Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base

M. R. Van Den Berg; L. K. Nanver; C. R. De Boer; C. C.G. Visser; J. W. Slotboom

doi:10.1109/ESSDERC.2000.194852

Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base

M. R. Van Den Berg^*, L. K. Nanver, C. R. De Boer, C. C.G. Visser, J. W. Slotboom

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

The current mechanisms through 8 nm thermal oxide have been studied by integrating the MOS capacitor at the emitter-base junction in a bipolar NPN structure. The separation of the electron and hole flow into a collector and base current, respectively, enhances the possibility of identifying the origin of currents in MOS structures in general. Here, the temperature dependence of the generated charge carriers in relation to the tunneling current for both bias polarities on the gate has been measured. It is demonstrated that the anode hole injection concept can be excluded as the dominant current mechanism.

Original language	English
Title of host publication	ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference
Editors	H. Grunbacher, Gabriel M. Crean, W. A. Lane, Frank A. McCabe
Publisher	IEEE
Pages	612-615
Number of pages	4
ISBN (Print)	9782863322482
DOIs	https://doi.org/10.1109/ESSDERC.2000.194852
Publication status	Published - 1 Jan 2000
Externally published	Yes
Event	30th European Solid-State Device Research Conference, ESSDERC 2000 - Cork, Ireland Duration: 11 Sept 2000 → 13 Sept 2000 Conference number: 30

Conference

Conference	30th European Solid-State Device Research Conference, ESSDERC 2000
Abbreviated title	ESSDERC 2000
Country/Territory	Ireland
City	Cork
Period	11/09/00 → 13/09/00

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10.1109/ESSDERC.2000.194852

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Van Den Berg, M. R., Nanver, L. K., De Boer, C. R., Visser, C. C. G., & Slotboom, J. W. (2000). Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base. In H. Grunbacher, G. M. Crean, W. A. Lane, & F. A. McCabe (Eds.), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference (pp. 612-615). [1503782] IEEE. https://doi.org/10.1109/ESSDERC.2000.194852

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title = "Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base",

abstract = "The current mechanisms through 8 nm thermal oxide have been studied by integrating the MOS capacitor at the emitter-base junction in a bipolar NPN structure. The separation of the electron and hole flow into a collector and base current, respectively, enhances the possibility of identifying the origin of currents in MOS structures in general. Here, the temperature dependence of the generated charge carriers in relation to the tunneling current for both bias polarities on the gate has been measured. It is demonstrated that the anode hole injection concept can be excluded as the dominant current mechanism.",

author = "{Van Den Berg}, {M. R.} and Nanver, {L. K.} and {De Boer}, {C. R.} and Visser, {C. C.G.} and Slotboom, {J. W.}",

year = "2000",

month = jan,

day = "1",

doi = "10.1109/ESSDERC.2000.194852",

language = "English",

isbn = "9782863322482",

pages = "612--615",

editor = "H. Grunbacher and Crean, {Gabriel M.} and Lane, {W. A.} and McCabe, {Frank A.}",

booktitle = "ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference",

publisher = "IEEE",

address = "United States",

note = "30th European Solid-State Device Research Conference, ESSDERC 2000, ESSDERC 2000 ; Conference date: 11-09-2000 Through 13-09-2000",

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Van Den Berg, MR, Nanver, LK, De Boer, CR, Visser, CCG & Slotboom, JW 2000, Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base. in H Grunbacher, GM Crean, WA Lane & FA McCabe (eds), ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference., 1503782, IEEE, pp. 612-615, 30th European Solid-State Device Research Conference, ESSDERC 2000, Cork, Ireland, 11/09/00. https://doi.org/10.1109/ESSDERC.2000.194852

Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base. / Van Den Berg, M. R.; Nanver, L. K.; De Boer, C. R. et al.
ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. ed. / H. Grunbacher; Gabriel M. Crean; W. A. Lane; Frank A. McCabe. IEEE, 2000. p. 612-615 1503782.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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N2 - The current mechanisms through 8 nm thermal oxide have been studied by integrating the MOS capacitor at the emitter-base junction in a bipolar NPN structure. The separation of the electron and hole flow into a collector and base current, respectively, enhances the possibility of identifying the origin of currents in MOS structures in general. Here, the temperature dependence of the generated charge carriers in relation to the tunneling current for both bias polarities on the gate has been measured. It is demonstrated that the anode hole injection concept can be excluded as the dominant current mechanism.

AB - The current mechanisms through 8 nm thermal oxide have been studied by integrating the MOS capacitor at the emitter-base junction in a bipolar NPN structure. The separation of the electron and hole flow into a collector and base current, respectively, enhances the possibility of identifying the origin of currents in MOS structures in general. Here, the temperature dependence of the generated charge carriers in relation to the tunneling current for both bias polarities on the gate has been measured. It is demonstrated that the anode hole injection concept can be excluded as the dominant current mechanism.

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Van Den Berg MR, Nanver LK, De Boer CR, Visser CCG, Slotboom JW. Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base. In Grunbacher H, Crean GM, Lane WA, McCabe FA, editors, ESSDERC 2000 - Proceedings of the 30th European Solid-State Device Research Conference. IEEE. 2000. p. 612-615. 1503782 doi: 10.1109/ESSDERC.2000.194852

Transport mechanisms of a polysilicon emitter bipolar transistor with 8 nm gate oxide between emitter and base

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