Ultra-high gain in an Yb3+-doped dielectric waveguide

D. Geskus, S. Aravazhi, Sonia Maria García Blanco, Markus Pollnau

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

    12 Downloads (Pure)

    Abstract

    Thanks to high dopant concentration, large transition cross-sections, and strong light confinement, modal gain of ~1000 dB/cm, comparable to semiconductor optical amplifiers, is demonstrated in a large-refractive-index-contrast KGd0.535Yb0.475(WO4)2 channel waveguide on a KY(WO4)2 substrate.
    Original languageUndefined
    Title of host publication16th International Conference on Luminescence & Optical Sperctroscopy of Condensed Matter
    Place of PublicationAnn Arbor
    PublisherUniversity of Michigan
    PagesPaper ThDD6-p.60
    Number of pages2
    ISBN (Print)not assigned
    Publication statusPublished - Jun 2011
    Event16th International Conference on Luminescence and Optical Spectroscopy of Condensed Matter - Ann Arbor, United States
    Duration: 27 Jun 20111 Jul 2011
    Conference number: 16th

    Publication series

    NameConference Program
    PublisherUniversity of Michigan

    Conference

    Conference16th International Conference on Luminescence and Optical Spectroscopy of Condensed Matter
    Abbreviated titleICL 2011
    CountryUnited States
    CityAnn Arbor
    Period27/06/111/07/11

    Keywords

    • METIS-284908
    • IOMS-APD: Active Photonic Devices
    • EWI-20653
    • IR-79133

    Cite this

    Geskus, D., Aravazhi, S., García Blanco, S. M., & Pollnau, M. (2011). Ultra-high gain in an Yb3+-doped dielectric waveguide. In 16th International Conference on Luminescence & Optical Sperctroscopy of Condensed Matter (pp. Paper ThDD6-p.60). (Conference Program). Ann Arbor: University of Michigan.