Tuning a racetrack ring resonator by an integrated dielectric MEMS cantilever

S.M. Abdulla, L.J. Kauppinen, M. Dijkstra, M.J. de Boer, E. Berenschot, H.V. Jansen, R.M. de Ridder, G.J.M. Krijnen

    Research output: Contribution to journalArticleAcademicpeer-review

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    Abstract

    The principle, fabrication and characterization of a dielectric MEMS cantilever located a few 100 nm above a racetrack ring resonator are presented. After fabrication of the resonators on silicon-on-insulator (SOI) wafers in a foundry process, the cantilevers were integrated by surface micromachining techniques. Off-state deflections of the cantilevers have been optimized to appropriately position them near the evanescent field of the resonator. Using electrostatic actuation, moving the cantilevers into this evanescent field, the propagation properties of the ring waveguide are modulated. We demonstrate 122 pm tuning of the resonance wavelength of the optical ring resonator (in the optical C-band) without change of the optical quality factor, on application of 9 V to a 40 µm long cantilever. This compact integrated device can be used for tuning/switching a specific wavelength, with very little energy for operation and negligible cross talk with surrounding devices
    Original languageEnglish
    Pages (from-to)15864-15878
    Number of pages15
    JournalOptics express
    Volume19
    Issue number17
    DOIs
    Publication statusPublished - 15 Aug 2011

    Fingerprint

    microelectromechanical systems
    resonators
    tuning
    rings
    foundries
    fabrication
    C band
    micromachining
    actuation
    wavelengths
    deflection
    Q factors
    insulators
    wafers
    electrostatics
    waveguides
    propagation
    silicon
    energy

    Cite this

    Abdulla, S.M. ; Kauppinen, L.J. ; Dijkstra, M. ; de Boer, M.J. ; Berenschot, E. ; Jansen, H.V. ; de Ridder, R.M. ; Krijnen, G.J.M. / Tuning a racetrack ring resonator by an integrated dielectric MEMS cantilever. In: Optics express. 2011 ; Vol. 19, No. 17. pp. 15864-15878.
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    title = "Tuning a racetrack ring resonator by an integrated dielectric MEMS cantilever",
    abstract = "The principle, fabrication and characterization of a dielectric MEMS cantilever located a few 100 nm above a racetrack ring resonator are presented. After fabrication of the resonators on silicon-on-insulator (SOI) wafers in a foundry process, the cantilevers were integrated by surface micromachining techniques. Off-state deflections of the cantilevers have been optimized to appropriately position them near the evanescent field of the resonator. Using electrostatic actuation, moving the cantilevers into this evanescent field, the propagation properties of the ring waveguide are modulated. We demonstrate 122 pm tuning of the resonance wavelength of the optical ring resonator (in the optical C-band) without change of the optical quality factor, on application of 9 V to a 40 µm long cantilever. This compact integrated device can be used for tuning/switching a specific wavelength, with very little energy for operation and negligible cross talk with surrounding devices",
    author = "S.M. Abdulla and L.J. Kauppinen and M. Dijkstra and {de Boer}, M.J. and E. Berenschot and H.V. Jansen and {de Ridder}, R.M. and G.J.M. Krijnen",
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    language = "English",
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    Tuning a racetrack ring resonator by an integrated dielectric MEMS cantilever. / Abdulla, S.M.; Kauppinen, L.J.; Dijkstra, M.; de Boer, M.J.; Berenschot, E.; Jansen, H.V.; de Ridder, R.M.; Krijnen, G.J.M.

    In: Optics express, Vol. 19, No. 17, 15.08.2011, p. 15864-15878.

    Research output: Contribution to journalArticleAcademicpeer-review

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    T1 - Tuning a racetrack ring resonator by an integrated dielectric MEMS cantilever

    AU - Abdulla, S.M.

    AU - Kauppinen, L.J.

    AU - Dijkstra, M.

    AU - de Boer, M.J.

    AU - Berenschot, E.

    AU - Jansen, H.V.

    AU - de Ridder, R.M.

    AU - Krijnen, G.J.M.

    PY - 2011/8/15

    Y1 - 2011/8/15

    N2 - The principle, fabrication and characterization of a dielectric MEMS cantilever located a few 100 nm above a racetrack ring resonator are presented. After fabrication of the resonators on silicon-on-insulator (SOI) wafers in a foundry process, the cantilevers were integrated by surface micromachining techniques. Off-state deflections of the cantilevers have been optimized to appropriately position them near the evanescent field of the resonator. Using electrostatic actuation, moving the cantilevers into this evanescent field, the propagation properties of the ring waveguide are modulated. We demonstrate 122 pm tuning of the resonance wavelength of the optical ring resonator (in the optical C-band) without change of the optical quality factor, on application of 9 V to a 40 µm long cantilever. This compact integrated device can be used for tuning/switching a specific wavelength, with very little energy for operation and negligible cross talk with surrounding devices

    AB - The principle, fabrication and characterization of a dielectric MEMS cantilever located a few 100 nm above a racetrack ring resonator are presented. After fabrication of the resonators on silicon-on-insulator (SOI) wafers in a foundry process, the cantilevers were integrated by surface micromachining techniques. Off-state deflections of the cantilevers have been optimized to appropriately position them near the evanescent field of the resonator. Using electrostatic actuation, moving the cantilevers into this evanescent field, the propagation properties of the ring waveguide are modulated. We demonstrate 122 pm tuning of the resonance wavelength of the optical ring resonator (in the optical C-band) without change of the optical quality factor, on application of 9 V to a 40 µm long cantilever. This compact integrated device can be used for tuning/switching a specific wavelength, with very little energy for operation and negligible cross talk with surrounding devices

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