Abstract
The variation of the tunnel spin-polarization (TSP) with energy is determined using a magnetic tunnel
transistor, allowing quantification of the energy dependent TSP separately for both ferromagnet/insulator
interfaces and direct correlation with the tunnel magnetoresistance (TMR) measured in the same device.
The intrinsic TSP is reduced below the Fermi level, and more strongly so for tunneling into empty states
above the Fermi level. For artificially doped barriers, the low bias TMR decreases due to defect-assisted
tunneling. Yet, this mechanism becomes ineffective at large bias, where instead inelastic spin scattering
causes a strong TMR decay.
Original language | Undefined |
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Pages (from-to) | 217206 |
Number of pages | 4 |
Journal | Physical review letters |
Volume | 99 |
Issue number | 5 |
DOIs | |
Publication status | Published - 20 Nov 2007 |
Keywords
- METIS-247021
- IR-58276
- EWI-12094