Ultra-low-temperature low-ohmic contacts for SOA applications

L.K. Nanver; H.W. van Zeijl; H. Schellevis; R.J.M. Mallee; J. Slabbekoorn; R. Dekker; J.W. Slotboom

doi:10.1109/BIPOL.1999.803544

Ultra-low-temperature low-ohmic contacts for SOA applications

L.K. Nanver^*, H.W. van Zeijl, H. Schellevis, R.J.M. Mallee, J. Slabbekoorn, R. Dekker, J.W. Slotboom

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

15 Citations (Scopus)

Abstract

High-power excimer laser annealing is used to produce low-ohmic implanted contacts to both n- and p-type silicon diodes at thermal processing temperatures not exceeding 300°C. This is the maximum allowable temperature after gluing to glass in Silicon-on-Anything (SOA) processing. Bipolar NPN transistors have been fabricated with the emitter and base contacted on the front-wafer and the collector contacted directly under the emitter via the back-wafer after SOA processing.

Original language	English
Title of host publication	Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting
Pages	137-140
Number of pages	4
DOIs	https://doi.org/10.1109/BIPOL.1999.803544
Publication status	Published - 1 Dec 1999
Externally published	Yes
Event	1999 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1999) - Minneapolis, United States Duration: 26 Sept 1999 → 28 Sept 1999

Conference

Conference	1999 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1999)
Abbreviated title	BCTM 1999
Country/Territory	United States
City	Minneapolis
Period	26/09/99 → 28/09/99

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10.1109/BIPOL.1999.803544

Cite this

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title = "Ultra-low-temperature low-ohmic contacts for SOA applications",

abstract = "High-power excimer laser annealing is used to produce low-ohmic implanted contacts to both n- and p-type silicon diodes at thermal processing temperatures not exceeding 300°C. This is the maximum allowable temperature after gluing to glass in Silicon-on-Anything (SOA) processing. Bipolar NPN transistors have been fabricated with the emitter and base contacted on the front-wafer and the collector contacted directly under the emitter via the back-wafer after SOA processing.",

author = "L.K. Nanver and {van Zeijl}, H.W. and H. Schellevis and R.J.M. Mallee and J. Slabbekoorn and R. Dekker and J.W. Slotboom",

year = "1999",

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doi = "10.1109/BIPOL.1999.803544",

language = "English",

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booktitle = "Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting",

note = "1999 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1999), BCTM 1999 ; Conference date: 26-09-1999 Through 28-09-1999",

}

Nanver, LK, van Zeijl, HW, Schellevis, H, Mallee, RJM, Slabbekoorn, J, Dekker, R & Slotboom, JW 1999, Ultra-low-temperature low-ohmic contacts for SOA applications. in Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting. pp. 137-140, 1999 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1999), Minneapolis, Minnesota, United States, 26/09/99. https://doi.org/10.1109/BIPOL.1999.803544

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T1 - Ultra-low-temperature low-ohmic contacts for SOA applications

AU - Nanver, L.K.

AU - van Zeijl, H.W.

AU - Schellevis, H.

AU - Mallee, R.J.M.

AU - Slabbekoorn, J.

AU - Dekker, R.

AU - Slotboom, J.W.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - High-power excimer laser annealing is used to produce low-ohmic implanted contacts to both n- and p-type silicon diodes at thermal processing temperatures not exceeding 300°C. This is the maximum allowable temperature after gluing to glass in Silicon-on-Anything (SOA) processing. Bipolar NPN transistors have been fabricated with the emitter and base contacted on the front-wafer and the collector contacted directly under the emitter via the back-wafer after SOA processing.

AB - High-power excimer laser annealing is used to produce low-ohmic implanted contacts to both n- and p-type silicon diodes at thermal processing temperatures not exceeding 300°C. This is the maximum allowable temperature after gluing to glass in Silicon-on-Anything (SOA) processing. Bipolar NPN transistors have been fabricated with the emitter and base contacted on the front-wafer and the collector contacted directly under the emitter via the back-wafer after SOA processing.

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U2 - 10.1109/BIPOL.1999.803544

DO - 10.1109/BIPOL.1999.803544

M3 - Conference contribution

AN - SCOPUS:0033280452

SN - 0-7803-5712-4

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EP - 140

BT - Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting

T2 - 1999 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM 1999)

Y2 - 26 September 1999 through 28 September 1999

ER -

Ultra-low-temperature low-ohmic contacts for SOA applications

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