Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

Kai Wang; Johnny G.M. Sanderink; Thijs Bolhuis; Wilfred G. van der Wiel; Michel P. de Jong

doi:10.1038/srep15498

Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

Kai Wang, Johnny G.M. Sanderink, Thijs Bolhuis, Wilfred G. van der Wiel, Michel P. de Jong

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Abstract

A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junction consisting of sapphire(substrate)/fcc-Co/CoO/AlOx/Al. The ferromagnetic Co layer is exchange coupled to the AFM CoO layer and drives rotation of the AFM moments in an external magnetic field. The results may help pave the way towards the development of spintronic devices based on AFM insulators.

Original language	English
Article number	15498
Number of pages	8
Journal	Scientific reports
Volume	5
DOIs	https://doi.org/10.1038/srep15498
Publication status	Published - 21 Oct 2015

Keywords

Electronic devices
Spintronics
Magnetic properties and materials

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10.1038/srep15498Licence: CC BY

ArticleFinal published version, 1.38 MBLicence: CC BY

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title = "Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers",

abstract = "A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junction consisting of sapphire(substrate)/fcc-Co/CoO/AlOx/Al. The ferromagnetic Co layer is exchange coupled to the AFM CoO layer and drives rotation of the AFM moments in an external magnetic field. The results may help pave the way towards the development of spintronic devices based on AFM insulators.",

keywords = "Electronic devices, Spintronics, Magnetic properties and materials",

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AU - Wang, Kai

AU - Sanderink, Johnny G.M.

AU - Bolhuis, Thijs

AU - van der Wiel, Wilfred G.

AU - de Jong, Michel P.

N1 - eemcs-eprint-26495

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AB - A new approach in spintronics is based on spin-polarized charge transport phenomena governed by antiferromagnetic (AFM) materials. Recent studies have demonstrated the feasibility of this approach for AFM metals and semiconductors. We report tunneling anisotropic magnetoresistance (TAMR) due to the rotation of antiferromagnetic moments of an insulating CoO layer, incorporated into a tunnel junction consisting of sapphire(substrate)/fcc-Co/CoO/AlOx/Al. The ferromagnetic Co layer is exchange coupled to the AFM CoO layer and drives rotation of the AFM moments in an external magnetic field. The results may help pave the way towards the development of spintronic devices based on AFM insulators.

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KW - Spintronics

KW - Magnetic properties and materials

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M3 - Article

SN - 2045-2322

VL - 5

JO - Scientific reports

JF - Scientific reports

M1 - 15498

ER -

Tunnelling anisotropic magnetoresistance due to antiferromagnetic CoO tunnel barriers

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