Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor

B.G. Park; T. Banerjee; B.C. Min; J.C. Lodder; R. Jansen

doi:10.1103/PhysRevB.73.172402

Tunnel spin polarization of Ni₈₀Fe₂₀/SiO₂ probed with a magnetic tunnel transistor

B.G. Park, T. Banerjee, B.C. Min, J.C. Lodder, R. Jansen

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The tunnel spin polarization of Ni80Fe20/SiO2 interfaces has been investigated using a magnetic tunnel transistor (MTT). The MTT with a Ni80Fe20/SiO2 emitter shows a magnetocurrent of 74% at 100 K, corresponding to a tunnel spin polarization of the Ni80Fe20/SiO2 interface of 27%. This is only slightly lower than the value of 34% for Ni80Fe20/Al2O3 interfaces determined in similar MTT structures. This suggests that SiO2 can be applied in semiconductor spintronic devices, for example in ferromagnet/SiO2/Si tunnel contacts for spin injection.

Original language	Undefined
Article number	10.1103/PhysRevB.73.172402
Pages (from-to)	172402
Number of pages	4
Journal	Physical review B: Condensed matter and materials physics
Volume	73
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevB.73.172402
Publication status	Published - 2006

Keywords

EWI-5232
IR-62912
METIS-238063

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10.1103/PhysRevB.73.172402

Park_10_1103

http://eprints.eemcs.utwente.nl/secure2/5232/01/Park_10_1103.pdf

Cite this

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abstract = "The tunnel spin polarization of Ni80Fe20/SiO2 interfaces has been investigated using a magnetic tunnel transistor (MTT). The MTT with a Ni80Fe20/SiO2 emitter shows a magnetocurrent of 74% at 100 K, corresponding to a tunnel spin polarization of the Ni80Fe20/SiO2 interface of 27%. This is only slightly lower than the value of 34% for Ni80Fe20/Al2O3 interfaces determined in similar MTT structures. This suggests that SiO2 can be applied in semiconductor spintronic devices, for example in ferromagnet/SiO2/Si tunnel contacts for spin injection.",

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AU - Park, B.G.

AU - Banerjee, T.

AU - Min, B.C.

AU - Lodder, J.C.

AU - Jansen, R.

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AB - The tunnel spin polarization of Ni80Fe20/SiO2 interfaces has been investigated using a magnetic tunnel transistor (MTT). The MTT with a Ni80Fe20/SiO2 emitter shows a magnetocurrent of 74% at 100 K, corresponding to a tunnel spin polarization of the Ni80Fe20/SiO2 interface of 27%. This is only slightly lower than the value of 34% for Ni80Fe20/Al2O3 interfaces determined in similar MTT structures. This suggests that SiO2 can be applied in semiconductor spintronic devices, for example in ferromagnet/SiO2/Si tunnel contacts for spin injection.

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