Towards on-chip high index contrast rare-earth-doped potassium double tungstate amplifiers

Mustafa Akin Sefunc, Valentina Vaiti, Meindert Dijkstra, Frans Segerink, Sonia M. Garcia-Blanco

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

The monoclinic double tungstate crystals are good candidates as host materials for rare-earth ions. Thanks to their crystalline nature, clustering of doping ions is avoided. High concentrations of active ions can therefore be achieved, which, together with the large absorption and emission cross sections of the active ions in these materials, leads to compact and efficient on-chip amplifiers and lasers. However, the fabrication of integrated on-chip waveguide amplifiers and lasers integrated with dielectrics or semiconductors is challenging. In this work, we will present our current efforts on the development of on-chip high index contrast waveguide amplifiers in rare-earth ion doped potassium double tungstates.

Original languageEnglish
Title of host publicationICTON 2015 - 17th International Conference on Transparent Optical Networks
PublisherIEEE Computer Society
Volume2015-August
ISBN (Electronic)9781467378802
DOIs
Publication statusPublished - 12 Aug 2015
Event17th International Conference on Transparent Optical Networks, ICTON 2015 - Budapest, Hungary
Duration: 5 Jul 20159 Jul 2015
Conference number: 17

Conference

Conference17th International Conference on Transparent Optical Networks, ICTON 2015
Abbreviated titleICTON
CountryHungary
CityBudapest
Period5/07/159/07/15

Fingerprint

Rare earths
Potassium
Ions
Waveguides
Lasers
Doping (additives)
tungstate
Semiconductor materials
Crystalline materials
Fabrication
Crystals

Keywords

  • bonding
  • heterogeneous integration
  • high contrast waveguide
  • optical amplifier
  • polishing
  • potassium double tungstate

Cite this

Sefunc, M. A., Vaiti, V., Dijkstra, M., Segerink, F., & Garcia-Blanco, S. M. (2015). Towards on-chip high index contrast rare-earth-doped potassium double tungstate amplifiers. In ICTON 2015 - 17th International Conference on Transparent Optical Networks (Vol. 2015-August). [7193489] IEEE Computer Society. https://doi.org/10.1109/ICTON.2015.7193489
Sefunc, Mustafa Akin ; Vaiti, Valentina ; Dijkstra, Meindert ; Segerink, Frans ; Garcia-Blanco, Sonia M. / Towards on-chip high index contrast rare-earth-doped potassium double tungstate amplifiers. ICTON 2015 - 17th International Conference on Transparent Optical Networks. Vol. 2015-August IEEE Computer Society, 2015.
@inproceedings{eb3b038145e64410b4ee0febcc9f5836,
title = "Towards on-chip high index contrast rare-earth-doped potassium double tungstate amplifiers",
abstract = "The monoclinic double tungstate crystals are good candidates as host materials for rare-earth ions. Thanks to their crystalline nature, clustering of doping ions is avoided. High concentrations of active ions can therefore be achieved, which, together with the large absorption and emission cross sections of the active ions in these materials, leads to compact and efficient on-chip amplifiers and lasers. However, the fabrication of integrated on-chip waveguide amplifiers and lasers integrated with dielectrics or semiconductors is challenging. In this work, we will present our current efforts on the development of on-chip high index contrast waveguide amplifiers in rare-earth ion doped potassium double tungstates.",
keywords = "bonding, heterogeneous integration, high contrast waveguide, optical amplifier, polishing, potassium double tungstate",
author = "Sefunc, {Mustafa Akin} and Valentina Vaiti and Meindert Dijkstra and Frans Segerink and Garcia-Blanco, {Sonia M.}",
year = "2015",
month = "8",
day = "12",
doi = "10.1109/ICTON.2015.7193489",
language = "English",
volume = "2015-August",
booktitle = "ICTON 2015 - 17th International Conference on Transparent Optical Networks",
publisher = "IEEE Computer Society",
address = "United States",

}

Sefunc, MA, Vaiti, V, Dijkstra, M, Segerink, F & Garcia-Blanco, SM 2015, Towards on-chip high index contrast rare-earth-doped potassium double tungstate amplifiers. in ICTON 2015 - 17th International Conference on Transparent Optical Networks. vol. 2015-August, 7193489, IEEE Computer Society, 17th International Conference on Transparent Optical Networks, ICTON 2015, Budapest, Hungary, 5/07/15. https://doi.org/10.1109/ICTON.2015.7193489

Towards on-chip high index contrast rare-earth-doped potassium double tungstate amplifiers. / Sefunc, Mustafa Akin; Vaiti, Valentina; Dijkstra, Meindert; Segerink, Frans; Garcia-Blanco, Sonia M.

ICTON 2015 - 17th International Conference on Transparent Optical Networks. Vol. 2015-August IEEE Computer Society, 2015. 7193489.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Towards on-chip high index contrast rare-earth-doped potassium double tungstate amplifiers

AU - Sefunc, Mustafa Akin

AU - Vaiti, Valentina

AU - Dijkstra, Meindert

AU - Segerink, Frans

AU - Garcia-Blanco, Sonia M.

PY - 2015/8/12

Y1 - 2015/8/12

N2 - The monoclinic double tungstate crystals are good candidates as host materials for rare-earth ions. Thanks to their crystalline nature, clustering of doping ions is avoided. High concentrations of active ions can therefore be achieved, which, together with the large absorption and emission cross sections of the active ions in these materials, leads to compact and efficient on-chip amplifiers and lasers. However, the fabrication of integrated on-chip waveguide amplifiers and lasers integrated with dielectrics or semiconductors is challenging. In this work, we will present our current efforts on the development of on-chip high index contrast waveguide amplifiers in rare-earth ion doped potassium double tungstates.

AB - The monoclinic double tungstate crystals are good candidates as host materials for rare-earth ions. Thanks to their crystalline nature, clustering of doping ions is avoided. High concentrations of active ions can therefore be achieved, which, together with the large absorption and emission cross sections of the active ions in these materials, leads to compact and efficient on-chip amplifiers and lasers. However, the fabrication of integrated on-chip waveguide amplifiers and lasers integrated with dielectrics or semiconductors is challenging. In this work, we will present our current efforts on the development of on-chip high index contrast waveguide amplifiers in rare-earth ion doped potassium double tungstates.

KW - bonding

KW - heterogeneous integration

KW - high contrast waveguide

KW - optical amplifier

KW - polishing

KW - potassium double tungstate

UR - http://www.scopus.com/inward/record.url?scp=84940927130&partnerID=8YFLogxK

U2 - 10.1109/ICTON.2015.7193489

DO - 10.1109/ICTON.2015.7193489

M3 - Conference contribution

AN - SCOPUS:84940927130

VL - 2015-August

BT - ICTON 2015 - 17th International Conference on Transparent Optical Networks

PB - IEEE Computer Society

ER -

Sefunc MA, Vaiti V, Dijkstra M, Segerink F, Garcia-Blanco SM. Towards on-chip high index contrast rare-earth-doped potassium double tungstate amplifiers. In ICTON 2015 - 17th International Conference on Transparent Optical Networks. Vol. 2015-August. IEEE Computer Society. 2015. 7193489 https://doi.org/10.1109/ICTON.2015.7193489