Tunable photonic strenght in porous GaP

J. Gómez Rivas, A. Lagendijk, R.W. Tjerkstra, D. Vanmaekelbergh, J.J. Kelly

Research output: Contribution to journalArticleAcademicpeer-review

42 Citations (Scopus)
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Abstract

The light-scattering properties of porous gallium phosphide, prepared by electrochemical etching, are investigated. We show that the photonic strength of the porous semiconductor can be tuned from weak to extremely strong. This tunability is related to the density and size of the pores, which are controlled by the dopant density of the GaP crystals, and the etching potential. Moreover, electrochemical etching does not introduce any significant optical absorption, which makes porous GaP suitable for many photonic applications.
Original languageEnglish
Pages (from-to)4498-4500
Number of pages3
JournalApplied physics letters
Volume80
Issue number24
DOIs
Publication statusPublished - 2002
Externally publishedYes

Keywords

  • Semiconductors
  • Light scattering
  • Etching
  • Optical absorption

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