Transport and noise properties of Si nanowire channels with different lengths before and after gamma radiation treatment

Jing Li; Svetlana Vitusevich; Mykhailo Petrychuk; Sergii Pud; Viktor Sydoruk; Boris Danilchenko; Andreas Offenhäusser

doi:10.1063/1.4848449

Transport and noise properties of Si nanowire channels with different lengths before and after gamma radiation treatment

Jing Li, Svetlana Vitusevich, Mykhailo Petrychuk, Sergii Pud, Viktor Sydoruk, Boris Danilchenko, Andreas Offenhäusser

Research output: Contribution to journal › Conference article › Academic › peer-review

Abstract

The transport properties of Si nanowire (NW) structures fabricated on the basis of silicon on insulator (SOI) wafers were studied using noise spectroscopy before and after treatment with small doses of gamma radiation. The total resistance obtained from the I-V characteristics of Si NW structures scaled perfectly with length. Normalized flicker noise demonstrated 1/L² dependence, which is a characteristic of dominant noise contribution from near-contact regions. The behavior changed to 1/L dependence after a small dose (1×10⁴ Gy) of gamma radiation treatment. Comparison of the random telegraph signal (RTS) noise parameters in the samples with small lengths before and after the treatment revealed a decrease in RTS amplitude and a shift to a lower frequency range after gamma irradiation. These results confirmed that the main changes in the samples were related to strain relaxation near-contact regions. In addition, such treatment resulted in a considerable decrease in the scattering data of device parameters.

Original language	English
Pages (from-to)	389-390
Number of pages	2
Journal	AIP Conference Proceedings
Volume	1566
Issue number	1
DOIs	https://doi.org/10.1063/1.4848449
Publication status	Published - 2013
Externally published	Yes
Event	31st International Conference on the Physics of Semiconductors, ICPS 2012 - Zurich, Switzerland Duration: 29 Jul 2012 → 3 Aug 2012 Conference number: 31

Keywords

Noise spectroscopy
Si nanowires
Transport properties

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10.1063/1.4848449

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title = "Transport and noise properties of Si nanowire channels with different lengths before and after gamma radiation treatment",

abstract = "The transport properties of Si nanowire (NW) structures fabricated on the basis of silicon on insulator (SOI) wafers were studied using noise spectroscopy before and after treatment with small doses of gamma radiation. The total resistance obtained from the I-V characteristics of Si NW structures scaled perfectly with length. Normalized flicker noise demonstrated 1/L2 dependence, which is a characteristic of dominant noise contribution from near-contact regions. The behavior changed to 1/L dependence after a small dose (1×104 Gy) of gamma radiation treatment. Comparison of the random telegraph signal (RTS) noise parameters in the samples with small lengths before and after the treatment revealed a decrease in RTS amplitude and a shift to a lower frequency range after gamma irradiation. These results confirmed that the main changes in the samples were related to strain relaxation near-contact regions. In addition, such treatment resulted in a considerable decrease in the scattering data of device parameters.",

keywords = "Noise spectroscopy, Si nanowires, Transport properties",

author = "Jing Li and Svetlana Vitusevich and Mykhailo Petrychuk and Sergii Pud and Viktor Sydoruk and Boris Danilchenko and Andreas Offenh{\"a}usser",

year = "2013",

doi = "10.1063/1.4848449",

language = "English",

volume = "1566",

pages = "389--390",

journal = "AIP Conference Proceedings",

issn = "0094-243X",

publisher = "American Institute of Physics",

number = "1",

note = "31st International Conference on the Physics of Semiconductors, ICPS 2012, ICPS 2012 ; Conference date: 29-07-2012 Through 03-08-2012",

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TY - JOUR

T1 - Transport and noise properties of Si nanowire channels with different lengths before and after gamma radiation treatment

AU - Li, Jing

AU - Vitusevich, Svetlana

AU - Petrychuk, Mykhailo

AU - Pud, Sergii

AU - Sydoruk, Viktor

AU - Danilchenko, Boris

AU - Offenhäusser, Andreas

N1 - Conference code: 31

PY - 2013

Y1 - 2013

N2 - The transport properties of Si nanowire (NW) structures fabricated on the basis of silicon on insulator (SOI) wafers were studied using noise spectroscopy before and after treatment with small doses of gamma radiation. The total resistance obtained from the I-V characteristics of Si NW structures scaled perfectly with length. Normalized flicker noise demonstrated 1/L2 dependence, which is a characteristic of dominant noise contribution from near-contact regions. The behavior changed to 1/L dependence after a small dose (1×104 Gy) of gamma radiation treatment. Comparison of the random telegraph signal (RTS) noise parameters in the samples with small lengths before and after the treatment revealed a decrease in RTS amplitude and a shift to a lower frequency range after gamma irradiation. These results confirmed that the main changes in the samples were related to strain relaxation near-contact regions. In addition, such treatment resulted in a considerable decrease in the scattering data of device parameters.

AB - The transport properties of Si nanowire (NW) structures fabricated on the basis of silicon on insulator (SOI) wafers were studied using noise spectroscopy before and after treatment with small doses of gamma radiation. The total resistance obtained from the I-V characteristics of Si NW structures scaled perfectly with length. Normalized flicker noise demonstrated 1/L2 dependence, which is a characteristic of dominant noise contribution from near-contact regions. The behavior changed to 1/L dependence after a small dose (1×104 Gy) of gamma radiation treatment. Comparison of the random telegraph signal (RTS) noise parameters in the samples with small lengths before and after the treatment revealed a decrease in RTS amplitude and a shift to a lower frequency range after gamma irradiation. These results confirmed that the main changes in the samples were related to strain relaxation near-contact regions. In addition, such treatment resulted in a considerable decrease in the scattering data of device parameters.

KW - Noise spectroscopy

KW - Si nanowires

KW - Transport properties

UR - http://www.scopus.com/inward/record.url?scp=84907344243&partnerID=8YFLogxK

U2 - 10.1063/1.4848449

DO - 10.1063/1.4848449

M3 - Conference article

AN - SCOPUS:84907344243

SN - 0094-243X

VL - 1566

SP - 389

EP - 390

JO - AIP Conference Proceedings

JF - AIP Conference Proceedings

IS - 1

T2 - 31st International Conference on the Physics of Semiconductors, ICPS 2012

Y2 - 29 July 2012 through 3 August 2012

ER -

Transport and noise properties of Si nanowire channels with different lengths before and after gamma radiation treatment

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Keywords

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