The tunnel spin polarization of Ni80Fe20/SiO2 interfaces has been investigated using a magnetic tunnel transistor (MTT). The MTT with a Ni80Fe20/SiO2 emitter shows a magnetocurrent of 74% at 100 K, corresponding to a tunnel spin polarization of the Ni80Fe20/SiO2 interface of 27%. This is only slightly lower than the value of 34% for Ni80Fe20/Al2O3 interfaces determined in similar MTT structures. This suggests that SiO2 can be applied in semiconductor spintronic devices, for example in ferromagnet/SiO2/Si tunnel contacts for spin injection.
|Number of pages||4|
|Journal||Physical review B: Condensed matter and materials physics|
|Publication status||Published - 2006|
Park, B. G., Banerjee, T., Min, B. C., Lodder, J. C., & Jansen, R. (2006). Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor. Physical review B: Condensed matter and materials physics, 73(17), 172402. [10.1103/PhysRevB.73.172402]. https://doi.org/10.1103/PhysRevB.73.172402