Two-temperature model for pulsed-laser-induced subsurface modifications in Si

P.C. Verburg, Gerardus Richardus, Bernardus, Engelina Römer, Bert Huis in 't Veld

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We investigated the laser–material interaction during the production of laser-induced subsurface modifications in silicon with a numerical model. Such modifications are of interest for subsurface wafer dicing. To predict the shape of these modifications, a two-temperature model and an optical model were combined. We compared the model results with experimental data obtained by focusing laser pulses in the bulk of silicon wafers using a microscope objective. This comparison revealed a good agreement between the simulations and the experimental results. A parameter study was performed to investigate the effect of the laser wavelength, pulse duration and pulse energy on the formation of subsurface modifications. We found that both single- and multi-photon absorption may be used to produce subsurface modifications in silicon
Original languageEnglish
Pages (from-to)1135-1143
JournalApplied physics A: Materials science and processing
Issue number4
Publication statusPublished - 1 Mar 2014


  • METIS-296858
  • IR-86584


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