Turn-on speed of grounded gate NMOS ESD protection transistors

G. Meneghesso, J.R.M. Luchies, F.G. Kuper, A.J. Mouthaan

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    Abstract

    The turn-on speed of nMOS transistors (nMOST) is of paramount importance for robust Charged Device Model (CDM) protection circuitry. In this paper the nMOST turn-on time has been measured for the first time in the sub-halve nanosecond range with a commercial e-beam tester. The method may be used to improve CDM-ESD hardness by investigating the CDM pulse responses within circuit. Furthermore it is shown that the CDM results of various protection layouts can be simulated with a SPICE model.
    Original languageEnglish
    Pages (from-to)1735-1738
    JournalMicroelectronics reliability
    Volume36
    Issue number11/12
    DOIs
    Publication statusPublished - 1996
    Event7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 1996 - University of Twente, Enschede, Netherlands
    Duration: 8 Oct 199611 Oct 1996
    Conference number: 7

    Keywords

    • METIS-111996
    • IR-15124

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