Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base

M. R. Van Den Berg*, L. K. Nanver, C. R. De Boer, C. C.G. Visser, J. W. Slotboom

*Corresponding author for this work

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The current mechanisms through 8 nm thermal oxide have been studied by integrating the MOS capacitor at the emitter-base junction in a bipolar NPN structure. The separation of the electron and hole flow into a collector and base current, respectively, enhances the possibility of identifying the origin of currents in MOS structures in general. Here, the temperature dependence of the generated charge carriers in relation to the tunneling current for both bias polarities on the gate has been measured. It is demonstrated that the anode hole injection concept can be excluded as the dominant current mechanism.

Original languageEnglish
Title of host publicationESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
EditorsH. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
Number of pages4
ISBN (Print)9782863322482
Publication statusPublished - 1 Jan 2000
Externally publishedYes
Event30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland
Duration: 11 Sept 200013 Sept 2000
Conference number: 30


Conference30th European Solid-State Device Research Conference, ESSDERC 2000
Abbreviated titleESSDERC 2000

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