Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

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    A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junction consisting of sapphire(substrate)/fcc-Co/CoO/AlOx/Al. The ferromagnetic Co layer is exchange coupled to the AFM CoO layer and drives rotation of the AFM moments in an external magnetic field. The results may help pave the way towards the development of spintronic devices based on AFM insulators.
    Original languageEnglish
    Article number15498
    Number of pages8
    JournalScientific reports
    Publication statusPublished - 21 Oct 2015


    • Electronic devices
    • Spintronics
    • IR-98294
    • Magnetic properties and materials
    • METIS-315052
    • EWI-26495


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