Transfer ratio of the spin-valve transistor

O.M.J. van 't Erve, R. Vlutters, P.S. Anil Kumar, S.D. Kim, F.M. Postma, R. Jansen, J.C. Lodder

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    We describe the factors that control the transfer ratio of the spin-valve transistor. An increase in transfer ratio is obtained by a systematic variation of the height of emitter and collector Schottky barrier, and of the nonmagnetic metals. Next, we found that in some cases, a thicker base leads to a higher transfer ratio. Finally, the thickness of the magnetic layers in the Ni 80 Fe 20 /Au/Co spin-valve base can be optimized for a maximum absolute change of collector current. An overall increase by a factor of 24 was achieved, without loss of the magnetocurrent.
    Original languageUndefined
    Pages (from-to)3787-3789
    Number of pages3
    JournalApplied physics letters
    Issue number20
    Publication statusPublished - 2002


    • EWI-5411
    • METIS-206176
    • IR-62954
    • SMI-NE: From 2006 in EWI-NE

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