Two-Dimensional Electron Gases at Oxide Interfaces

J. Mannhart, David H.A. Blank, H.Y. Hwang, A.J. Millis, J.-M. Triscone

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Abstract

Two-dimensional electron gases (2DEGs) based on conventional semiconductors such as Si or GaAs have played a pivotal role in fundamental science and technology. The high mobilities achieved in 2DEGs enabled the discovery of the integer and fractional quantum Hall effects and are exploited in high-electron-mobility transistors. Recent work has shown that 2DEGs can also exist at oxide interfaces. These electron gases typically result from reconstruction of the complex electronic structure of the oxides, so that the electronic behavior of the interfaces can differ from the behavior of the bulk. Reports on magnetism and superconductivity in oxide 2DEGs illustrate their capability to encompass phenomena not shown by interfaces in conventional semiconductors. This article reviews the status and prospects of oxide 2DEGs
Original languageUndefined
Pages (from-to)1027-1034
Number of pages8
JournalMRS bulletin
Volume33
Publication statusPublished - 2008

Keywords

  • IR-75808
  • METIS-251737

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