Tunable carrier type and density in graphene/PbZr0.2Ti 0.8O3 hybrid structures through ferroelectric switching

Christoph Baeumer, Steven P. Rogers, Ruijuan Xu, Lane W. Martin*, Moonsub Shim

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

80 Citations (Scopus)


Bidirectional interdependency between graphene doping level and ferroelectric polarization is demonstrated in graphene/PbZr0.2Ti 0.8O3 hybrid structures. The polarization of the PbZr 0.2Ti0.8O3 can be effectively switched with graphene electrodes and can in turn alter carrier type and density in the graphene. A complete reversal of the current-voltage hysteresis direction is observed in the graphene when external environmental factors are minimized, converting p-type graphene into n-type with an estimated carrier density change as large as ∼1013 cm-2. Nonvolatility and reversibility are also demonstrated.

Original languageEnglish
Pages (from-to)1693-1698
Number of pages6
JournalNano letters
Issue number4
Publication statusPublished - 10 Apr 2013
Externally publishedYes


  • CVD graphene
  • ferroelectrics
  • interface
  • PbZrTiO
  • polarization reversal


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