Transmission Electron Microscopy on Interface Engineered Superconducting Thin Films

Sara Bals; Gustaav van Tendeloo; Augustinus J.H.M. Rijnders; Mark Huijben; V. Leca; David H.A. Blank

doi:10.1109/TASC.2003.812023

Transmission Electron Microscopy on Interface Engineered Superconducting Thin Films

Sara Bals, Gustaav van Tendeloo, Augustinus J.H.M. Rijnders, Mark Huijben, V. Leca, David H.A. Blank

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Transmission electron microscopy is used to evaluate different deposition techniques, which optimize the microstructure and physical properties of superconducting thin films. High-resolution electron microscopy proves that the use of an YBa2Cu2O buffer layer can avoid a variable interface configuration in YBa2Cu3O7 thin films grown on SrTiO3. The growth can also be controlled at an atomic level by using sub-unit cell layer epitaxy, which results in films with high quality and few structural defects. Epitaxial strain in Sr0 85La0 15CuO2 infinite layer thin films influences the critical temperature of these films, as well as the microstructure. Compressive stress is released by a modulated or a twinned microstructure, which eliminates superconductivity. On the other hand, also tensile strain seems to lower the critical temperature of the infinite layer.

Original language	Undefined
Pages (from-to)	2834-2837
Number of pages	4
Journal	IEEE transactions on applied superconductivity
Volume	13
Issue number	2
DOIs	https://doi.org/10.1109/TASC.2003.812023
Publication status	Published - 2003

Keywords

METIS-215290
IR-40849

Access to Document

10.1109/TASC.2003.812023

IEEEAS13_2003_2834

Cite this

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title = "Transmission Electron Microscopy on Interface Engineered Superconducting Thin Films",

abstract = "Transmission electron microscopy is used to evaluate different deposition techniques, which optimize the microstructure and physical properties of superconducting thin films. High-resolution electron microscopy proves that the use of an YBa2Cu2O buffer layer can avoid a variable interface configuration in YBa2Cu3O7 thin films grown on SrTiO3. The growth can also be controlled at an atomic level by using sub-unit cell layer epitaxy, which results in films with high quality and few structural defects. Epitaxial strain in Sr0 85La0 15CuO2 infinite layer thin films influences the critical temperature of these films, as well as the microstructure. Compressive stress is released by a modulated or a twinned microstructure, which eliminates superconductivity. On the other hand, also tensile strain seems to lower the critical temperature of the infinite layer.",

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T1 - Transmission Electron Microscopy on Interface Engineered Superconducting Thin Films

AU - Bals, Sara

AU - van Tendeloo, Gustaav

AU - Rijnders, Augustinus J.H.M.

AU - Huijben, Mark

AU - Leca, V.

AU - Blank, David H.A.

PY - 2003

Y1 - 2003

N2 - Transmission electron microscopy is used to evaluate different deposition techniques, which optimize the microstructure and physical properties of superconducting thin films. High-resolution electron microscopy proves that the use of an YBa2Cu2O buffer layer can avoid a variable interface configuration in YBa2Cu3O7 thin films grown on SrTiO3. The growth can also be controlled at an atomic level by using sub-unit cell layer epitaxy, which results in films with high quality and few structural defects. Epitaxial strain in Sr0 85La0 15CuO2 infinite layer thin films influences the critical temperature of these films, as well as the microstructure. Compressive stress is released by a modulated or a twinned microstructure, which eliminates superconductivity. On the other hand, also tensile strain seems to lower the critical temperature of the infinite layer.

AB - Transmission electron microscopy is used to evaluate different deposition techniques, which optimize the microstructure and physical properties of superconducting thin films. High-resolution electron microscopy proves that the use of an YBa2Cu2O buffer layer can avoid a variable interface configuration in YBa2Cu3O7 thin films grown on SrTiO3. The growth can also be controlled at an atomic level by using sub-unit cell layer epitaxy, which results in films with high quality and few structural defects. Epitaxial strain in Sr0 85La0 15CuO2 infinite layer thin films influences the critical temperature of these films, as well as the microstructure. Compressive stress is released by a modulated or a twinned microstructure, which eliminates superconductivity. On the other hand, also tensile strain seems to lower the critical temperature of the infinite layer.

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KW - IR-40849

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DO - 10.1109/TASC.2003.812023

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