Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets.

B.C. Min, K. Motohashi, J.C. Lodder, R. Jansen

Research output: Contribution to journalArticleAcademicpeer-review

150 Citations (Scopus)

Abstract

Magnetic tunnel junctions have become ubiquitous components appearing in magnetic random-access memory, read heads of magnetic disk drives and semiconductor-based spin devices. Inserting a tunnel barrier has been key to achieving spin injection from ferromagnetic (FM) metals into GaAs, but spin injection into Si has remained elusive. We show that Schottky barrier formation leads to a huge conductivity mismatch of the FM tunnel contact and Si, which cannot be solved by the well-known method of adjusting the tunnel barrier thickness. We present a radically different approach for spin-tunnelling resistance control using low-work-function ferromagnets, inserted at the FM/tunnel barrier interface. We demonstrate that in this way the resistance–area (RA) product of FM/Al2O3/Si contacts can be tuned over eight orders of magnitude, while simultaneously maintaining a reasonable tunnel spin polarization. This raises prospects for Si-based spintronics and presents a new category of ferromagnetic materials for spin-tunnel contacts in low-RA-product applications.
Original languageUndefined
Article number10.1038/nmat1736
Pages (from-to)817-822
Number of pages6
JournalNature materials
Volume5
Issue numbersuppl 2
DOIs
Publication statusPublished - 2006

Keywords

  • EWI-8591
  • IR-63827
  • METIS-237797

Cite this

Min, B. C., Motohashi, K., Lodder, J. C., & Jansen, R. (2006). Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets. Nature materials, 5(suppl 2), 817-822. [10.1038/nmat1736]. https://doi.org/10.1038/nmat1736
Min, B.C. ; Motohashi, K. ; Lodder, J.C. ; Jansen, R. / Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets. In: Nature materials. 2006 ; Vol. 5, No. suppl 2. pp. 817-822.
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abstract = "Magnetic tunnel junctions have become ubiquitous components appearing in magnetic random-access memory, read heads of magnetic disk drives and semiconductor-based spin devices. Inserting a tunnel barrier has been key to achieving spin injection from ferromagnetic (FM) metals into GaAs, but spin injection into Si has remained elusive. We show that Schottky barrier formation leads to a huge conductivity mismatch of the FM tunnel contact and Si, which cannot be solved by the well-known method of adjusting the tunnel barrier thickness. We present a radically different approach for spin-tunnelling resistance control using low-work-function ferromagnets, inserted at the FM/tunnel barrier interface. We demonstrate that in this way the resistance–area (RA) product of FM/Al2O3/Si contacts can be tuned over eight orders of magnitude, while simultaneously maintaining a reasonable tunnel spin polarization. This raises prospects for Si-based spintronics and presents a new category of ferromagnetic materials for spin-tunnel contacts in low-RA-product applications.",
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Min, BC, Motohashi, K, Lodder, JC & Jansen, R 2006, 'Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets.' Nature materials, vol. 5, no. suppl 2, 10.1038/nmat1736, pp. 817-822. https://doi.org/10.1038/nmat1736

Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets. / Min, B.C.; Motohashi, K.; Lodder, J.C.; Jansen, R.

In: Nature materials, Vol. 5, No. suppl 2, 10.1038/nmat1736, 2006, p. 817-822.

Research output: Contribution to journalArticleAcademicpeer-review

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T1 - Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets.

AU - Min, B.C.

AU - Motohashi, K.

AU - Lodder, J.C.

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N2 - Magnetic tunnel junctions have become ubiquitous components appearing in magnetic random-access memory, read heads of magnetic disk drives and semiconductor-based spin devices. Inserting a tunnel barrier has been key to achieving spin injection from ferromagnetic (FM) metals into GaAs, but spin injection into Si has remained elusive. We show that Schottky barrier formation leads to a huge conductivity mismatch of the FM tunnel contact and Si, which cannot be solved by the well-known method of adjusting the tunnel barrier thickness. We present a radically different approach for spin-tunnelling resistance control using low-work-function ferromagnets, inserted at the FM/tunnel barrier interface. We demonstrate that in this way the resistance–area (RA) product of FM/Al2O3/Si contacts can be tuned over eight orders of magnitude, while simultaneously maintaining a reasonable tunnel spin polarization. This raises prospects for Si-based spintronics and presents a new category of ferromagnetic materials for spin-tunnel contacts in low-RA-product applications.

AB - Magnetic tunnel junctions have become ubiquitous components appearing in magnetic random-access memory, read heads of magnetic disk drives and semiconductor-based spin devices. Inserting a tunnel barrier has been key to achieving spin injection from ferromagnetic (FM) metals into GaAs, but spin injection into Si has remained elusive. We show that Schottky barrier formation leads to a huge conductivity mismatch of the FM tunnel contact and Si, which cannot be solved by the well-known method of adjusting the tunnel barrier thickness. We present a radically different approach for spin-tunnelling resistance control using low-work-function ferromagnets, inserted at the FM/tunnel barrier interface. We demonstrate that in this way the resistance–area (RA) product of FM/Al2O3/Si contacts can be tuned over eight orders of magnitude, while simultaneously maintaining a reasonable tunnel spin polarization. This raises prospects for Si-based spintronics and presents a new category of ferromagnetic materials for spin-tunnel contacts in low-RA-product applications.

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Min BC, Motohashi K, Lodder JC, Jansen R. Tunable spin-tunnel contacts to silicon using low-work-function ferromagnets. Nature materials. 2006;5(suppl 2):817-822. 10.1038/nmat1736. https://doi.org/10.1038/nmat1736