Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor

B.G. Park, T. Banerjee, B.C. Min, J.C. Lodder, R. Jansen

    Research output: Contribution to journalArticleAcademicpeer-review

    7 Citations (Scopus)
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    Abstract

    The tunnel spin polarization of Ni80Fe20/SiO2 interfaces has been investigated using a magnetic tunnel transistor (MTT). The MTT with a Ni80Fe20/SiO2 emitter shows a magnetocurrent of 74% at 100 K, corresponding to a tunnel spin polarization of the Ni80Fe20/SiO2 interface of 27%. This is only slightly lower than the value of 34% for Ni80Fe20/Al2O3 interfaces determined in similar MTT structures. This suggests that SiO2 can be applied in semiconductor spintronic devices, for example in ferromagnet/SiO2/Si tunnel contacts for spin injection.
    Original languageUndefined
    Article number10.1103/PhysRevB.73.172402
    Pages (from-to)172402
    Number of pages4
    JournalPhysical review B: Condensed matter and materials physics
    Volume73
    Issue number17
    DOIs
    Publication statusPublished - 2006

    Keywords

    • EWI-5232
    • IR-62912
    • METIS-238063

    Cite this

    Park, B. G., Banerjee, T., Min, B. C., Lodder, J. C., & Jansen, R. (2006). Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor. Physical review B: Condensed matter and materials physics, 73(17), 172402. [10.1103/PhysRevB.73.172402]. https://doi.org/10.1103/PhysRevB.73.172402
    Park, B.G. ; Banerjee, T. ; Min, B.C. ; Lodder, J.C. ; Jansen, R. / Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor. In: Physical review B: Condensed matter and materials physics. 2006 ; Vol. 73, No. 17. pp. 172402.
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    abstract = "The tunnel spin polarization of Ni80Fe20/SiO2 interfaces has been investigated using a magnetic tunnel transistor (MTT). The MTT with a Ni80Fe20/SiO2 emitter shows a magnetocurrent of 74{\%} at 100 K, corresponding to a tunnel spin polarization of the Ni80Fe20/SiO2 interface of 27{\%}. This is only slightly lower than the value of 34{\%} for Ni80Fe20/Al2O3 interfaces determined in similar MTT structures. This suggests that SiO2 can be applied in semiconductor spintronic devices, for example in ferromagnet/SiO2/Si tunnel contacts for spin injection.",
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    author = "B.G. Park and T. Banerjee and B.C. Min and J.C. Lodder and R. Jansen",
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    doi = "10.1103/PhysRevB.73.172402",
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    Park, BG, Banerjee, T, Min, BC, Lodder, JC & Jansen, R 2006, 'Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor', Physical review B: Condensed matter and materials physics, vol. 73, no. 17, 10.1103/PhysRevB.73.172402, pp. 172402. https://doi.org/10.1103/PhysRevB.73.172402

    Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor. / Park, B.G.; Banerjee, T.; Min, B.C.; Lodder, J.C.; Jansen, R.

    In: Physical review B: Condensed matter and materials physics, Vol. 73, No. 17, 10.1103/PhysRevB.73.172402, 2006, p. 172402.

    Research output: Contribution to journalArticleAcademicpeer-review

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    T1 - Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor

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    AU - Banerjee, T.

    AU - Min, B.C.

    AU - Lodder, J.C.

    AU - Jansen, R.

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    AB - The tunnel spin polarization of Ni80Fe20/SiO2 interfaces has been investigated using a magnetic tunnel transistor (MTT). The MTT with a Ni80Fe20/SiO2 emitter shows a magnetocurrent of 74% at 100 K, corresponding to a tunnel spin polarization of the Ni80Fe20/SiO2 interface of 27%. This is only slightly lower than the value of 34% for Ni80Fe20/Al2O3 interfaces determined in similar MTT structures. This suggests that SiO2 can be applied in semiconductor spintronic devices, for example in ferromagnet/SiO2/Si tunnel contacts for spin injection.

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