Transistor performance of high-Tc three terminal devices based on carrier concentration modulation

Koen Joosse, Yurij M. Boguslavskij, Laura Vargas, Gerrit J. Gerritsma, Horst Rogalla

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)
32 Downloads (Pure)

Abstract

Electric field effect devices and quasiparticle injection effect devices are good candidates for the realization of three terminal devices from high-Tc materials, since they take explicit advantage of the low carrier concentration in these compounds. We describe the fabrication and operation of both types of devices, and discuss their performance as transistor-like elements
Original languageEnglish
Pages (from-to)2883-2886
Number of pages4
JournalIEEE transactions on applied superconductivity
Volume5
Issue number2
DOIs
Publication statusPublished - 1995

Fingerprint Dive into the research topics of 'Transistor performance of high-Tc three terminal devices based on carrier concentration modulation'. Together they form a unique fingerprint.

  • Cite this