Transient RTA of low-dose high energy phosphorus implanted silicon

I. Barsony, J.L.P. Heideman, J. Middelhoek

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    2 Citations (Scopus)
    Original languageUndefined
    Title of host publicationExtended abstracts 22nd Conference on Solid-State Devices and Materials
    Place of PublicationSendai, Japan
    Number of pages4
    Publication statusPublished - 22 Aug 1990


    • METIS-114023

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