Transfer ratio of the spin-valve transistor

O.M.J. van 't Erve; R. Vlutters; P.S. Anil Kumar; S.D. Kim; F.M. Postma; R. Jansen; J.C. Lodder

doi:10.1063/1.1480889

Transfer ratio of the spin-valve transistor

O.M.J. van 't Erve
, R. Vlutters
, P.S. Anil Kumar
, S.D. Kim
, F.M. Postma
, R. Jansen
, J.C. Lodder

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

We describe the factors that control the transfer ratio of the spin-valve transistor. An increase in transfer ratio is obtained by a systematic variation of the height of emitter and collector Schottky barrier, and of the nonmagnetic metals. Next, we found that in some cases, a thicker base leads to a higher transfer ratio. Finally, the thickness of the magnetic layers in the Ni 80 Fe 20 /Au/Co spin-valve base can be optimized for a maximum absolute change of collector current. An overall increase by a factor of 24 was achieved, without loss of the magnetocurrent.

Original language	English
Pages (from-to)	3787-3789
Number of pages	3
Journal	Applied physics letters
Volume	80
Issue number	20
DOIs	https://doi.org/10.1063/1.1480889
Publication status	Published - 2002

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title = "Transfer ratio of the spin-valve transistor",

abstract = "We describe the factors that control the transfer ratio of the spin-valve transistor. An increase in transfer ratio is obtained by a systematic variation of the height of emitter and collector Schottky barrier, and of the nonmagnetic metals. Next, we found that in some cases, a thicker base leads to a higher transfer ratio. Finally, the thickness of the magnetic layers in the Ni 80 Fe 20 /Au/Co spin-valve base can be optimized for a maximum absolute change of collector current. An overall increase by a factor of 24 was achieved, without loss of the magnetocurrent.",

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AU - van 't Erve, O.M.J.

AU - Vlutters, R.

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AU - Kim, S.D.

AU - Postma, F.M.

AU - Jansen, R.

AU - Lodder, J.C.

PY - 2002

Y1 - 2002

N2 - We describe the factors that control the transfer ratio of the spin-valve transistor. An increase in transfer ratio is obtained by a systematic variation of the height of emitter and collector Schottky barrier, and of the nonmagnetic metals. Next, we found that in some cases, a thicker base leads to a higher transfer ratio. Finally, the thickness of the magnetic layers in the Ni 80 Fe 20 /Au/Co spin-valve base can be optimized for a maximum absolute change of collector current. An overall increase by a factor of 24 was achieved, without loss of the magnetocurrent.

AB - We describe the factors that control the transfer ratio of the spin-valve transistor. An increase in transfer ratio is obtained by a systematic variation of the height of emitter and collector Schottky barrier, and of the nonmagnetic metals. Next, we found that in some cases, a thicker base leads to a higher transfer ratio. Finally, the thickness of the magnetic layers in the Ni 80 Fe 20 /Au/Co spin-valve base can be optimized for a maximum absolute change of collector current. An overall increase by a factor of 24 was achieved, without loss of the magnetocurrent.

U2 - 10.1063/1.1480889

DO - 10.1063/1.1480889

M3 - Article

SN - 0003-6951

VL - 80

SP - 3787

EP - 3789

JO - Applied physics letters

JF - Applied physics letters

IS - 20

ER -

Transfer ratio of the spin-valve transistor

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