TY - JOUR
T1 - Transistor performance of high-Tc three terminal devices based on carrier concentration modulation
AU - Joosse, Koen
AU - Boguslavskij, Yurij M.
AU - Vargas, Laura
AU - Gerritsma, Gerrit J.
AU - Rogalla, Horst
PY - 1995
Y1 - 1995
N2 - Electric field effect devices and quasiparticle injection effect devices are good candidates for the realization of three terminal devices from high-Tc materials, since they take explicit advantage of the low carrier concentration in these compounds. We describe the fabrication and operation of both types of devices, and discuss their performance as transistor-like elements
AB - Electric field effect devices and quasiparticle injection effect devices are good candidates for the realization of three terminal devices from high-Tc materials, since they take explicit advantage of the low carrier concentration in these compounds. We describe the fabrication and operation of both types of devices, and discuss their performance as transistor-like elements
U2 - 10.1109/77.403194
DO - 10.1109/77.403194
M3 - Article
SN - 1051-8223
VL - 5
SP - 2883
EP - 2886
JO - IEEE transactions on applied superconductivity
JF - IEEE transactions on applied superconductivity
IS - 2
ER -