Towards understanding recovery of hot-carrier induced degradation

Maurits J. de Jong* (Corresponding Author), Cora Salm, Jurriaan Schmitz

*Corresponding author for this work

    Research output: Contribution to journalArticleAcademicpeer-review

    1 Citation (Scopus)
    52 Downloads (Pure)

    Abstract

    This article treats the recovery of hot-carrier degraded nMOSFETs by annealing in a nitrogen ambient. The recovery rate is investigated as a function of the annealing temperature, where the recovery for increasing temperatures is in agreement with the passivation processes. At the original post-metal anneal temperature of T = 400 °C, the device's original performance is fully restored. Higher temperatures induce a permanent, unrecoverable change to the devices, manifested in a gradual VT shift. The recovery rate is found to be independent of both the transistor gate length and the cooling rate (quench, slow and stepped cooling) upon annealing. These findings are used to gain further understanding of the mechanisms behind the recovery of hot-carrier damage. The recovery rate exhibits Arrhenius behavior and the recovery data are consistent with Stesmans’ recovery model.

    Original languageEnglish
    Pages (from-to)147-151
    Number of pages5
    JournalMicroelectronics reliability
    Volume88-90
    DOIs
    Publication statusPublished - 30 Sep 2018

    Fingerprint

    Hot carriers
    recovery
    degradation
    Recovery
    Degradation
    Annealing
    annealing
    Cooling
    cooling
    Temperature
    Passivation
    passivity
    temperature
    Transistors
    transistors
    Nitrogen
    Metals
    damage
    nitrogen
    shift

    Keywords

    • Hot-carrier injection
    • Hydrogen
    • Passivation
    • Recovery
    • Annealing

    Cite this

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    title = "Towards understanding recovery of hot-carrier induced degradation",
    abstract = "This article treats the recovery of hot-carrier degraded nMOSFETs by annealing in a nitrogen ambient. The recovery rate is investigated as a function of the annealing temperature, where the recovery for increasing temperatures is in agreement with the passivation processes. At the original post-metal anneal temperature of T = 400 °C, the device's original performance is fully restored. Higher temperatures induce a permanent, unrecoverable change to the devices, manifested in a gradual VT shift. The recovery rate is found to be independent of both the transistor gate length and the cooling rate (quench, slow and stepped cooling) upon annealing. These findings are used to gain further understanding of the mechanisms behind the recovery of hot-carrier damage. The recovery rate exhibits Arrhenius behavior and the recovery data are consistent with Stesmans’ recovery model.",
    keywords = "Hot-carrier injection, Hydrogen, Passivation, Recovery, Annealing",
    author = "{de Jong}, {Maurits J.} and Cora Salm and Jurriaan Schmitz",
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    Towards understanding recovery of hot-carrier induced degradation. / de Jong, Maurits J. (Corresponding Author); Salm, Cora; Schmitz, Jurriaan.

    In: Microelectronics reliability, Vol. 88-90, 30.09.2018, p. 147-151.

    Research output: Contribution to journalArticleAcademicpeer-review

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    T1 - Towards understanding recovery of hot-carrier induced degradation

    AU - de Jong, Maurits J.

    AU - Salm, Cora

    AU - Schmitz, Jurriaan

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    AB - This article treats the recovery of hot-carrier degraded nMOSFETs by annealing in a nitrogen ambient. The recovery rate is investigated as a function of the annealing temperature, where the recovery for increasing temperatures is in agreement with the passivation processes. At the original post-metal anneal temperature of T = 400 °C, the device's original performance is fully restored. Higher temperatures induce a permanent, unrecoverable change to the devices, manifested in a gradual VT shift. The recovery rate is found to be independent of both the transistor gate length and the cooling rate (quench, slow and stepped cooling) upon annealing. These findings are used to gain further understanding of the mechanisms behind the recovery of hot-carrier damage. The recovery rate exhibits Arrhenius behavior and the recovery data are consistent with Stesmans’ recovery model.

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