Two-Terminal Molecular Memory through Reversible Switching of Quantum Interference Features in Tunneling Junctions

Marco Carlotti, Saurabh Soni, Sumit Kumar, Yong Ai, Eric Sauter, Michael Zharnikov, Ryan C. Chiechi*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

23 Citations (Scopus)

Abstract

Large-area molecular tunneling junctions comprising self-assembled monolayers of redox-active molecules are described that exhibit two-terminal bias switching. The as-prepared monolayers undergo partial charge transfer to the underlying metal substrate (Au, Pt, or Ag), which converts their cores from a quinoid to a hydroquinoid form. The resulting rearomatization converts the bond topology from a cross-conjugated to a linearly conjugated π system. The cross-conjugated form correlates to the appearance of an interference feature in the transmission spectrum that vanishes for the linearly conjugated form. Owing to the presence of electron-withdrawing nitrile groups, the reduction potential and the interference feature lie close to the work function and Fermi level of the metallic substrate. We exploited the relationship between conjugation patterns and quantum interference to create nonvolatile memory in proto-devices using eutectic Ga–In as the top contact.
Original languageEnglish
Pages (from-to)15681-15685
JournalAngewandte Chemie (international edition)
Volume57
Issue number48
DOIs
Publication statusPublished - 26 Nov 2018
Externally publishedYes

Keywords

  • eutectic gallium-indium
  • memory
  • molecular electronics
  • quantum interference
  • switching

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