Transfer ratio of the spin-valve transistor

O.M.J. van 't Erve; R. Vlutters; P.S. Anil Kumar; S.D. Kim; F.M. Postma; R. Jansen; J.C. Lodder

Transfer ratio of the spin-valve transistor

O.M.J. van 't Erve, R. Vlutters, P.S. Anil Kumar, S.D. Kim, F.M. Postma, R. Jansen, J.C. Lodder

Research output: Contribution to journal › Article › Academic › peer-review

Abstract

We describe the factors that control the transfer ratio of the spin-valve transistor. An increase in transfer ratio is obtained by a systematic variation of the height of emitter and collector Schottky barrier, and of the nonmagnetic metals. Next, we found that in some cases, a thicker base leads to a higher transfer ratio. Finally, the thickness of the magnetic layers in the Ni 80 Fe 20 /Au/Co spin-valve base can be optimized for a maximum absolute change of collector current. An overall increase by a factor of 24 was achieved, without loss of the magnetocurrent.

Original language	Undefined
Pages (from-to)	3787-3789
Number of pages	3
Journal	Applied physics letters
Volume	80
Issue number	20
Publication status	Published - 2002

Keywords

EWI-5411
METIS-206176
IR-62954
SMI-NE: From 2006 in EWI-NE

Access to Document

http://eprints.eemcs.utwente.nl/secure2/5411/01/ERVE2002.PDF

Cite this

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title = "Transfer ratio of the spin-valve transistor",

abstract = "We describe the factors that control the transfer ratio of the spin-valve transistor. An increase in transfer ratio is obtained by a systematic variation of the height of emitter and collector Schottky barrier, and of the nonmagnetic metals. Next, we found that in some cases, a thicker base leads to a higher transfer ratio. Finally, the thickness of the magnetic layers in the Ni 80 Fe 20 /Au/Co spin-valve base can be optimized for a maximum absolute change of collector current. An overall increase by a factor of 24 was achieved, without loss of the magnetocurrent.",

keywords = "EWI-5411, METIS-206176, IR-62954, SMI-NE: From 2006 in EWI-NE",

author = "{van 't Erve}, O.M.J. and R. Vlutters and {Anil Kumar}, P.S. and S.D. Kim and F.M. Postma and R. Jansen and J.C. Lodder",

note = "Imported from SMI Reference manager",

year = "2002",

language = "Undefined",

volume = "80",

pages = "3787--3789",

journal = "Applied physics letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Transfer ratio of the spin-valve transistor

AU - van 't Erve, O.M.J.

AU - Vlutters, R.

AU - Anil Kumar, P.S.

AU - Kim, S.D.

AU - Postma, F.M.

AU - Jansen, R.

AU - Lodder, J.C.

N1 - Imported from SMI Reference manager

PY - 2002

Y1 - 2002

N2 - We describe the factors that control the transfer ratio of the spin-valve transistor. An increase in transfer ratio is obtained by a systematic variation of the height of emitter and collector Schottky barrier, and of the nonmagnetic metals. Next, we found that in some cases, a thicker base leads to a higher transfer ratio. Finally, the thickness of the magnetic layers in the Ni 80 Fe 20 /Au/Co spin-valve base can be optimized for a maximum absolute change of collector current. An overall increase by a factor of 24 was achieved, without loss of the magnetocurrent.

AB - We describe the factors that control the transfer ratio of the spin-valve transistor. An increase in transfer ratio is obtained by a systematic variation of the height of emitter and collector Schottky barrier, and of the nonmagnetic metals. Next, we found that in some cases, a thicker base leads to a higher transfer ratio. Finally, the thickness of the magnetic layers in the Ni 80 Fe 20 /Au/Co spin-valve base can be optimized for a maximum absolute change of collector current. An overall increase by a factor of 24 was achieved, without loss of the magnetocurrent.

KW - EWI-5411

KW - METIS-206176

KW - IR-62954

KW - SMI-NE: From 2006 in EWI-NE

M3 - Article

VL - 80

SP - 3787

EP - 3789

JO - Applied physics letters

JF - Applied physics letters

SN - 0003-6951

IS - 20

ER -