Tunable photonic strenght in porous GaP

J. Gómez Rivas; A. Lagendijk; R.W. Tjerkstra; D. Vanmaekelbergh; J.J. Kelly

doi:10.1063/1.1485316

Tunable photonic strenght in porous GaP

J. Gómez Rivas, A. Lagendijk, R.W. Tjerkstra, D. Vanmaekelbergh, J.J. Kelly

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Abstract

The light-scattering properties of porous gallium phosphide, prepared by electrochemical etching, are investigated. We show that the photonic strength of the porous semiconductor can be tuned from weak to extremely strong. This tunability is related to the density and size of the pores, which are controlled by the dopant density of the GaP crystals, and the etching potential. Moreover, electrochemical etching does not introduce any significant optical absorption, which makes porous GaP suitable for many photonic applications.

Original language	English
Pages (from-to)	4498-4500
Number of pages	3
Journal	Applied physics letters
Volume	80
Issue number	24
DOIs	https://doi.org/10.1063/1.1485316
Publication status	Published - 2002
Externally published	Yes

Keywords

Semiconductors
Light scattering
Etching
Optical absorption

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title = "Tunable photonic strenght in porous GaP",

abstract = "The light-scattering properties of porous gallium phosphide, prepared by electrochemical etching, are investigated. We show that the photonic strength of the porous semiconductor can be tuned from weak to extremely strong. This tunability is related to the density and size of the pores, which are controlled by the dopant density of the GaP crystals, and the etching potential. Moreover, electrochemical etching does not introduce any significant optical absorption, which makes porous GaP suitable for many photonic applications.",

keywords = "Semiconductors, Light scattering, Etching, Optical absorption",

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AU - Gómez Rivas, J.

AU - Lagendijk, A.

AU - Tjerkstra, R.W.

AU - Vanmaekelbergh, D.

AU - Kelly, J.J.

PY - 2002

Y1 - 2002

N2 - The light-scattering properties of porous gallium phosphide, prepared by electrochemical etching, are investigated. We show that the photonic strength of the porous semiconductor can be tuned from weak to extremely strong. This tunability is related to the density and size of the pores, which are controlled by the dopant density of the GaP crystals, and the etching potential. Moreover, electrochemical etching does not introduce any significant optical absorption, which makes porous GaP suitable for many photonic applications.

AB - The light-scattering properties of porous gallium phosphide, prepared by electrochemical etching, are investigated. We show that the photonic strength of the porous semiconductor can be tuned from weak to extremely strong. This tunability is related to the density and size of the pores, which are controlled by the dopant density of the GaP crystals, and the etching potential. Moreover, electrochemical etching does not introduce any significant optical absorption, which makes porous GaP suitable for many photonic applications.

KW - Semiconductors

KW - Light scattering

KW - Etching

KW - Optical absorption

U2 - 10.1063/1.1485316

DO - 10.1063/1.1485316

M3 - Article

SN - 0003-6951

VL - 80

SP - 4498

EP - 4500

JO - Applied physics letters

JF - Applied physics letters

IS - 24

ER -

Tunable photonic strenght in porous GaP

Abstract

Keywords

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