Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/Microwave technology

Lis K. Nanver, Viktor Gonda, Yann Civale, Tom L.M. Scholtes, Luigi La Spina, Hugo Schellevis, Gianpaolo Lorito, Francesco Sarubbi, Miloš Popadié, Koen Buisman, Silvana Milosavljevié, Egbert J.G. Goudena

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

This paper reviews several novel process modules developed for the processing of the backside of the wafer of our substrate-transfer technology called back-wafer-contacted silicon-on-glass (SOG), which is in use for fabricating RF/microwave devices such as high-quality varactors and bipolar transistors. In this technology the silicon wafer is transferred to glass by gluing. The integrity of the acrylic adhesive limits the subsequent processing temperatures to less than 300 °C. Ultra-low-temperature process modules have therefore been developed to nevertheless allow the creation of low-ohmic contacts and high-quality ultrashallow junctions. Moreover, a physical-vapor deposition of A1N provides an effective means of integrating a thin-film dielectric heatspreader.

Original languageEnglish
Title of host publicationICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages1184-1187
Number of pages4
DOIs
Publication statusPublished - 1 Dec 2008
Externally publishedYes
Event2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China
Duration: 20 Oct 200823 Oct 2008
Conference number: 9

Conference

Conference2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Abbreviated titleICSICT 2008
CountryChina
CityBeijing
Period20/10/0823/10/08

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