Transient rapid thermal annealing of low-dose high-energy phosphorus implanted silicon

Research output: Contribution to journal › Article › Academic

Original language	Undefined
Pages (from-to)	418-422
Number of pages	0
Journal	Japanese journal of applied physics
Volume	30
Issue number	2
Publication status	Published - 1991

Keywords

@article{f755a27870c746688e1dd78d10562bc5,

title = "Transient rapid thermal annealing of low-dose high-energy phosphorus implanted silicon",

keywords = "METIS-112031",

author = "I. Barsony and J.L.P. Heideman and J.G.E. Klappe and J. Middelhoek",

year = "1991",

language = "Undefined",

volume = "30",

pages = "418--422",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "2",

}