Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor

B.G. Park, T. Banerjee, B.C. Min, J.C. Lodder, R. Jansen

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    Abstract

    The tunnel spin polarization of Ni80Fe20/SiO2 interfaces has been investigated using a magnetic tunnel transistor (MTT). The MTT with a Ni80Fe20/SiO2 emitter shows a magnetocurrent of 74% at 100 K, corresponding to a tunnel spin polarization of the Ni80Fe20/SiO2 interface of 27%. This is only slightly lower than the value of 34% for Ni80Fe20/Al2O3 interfaces determined in similar MTT structures. This suggests that SiO2 can be applied in semiconductor spintronic devices, for example in ferromagnet/SiO2/Si tunnel contacts for spin injection.
    Original languageUndefined
    Article number10.1103/PhysRevB.73.172402
    Pages (from-to)172402
    Number of pages4
    JournalPhysical review B: Condensed matter and materials physics
    Volume73
    Issue number17
    DOIs
    Publication statusPublished - 2006

    Keywords

    • EWI-5232
    • IR-62912
    • METIS-238063

    Cite this

    Park, B. G., Banerjee, T., Min, B. C., Lodder, J. C., & Jansen, R. (2006). Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor. Physical review B: Condensed matter and materials physics, 73(17), 172402. [10.1103/PhysRevB.73.172402]. https://doi.org/10.1103/PhysRevB.73.172402