Transistor performance of high-Tc three terminal devices based on carrier concentration modulation

Koen Joosse; Yurij M. Boguslavskij; Laura Vargas; Gerrit J. Gerritsma; Horst Rogalla

doi:10.1109/77.403194

Transistor performance of high-Tc three terminal devices based on carrier concentration modulation

Koen Joosse
, Yurij M. Boguslavskij
, Laura Vargas
, Gerrit J. Gerritsma
, Horst Rogalla

Faculty of Science and Technology

Research output: Contribution to journal › Conference article › Academic › peer-review

6 Citations (Scopus)

188 Downloads (Pure)

Abstract

Electric field effect devices and quasiparticle injection effect devices are good candidates for the realization of three terminal devices from high-Tc materials, since they take explicit advantage of the low carrier concentration in these compounds. We describe the fabrication and operation of both types of devices, and discuss their performance as transistor-like elements

Original language	English
Pages (from-to)	2883-2886
Number of pages	4
Journal	IEEE transactions on applied superconductivity
Volume	5
Issue number	2
DOIs	https://doi.org/10.1109/77.403194
Publication status	Published - 1995
Event	1994 Applied Superconductivity Conference, ASC 1994 - Boston, United States Duration: 15 Oct 1994 → 20 Oct 1994

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@article{bc17ceadffe140bf999dee1d4ba2d93e,

title = "Transistor performance of high-Tc three terminal devices based on carrier concentration modulation",

abstract = "Electric field effect devices and quasiparticle injection effect devices are good candidates for the realization of three terminal devices from high-Tc materials, since they take explicit advantage of the low carrier concentration in these compounds. We describe the fabrication and operation of both types of devices, and discuss their performance as transistor-like elements",

author = "Koen Joosse and Boguslavskij, \{Yurij M.\} and Laura Vargas and Gerritsma, \{Gerrit J.\} and Horst Rogalla",

year = "1995",

doi = "10.1109/77.403194",

language = "English",

volume = "5",

pages = "2883--2886",

journal = "IEEE transactions on applied superconductivity",

issn = "1051-8223",

publisher = "IEEE",

number = "2",

note = "1994 Applied Superconductivity Conference, ASC 1994, ASC ; Conference date: 15-10-1994 Through 20-10-1994",

}

TY - JOUR

T1 - Transistor performance of high-Tc three terminal devices based on carrier concentration modulation

AU - Joosse, Koen

AU - Boguslavskij, Yurij M.

AU - Vargas, Laura

AU - Gerritsma, Gerrit J.

AU - Rogalla, Horst

PY - 1995

Y1 - 1995

N2 - Electric field effect devices and quasiparticle injection effect devices are good candidates for the realization of three terminal devices from high-Tc materials, since they take explicit advantage of the low carrier concentration in these compounds. We describe the fabrication and operation of both types of devices, and discuss their performance as transistor-like elements

AB - Electric field effect devices and quasiparticle injection effect devices are good candidates for the realization of three terminal devices from high-Tc materials, since they take explicit advantage of the low carrier concentration in these compounds. We describe the fabrication and operation of both types of devices, and discuss their performance as transistor-like elements

U2 - 10.1109/77.403194

DO - 10.1109/77.403194

M3 - Conference article

SN - 1051-8223

VL - 5

SP - 2883

EP - 2886

JO - IEEE transactions on applied superconductivity

JF - IEEE transactions on applied superconductivity

IS - 2

T2 - 1994 Applied Superconductivity Conference, ASC 1994

Y2 - 15 October 1994 through 20 October 1994

ER -

Transistor performance of high-Tc three terminal devices based on carrier concentration modulation

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