Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

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Abstract

A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junction consisting of sapphire(substrate)/fcc-Co/CoO/AlOx/Al. The ferromagnetic Co layer is exchange coupled to the AFM CoO layer and drives rotation of the AFM moments in an external magnetic field. The results may help pave the way towards the development of spintronic devices based on AFM insulators.
Original languageEnglish
Article number15498
Number of pages8
JournalScientific reports
Volume5
DOIs
Publication statusPublished - 21 Oct 2015

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tunnels
moments
tunnel junctions
sapphire
insulators
magnetic fields
metals

Keywords

  • Electronic devices
  • Spintronics
  • IR-98294
  • Magnetic properties and materials
  • METIS-315052
  • EWI-26495

Cite this

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title = "Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers",
abstract = "A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junction consisting of sapphire(substrate)/fcc-Co/CoO/AlOx/Al. The ferromagnetic Co layer is exchange coupled to the AFM CoO layer and drives rotation of the AFM moments in an external magnetic field. The results may help pave the way towards the development of spintronic devices based on AFM insulators.",
keywords = "Electronic devices, Spintronics, IR-98294, Magnetic properties and materials, METIS-315052, EWI-26495",
author = "Kai Wang and Sanderink, {Johannes G.M.} and Thijs Bolhuis and {van der Wiel}, {Wilfred Gerard} and {de Jong}, {Machiel Pieter}",
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Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers. / Wang, Kai; Sanderink, Johannes G.M.; Bolhuis, Thijs; van der Wiel, Wilfred Gerard; de Jong, Machiel Pieter.

In: Scientific reports, Vol. 5, 15498, 21.10.2015.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

AU - Wang, Kai

AU - Sanderink, Johannes G.M.

AU - Bolhuis, Thijs

AU - van der Wiel, Wilfred Gerard

AU - de Jong, Machiel Pieter

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N2 - A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junction consisting of sapphire(substrate)/fcc-Co/CoO/AlOx/Al. The ferromagnetic Co layer is exchange coupled to the AFM CoO layer and drives rotation of the AFM moments in an external magnetic field. The results may help pave the way towards the development of spintronic devices based on AFM insulators.

AB - A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junction consisting of sapphire(substrate)/fcc-Co/CoO/AlOx/Al. The ferromagnetic Co layer is exchange coupled to the AFM CoO layer and drives rotation of the AFM moments in an external magnetic field. The results may help pave the way towards the development of spintronic devices based on AFM insulators.

KW - Electronic devices

KW - Spintronics

KW - IR-98294

KW - Magnetic properties and materials

KW - METIS-315052

KW - EWI-26495

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DO - 10.1038/srep15498

M3 - Article

VL - 5

JO - Scientific reports

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