Ultra-low-loss and broadband mode converters in Si3N4 technology

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Si3N4 grown by low pressure chemical vapor deposition (LPCVD) on thermally oxidized silicon wafers is largely utilized for creating integrated photonic devices due to its ultra-low propagation loss and large transparency window (400 nm to 2350 nm). In this paper, an ultra-low-loss and broadband mode converter for monolithic integration of different materials onto the passive Si3N4 photonic technology platform is presented. The mode size converter is constructed with a vertically tapered Si3N4 waveguide that is then buried by a polymer or an Al2O3 waveguide. The influence of the various design parameters on the converter characteristics are investigated. Optimal designs are proposed, in which the thickness of the Si3N4 waveguide is tapered from 200 nm to ∼40 nm. The calculated losses of the mode converters at 976 nm and 1550 nm wavelengths are well below 0.1 dB for the Si3N4-polymer coupler and below 0.3 dB for the Si3N4-Al2O3 coupler. The preliminary experimental results show good agreement with the design values, indicating that the mode converters can be utilized for the low-loss integration of different materials.

Original languageEnglish
Title of host publicationIntegrated Optics: Devices, Materials, and Technologies XXI
PublisherSPIE
Volume10106
ISBN (Electronic)9781510606531
DOIs
Publication statusPublished - 16 Feb 2017
EventSPIE Optoelectronics and Photonic Materials and Devices Conference, OPTO 2017 - The Moscone Center, San Francisco, United States
Duration: 30 Jan 20171 Feb 2017

Conference

ConferenceSPIE Optoelectronics and Photonic Materials and Devices Conference, OPTO 2017
Abbreviated titleOPTO
CountryUnited States
CitySan Francisco
Period30/01/171/02/17

Fingerprint

Converter
Broadband
converters
broadband
Waveguides
Waveguide
Coupler
waveguides
Photonics
couplers
Low pressure chemical vapor deposition
Polymers
Photonic devices
Monolithic Integration
photonics
Silicon wafers
Transparency
Chemical Vapor Deposition
polymers
Parameter Design

Keywords

  • Aluminium oxide
  • Mode converter
  • Monolithic integration
  • Silicon nitride
  • SU-8
  • Vertical taper

Cite this

Mu, J., Dijkstra, M., De Goede, M., Yong, Y. S., & García-Blanco, S. M. (2017). Ultra-low-loss and broadband mode converters in Si3N4 technology. In Integrated Optics: Devices, Materials, and Technologies XXI (Vol. 10106). [101060R] SPIE. https://doi.org/10.1117/12.2252706
Mu, Jinfeng ; Dijkstra, Meindert ; De Goede, Michiel ; Yong, Yean Sheng ; García-Blanco, Sonia M. / Ultra-low-loss and broadband mode converters in Si3N4 technology. Integrated Optics: Devices, Materials, and Technologies XXI. Vol. 10106 SPIE, 2017.
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abstract = "Si3N4 grown by low pressure chemical vapor deposition (LPCVD) on thermally oxidized silicon wafers is largely utilized for creating integrated photonic devices due to its ultra-low propagation loss and large transparency window (400 nm to 2350 nm). In this paper, an ultra-low-loss and broadband mode converter for monolithic integration of different materials onto the passive Si3N4 photonic technology platform is presented. The mode size converter is constructed with a vertically tapered Si3N4 waveguide that is then buried by a polymer or an Al2O3 waveguide. The influence of the various design parameters on the converter characteristics are investigated. Optimal designs are proposed, in which the thickness of the Si3N4 waveguide is tapered from 200 nm to ∼40 nm. The calculated losses of the mode converters at 976 nm and 1550 nm wavelengths are well below 0.1 dB for the Si3N4-polymer coupler and below 0.3 dB for the Si3N4-Al2O3 coupler. The preliminary experimental results show good agreement with the design values, indicating that the mode converters can be utilized for the low-loss integration of different materials.",
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Mu, J, Dijkstra, M, De Goede, M, Yong, YS & García-Blanco, SM 2017, Ultra-low-loss and broadband mode converters in Si3N4 technology. in Integrated Optics: Devices, Materials, and Technologies XXI. vol. 10106, 101060R, SPIE, SPIE Optoelectronics and Photonic Materials and Devices Conference, OPTO 2017, San Francisco, United States, 30/01/17. https://doi.org/10.1117/12.2252706

Ultra-low-loss and broadband mode converters in Si3N4 technology. / Mu, Jinfeng; Dijkstra, Meindert; De Goede, Michiel; Yong, Yean Sheng; García-Blanco, Sonia M.

Integrated Optics: Devices, Materials, and Technologies XXI. Vol. 10106 SPIE, 2017. 101060R.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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AB - Si3N4 grown by low pressure chemical vapor deposition (LPCVD) on thermally oxidized silicon wafers is largely utilized for creating integrated photonic devices due to its ultra-low propagation loss and large transparency window (400 nm to 2350 nm). In this paper, an ultra-low-loss and broadband mode converter for monolithic integration of different materials onto the passive Si3N4 photonic technology platform is presented. The mode size converter is constructed with a vertically tapered Si3N4 waveguide that is then buried by a polymer or an Al2O3 waveguide. The influence of the various design parameters on the converter characteristics are investigated. Optimal designs are proposed, in which the thickness of the Si3N4 waveguide is tapered from 200 nm to ∼40 nm. The calculated losses of the mode converters at 976 nm and 1550 nm wavelengths are well below 0.1 dB for the Si3N4-polymer coupler and below 0.3 dB for the Si3N4-Al2O3 coupler. The preliminary experimental results show good agreement with the design values, indicating that the mode converters can be utilized for the low-loss integration of different materials.

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Mu J, Dijkstra M, De Goede M, Yong YS, García-Blanco SM. Ultra-low-loss and broadband mode converters in Si3N4 technology. In Integrated Optics: Devices, Materials, and Technologies XXI. Vol. 10106. SPIE. 2017. 101060R https://doi.org/10.1117/12.2252706