Ultra-low-temperature low-ohmic contacts for SOA applications

L.K. Nanver*, H.W. van Zeijl, H. Schellevis, R.J.M. Mallee, J. Slabbekoorn, R. Dekker, J.W. Slotboom

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

15 Citations (Scopus)

Abstract

High-power excimer laser annealing is used to produce low-ohmic implanted contacts to both n- and p-type silicon diodes at thermal processing temperatures not exceeding 300°C. This is the maximum allowable temperature after gluing to glass in Silicon-on-Anything (SOA) processing. Bipolar NPN transistors have been fabricated with the emitter and base contacted on the front-wafer and the collector contacted directly under the emitter via the back-wafer after SOA processing.

Original languageEnglish
Title of host publicationProceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting
Pages137-140
Number of pages4
DOIs
Publication statusPublished - 1 Dec 1999
Externally publishedYes
Event1999 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1999) - Minneapolis, United States
Duration: 26 Sep 199928 Sep 1999

Conference

Conference1999 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1999)
Abbreviated titleBCTM 1999
CountryUnited States
CityMinneapolis
Period26/09/9928/09/99

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