Abstract
In this paper, a novel technique for fabricating Transmission Electron Microscopy (TEM) chips for investigating structural and piezoelectric properties of Pulse Laser Deposited (PLD) Lead Zirconium Titanate (PZT) thin films is presented. The method involves silicon-on-insulator (SOI) wafer technology together with deep reactive ion etching (DRIE) and highly selective etchants. This study is unique in the sense that it will facilitate in-situ characterization of the PLD PZT membranes during actuation. As well as PLD PZT, the proposed method can be applied to a variety of materials by proper selection of the etchants and tuning of the process parameters. Being a critical step of the process sequence, the deposition profile of the PZT layer on the Lanthanum Nickel Oxide (LNO) seed layer is characterized prior to fabrication. The results reveal that the PLD process is not conformal and the thickness of the LNO/PZT layer is different on surfaces with different topographies.
Original language | Undefined |
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Title of host publication | Proceedings of the 22nd Micromechanics and Microsystems Technology Europe Workshop |
Place of Publication | Norway |
Publisher | Vestfold University College |
Pages | 287-290 |
Number of pages | 4 |
ISBN (Print) | 978-82-7860-224-9 |
Publication status | Published - 2011 |
Event | 22nd Micromechanics and Microsystems Europe Workshop, MME 2011 - Tønsberg, Norway Duration: 19 Jun 2011 → 22 Jun 2011 Conference number: 22 |
Publication series
Name | |
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Publisher | Vestfold University College, Department of Micro and Nano Systems Technology |
Conference
Conference | 22nd Micromechanics and Microsystems Europe Workshop, MME 2011 |
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Abbreviated title | MME |
Country/Territory | Norway |
City | Tønsberg |
Period | 19/06/11 → 22/06/11 |
Keywords
- TST-uSPAM: micro Scanning Probe Array Memory
- TST-SMI: Formerly in EWI-SMI
- EWI-21311
- Pulsed Laser Deposition (PLD)
- Transmission Electron Microscopy (TEM) Membrane
- Lead Zirconium Titanate (PZT)
- In-situ Analysis
- IR-79401
- METIS-287847