Tuning the Tunneling Rate and Dielectric Response of SAM-Based Junctions via a Single Polarizable Atom

Dandan Wang, Davide Fracasso, Argo Nurbawono, Harshini V. Annadata, C. S. Suchand Sangeeth, Li Yuan, Christian A. Nijhuis*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

18 Citations (Scopus)

Abstract

The dielectric response and electrical properties of junctions based on self‐assembled monolayers (SAMs) of the form S(CH2)11X can be controlled by changing the polarizability of X (here X = H, F, Cl, Br, or I). A 1000‐fold increase in the tunneling rate and a four‐fold increase of the dielectric constant (ε r) with increasing polarizability of X are found.
Original languageEnglish
Pages (from-to)6689-6695
JournalAdvanced materials
Volume27
Issue number42
DOIs
Publication statusPublished - 11 Nov 2015
Externally publishedYes

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