Tunable microwave notch filter created by stimulated Brillouin scattering in a silicon chip

A. Casas-Bedoya; B. Morrison; M. Pagani; D. Marpaung; B.J. Eggleton

doi:10.1117/12.2202488

Tunable microwave notch filter created by stimulated Brillouin scattering in a silicon chip

A. Casas-Bedoya, B. Morrison, M. Pagani, D. Marpaung, B.J. Eggleton

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

We show the first functional signal processing device based on forward stimulated Brillouin scattering from a silicon nanowire. We harness 1dB of SBS gain to create a high performance, energy efficient microwave photonic notch filter. The filter possess 48dB of suppression, 98 MHz linewidth, and is tunable within a 6 GHz bandwidth. This demonstration represents a significant advance in integrated microwave photonics with potential applications in on-chip microwave signal processing and establish the foundation towards the first CMOS-compatible high performance RF photonic filter.

Original language	English
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Volume	9668
DOIs	https://doi.org/10.1117/12.2202488
Publication status	Published - 2015
Externally published	Yes
Event	SPIE Micro+Nano Materials, Devices and Applications 2015 - Sydney, Australia Duration: 6 Dec 2015 → 9 Dec 2015

Conference

Conference	SPIE Micro+Nano Materials, Devices and Applications 2015
Country/Territory	Australia
City	Sydney
Period	6/12/15 → 9/12/15

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title = "Tunable microwave notch filter created by stimulated Brillouin scattering in a silicon chip",

abstract = "We show the first functional signal processing device based on forward stimulated Brillouin scattering from a silicon nanowire. We harness 1dB of SBS gain to create a high performance, energy efficient microwave photonic notch filter. The filter possess 48dB of suppression, 98 MHz linewidth, and is tunable within a 6 GHz bandwidth. This demonstration represents a significant advance in integrated microwave photonics with potential applications in on-chip microwave signal processing and establish the foundation towards the first CMOS-compatible high performance RF photonic filter.",

author = "A. Casas-Bedoya and B. Morrison and M. Pagani and D. Marpaung and B.J. Eggleton",

year = "2015",

doi = "10.1117/12.2202488",

language = "English",

volume = "9668",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

note = "SPIE Micro+Nano Materials, Devices and Applications 2015 ; Conference date: 06-12-2015 Through 09-12-2015",

}

Casas-Bedoya, A, Morrison, B, Pagani, M, Marpaung, D & Eggleton, BJ 2015, Tunable microwave notch filter created by stimulated Brillouin scattering in a silicon chip. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 9668, SPIE Micro+Nano Materials, Devices and Applications 2015, Sydney, New South Wales, Australia, 6/12/15. https://doi.org/10.1117/12.2202488

TY - GEN

T1 - Tunable microwave notch filter created by stimulated Brillouin scattering in a silicon chip

AU - Casas-Bedoya, A.

AU - Morrison, B.

AU - Pagani, M.

AU - Marpaung, D.

AU - Eggleton, B.J.

PY - 2015

Y1 - 2015

N2 - We show the first functional signal processing device based on forward stimulated Brillouin scattering from a silicon nanowire. We harness 1dB of SBS gain to create a high performance, energy efficient microwave photonic notch filter. The filter possess 48dB of suppression, 98 MHz linewidth, and is tunable within a 6 GHz bandwidth. This demonstration represents a significant advance in integrated microwave photonics with potential applications in on-chip microwave signal processing and establish the foundation towards the first CMOS-compatible high performance RF photonic filter.

AB - We show the first functional signal processing device based on forward stimulated Brillouin scattering from a silicon nanowire. We harness 1dB of SBS gain to create a high performance, energy efficient microwave photonic notch filter. The filter possess 48dB of suppression, 98 MHz linewidth, and is tunable within a 6 GHz bandwidth. This demonstration represents a significant advance in integrated microwave photonics with potential applications in on-chip microwave signal processing and establish the foundation towards the first CMOS-compatible high performance RF photonic filter.

UR - http://www.scopus.com/inward/record.url?eid=2-s2.0-84959924667&partnerID=MN8TOARS

U2 - 10.1117/12.2202488

DO - 10.1117/12.2202488

M3 - Conference contribution

VL - 9668

BT - Proceedings of SPIE - The International Society for Optical Engineering

T2 - SPIE Micro+Nano Materials, Devices and Applications 2015

Y2 - 6 December 2015 through 9 December 2015

ER -

Tunable microwave notch filter created by stimulated Brillouin scattering in a silicon chip

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