Abstract
The current mechanisms through 8 nm thermal oxide have been studied by integrating the MOS capacitor at the emitter-base junction in a bipolar NPN structure. The separation of the electron and hole flow into a collector and base current, respectively, enhances the possibility of identifying the origin of currents in MOS structures in general. Here, the temperature dependence of the generated charge carriers in relation to the tunneling current for both bias polarities on the gate has been measured. It is demonstrated that the anode hole injection concept can be excluded as the dominant current mechanism.
Original language | English |
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Title of host publication | ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference |
Editors | H. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe |
Publisher | IEEE |
Pages | 612-615 |
Number of pages | 4 |
ISBN (Print) | 9782863322482 |
DOIs | |
Publication status | Published - 1 Jan 2000 |
Externally published | Yes |
Event | 30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland Duration: 11 Sept 2000 → 13 Sept 2000 Conference number: 30 |
Conference
Conference | 30th European Solid-State Device Research Conference, ESSDERC 2000 |
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Abbreviated title | ESSDERC 2000 |
Country/Territory | Ireland |
City | Cork |
Period | 11/09/00 → 13/09/00 |