TY - JOUR
T1 - Two-temperature model for pulsed-laser-induced subsurface modifications in Si
AU - Verburg, P.C.
AU - Römer, Gerardus Richardus, Bernardus, Engelina
AU - Huis in 't Veld, Bert
N1 - Online first
PY - 2014/3/1
Y1 - 2014/3/1
N2 - We investigated the laser–material interaction during the production of laser-induced subsurface modifications in silicon with a numerical model. Such modifications are of interest for subsurface wafer dicing. To predict the shape of these modifications, a two-temperature model and an optical model were combined. We compared the model results with experimental data obtained by focusing laser pulses in the bulk of silicon wafers using a microscope objective. This comparison revealed a good agreement between the simulations and the experimental results. A parameter study was performed to investigate the effect of the laser wavelength, pulse duration and pulse energy on the formation of subsurface modifications. We found that both single- and multi-photon absorption may be used to produce subsurface modifications in silicon
AB - We investigated the laser–material interaction during the production of laser-induced subsurface modifications in silicon with a numerical model. Such modifications are of interest for subsurface wafer dicing. To predict the shape of these modifications, a two-temperature model and an optical model were combined. We compared the model results with experimental data obtained by focusing laser pulses in the bulk of silicon wafers using a microscope objective. This comparison revealed a good agreement between the simulations and the experimental results. A parameter study was performed to investigate the effect of the laser wavelength, pulse duration and pulse energy on the formation of subsurface modifications. We found that both single- and multi-photon absorption may be used to produce subsurface modifications in silicon
KW - METIS-296858
KW - IR-86584
U2 - 10.1007/s00339-013-7668-5
DO - 10.1007/s00339-013-7668-5
M3 - Article
SN - 0947-8396
VL - 114
SP - 1135
EP - 1143
JO - Applied physics A: Materials science and processing
JF - Applied physics A: Materials science and processing
IS - 4
ER -