    Cite this

    Puliyankot, Vidhu ; Piccolo, Giulia ; Hueting, Raymond J.E. ; Schmitz, Jurriaan. / Toward GHz Switching in SOI Light Emitting Diodes. In: IEEE transactions on electron devices. 2018 ; Vol. 65, No. 10. pp. 4413-4420.
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    abstract = "In this paper, we study the switching behavior of silicon-on-insulator light-emitting diodes (LEDs). Through the comparison of various device geometries, we establish the dimensional dependence of the switching speed of the LED. TCAD simulations are in line with the experimental results. Our findings indicate that on-off keying up to GHz frequencies should be feasible with such diodes, although a design optimized for higher frequency operation will exhibit a reduced light emission efficiency.",
    keywords = "Light emitting diodes, Light-emitting diodes (LEDs), modeling, Optical switches, P-i-n diodes, Photonics, quantum efficiency, Silicon, silicon photonics, Silicon-on-insulator, simulation.",
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    Puliyankot, V, Piccolo, G, Hueting, RJE & Schmitz, J 2018, 'Toward GHz Switching in SOI Light Emitting Diodes', IEEE transactions on electron devices, vol. 65, no. 10, 8457503, pp. 4413-4420. https://doi.org/10.1109/TED.2018.2866517

    Toward GHz Switching in SOI Light Emitting Diodes. / Puliyankot, Vidhu; Piccolo, Giulia; Hueting, Raymond J.E.; Schmitz, Jurriaan (Corresponding Author).

    In: IEEE transactions on electron devices, Vol. 65, No. 10, 8457503, 10.09.2018, p. 4413-4420.

    Research output: Contribution to journal › Article › Academic › peer-review

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    Puliyankot V, Piccolo G, Hueting RJE, Schmitz J. Toward GHz Switching in SOI Light Emitting Diodes. IEEE transactions on electron devices. 2018 Sep 10;65(10):4413-4420. 8457503. https://doi.org/10.1109/TED.2018.2866517

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