Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base

M. R. Van Den Berg, L. K. Nanver, C. R. De Boer, C. C.G. Visser, J. W. Slotboom

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

The current mechanisms through 8 nm thermal oxide have been studied by integrating the MOS capacitor at the emitter-base junction in a bipolar NPN structure. The separation of the electron and hole flow into a collector and base current, respectively, enhances the possibility of identifying the origin of currents in MOS structures in general. Here, the temperature dependence of the generated charge carriers in relation to the tunneling current for both bias polarities on the gate has been measured. It is demonstrated that the anode hole injection concept can be excluded as the dominant current mechanism.

Original languageEnglish
Title of host publicationESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
EditorsH. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
PublisherIEEE Computer Society Press
Pages612-615
Number of pages4
ISBN (Print)9782863322482
DOIs
Publication statusPublished - 1 Jan 2000
Externally publishedYes
Event30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland
Duration: 11 Sep 200013 Sep 2000
Conference number: 30

Conference

Conference30th European Solid-State Device Research Conference, ESSDERC 2000
Abbreviated titleESSDERC
CountryIreland
CityCork
Period11/09/0013/09/00

Fingerprint

MOS capacitors
Bipolar transistors
Charge carriers
Polysilicon
Anodes
Oxides
Electrons
Temperature
Hot Temperature

Cite this

Van Den Berg, M. R., Nanver, L. K., De Boer, C. R., Visser, C. C. G., & Slotboom, J. W. (2000). Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base. In H. Grunbacher, G. M. Crean, W. A. Lane, & F. A. McCabe (Eds.), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference (pp. 612-615). [1503782] IEEE Computer Society Press. https://doi.org/10.1109/ESSDERC.2000.194852
Van Den Berg, M. R. ; Nanver, L. K. ; De Boer, C. R. ; Visser, C. C.G. ; Slotboom, J. W. / Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base. ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. editor / H. Grunbacher ; Gabriel M. Crean ; W. A. Lane ; Frank A. McCabe. IEEE Computer Society Press, 2000. pp. 612-615
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abstract = "The current mechanisms through 8 nm thermal oxide have been studied by integrating the MOS capacitor at the emitter-base junction in a bipolar NPN structure. The separation of the electron and hole flow into a collector and base current, respectively, enhances the possibility of identifying the origin of currents in MOS structures in general. Here, the temperature dependence of the generated charge carriers in relation to the tunneling current for both bias polarities on the gate has been measured. It is demonstrated that the anode hole injection concept can be excluded as the dominant current mechanism.",
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Van Den Berg, MR, Nanver, LK, De Boer, CR, Visser, CCG & Slotboom, JW 2000, Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base. in H Grunbacher, GM Crean, WA Lane & FA McCabe (eds), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference., 1503782, IEEE Computer Society Press, pp. 612-615, 30th European Solid-State Device Research Conference, ESSDERC 2000, Cork, Ireland, 11/09/00. https://doi.org/10.1109/ESSDERC.2000.194852

Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base. / Van Den Berg, M. R.; Nanver, L. K.; De Boer, C. R.; Visser, C. C.G.; Slotboom, J. W.

ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. ed. / H. Grunbacher; Gabriel M. Crean; W. A. Lane; Frank A. McCabe. IEEE Computer Society Press, 2000. p. 612-615 1503782.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Van Den Berg MR, Nanver LK, De Boer CR, Visser CCG, Slotboom JW. Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base. In Grunbacher H, Crean GM, Lane WA, McCabe FA, editors, ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. IEEE Computer Society Press. 2000. p. 612-615. 1503782 https://doi.org/10.1109/ESSDERC.2000.194852