TY - JOUR
T1 - Tuning the Tunneling Rate and Dielectric Response of SAM-Based Junctions via a Single Polarizable Atom
AU - Wang, Dandan
AU - Fracasso, Davide
AU - Nurbawono, Argo
AU - Annadata, Harshini V.
AU - Sangeeth, C. S. Suchand
AU - Yuan, Li
AU - Nijhuis, Christian A.
PY - 2015/11/11
Y1 - 2015/11/11
N2 - The dielectric response and electrical properties of junctions based on self‐assembled monolayers (SAMs) of the form S(CH2)11X can be controlled by changing the polarizability of X (here X = H, F, Cl, Br, or I). A 1000‐fold increase in the tunneling rate and a four‐fold increase of the dielectric constant (ε r) with increasing polarizability of X are found.
AB - The dielectric response and electrical properties of junctions based on self‐assembled monolayers (SAMs) of the form S(CH2)11X can be controlled by changing the polarizability of X (here X = H, F, Cl, Br, or I). A 1000‐fold increase in the tunneling rate and a four‐fold increase of the dielectric constant (ε r) with increasing polarizability of X are found.
U2 - 10.1002/adma.201502968
DO - 10.1002/adma.201502968
M3 - Article
SN - 0935-9648
VL - 27
SP - 6689
EP - 6695
JO - Advanced materials
JF - Advanced materials
IS - 42
ER -