Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/Microwave technology

Lis K. Nanver; Viktor Gonda; Yann Civale; Tom L.M. Scholtes; Luigi La Spina; Hugo Schellevis; Gianpaolo Lorito; Francesco Sarubbi; Miloš Popadié; Koen Buisman; Silvana Milosavljevié; Egbert J.G. Goudena

doi:10.1109/ICSICT.2008.4734758

Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/Microwave technology

Lis K. Nanver, Viktor Gonda, Yann Civale, Tom L.M. Scholtes, Luigi La Spina, Hugo Schellevis, Gianpaolo Lorito, Francesco Sarubbi, Miloš Popadié, Koen Buisman, Silvana Milosavljevié, Egbert J.G. Goudena

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

This paper reviews several novel process modules developed for the processing of the backside of the wafer of our substrate-transfer technology called back-wafer-contacted silicon-on-glass (SOG), which is in use for fabricating RF/microwave devices such as high-quality varactors and bipolar transistors. In this technology the silicon wafer is transferred to glass by gluing. The integrity of the acrylic adhesive limits the subsequent processing temperatures to less than 300 °C. Ultra-low-temperature process modules have therefore been developed to nevertheless allow the creation of low-ohmic contacts and high-quality ultrashallow junctions. Moreover, a physical-vapor deposition of A1N provides an effective means of integrating a thin-film dielectric heatspreader.

Original language	English
Title of host publication	ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings
Pages	1184-1187
Number of pages	4
DOIs	https://doi.org/10.1109/ICSICT.2008.4734758
Publication status	Published - 1 Dec 2008
Externally published	Yes
Event	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008 - Beijing, China Duration: 20 Oct 2008 → 23 Oct 2008 Conference number: 9

Conference

Conference	2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008
Abbreviated title	ICSICT 2008
Country/Territory	China
City	Beijing
Period	20/10/08 → 23/10/08

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Nanver, L. K., Gonda, V., Civale, Y., Scholtes, T. L. M., Spina, L. L., Schellevis, H., Lorito, G., Sarubbi, F., Popadié, M., Buisman, K., Milosavljevié, S., & Goudena, E. J. G. (2008). Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/Microwave technology. In ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings (pp. 1184-1187). [4734758] https://doi.org/10.1109/ICSICT.2008.4734758

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title = "Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/Microwave technology",

abstract = "This paper reviews several novel process modules developed for the processing of the backside of the wafer of our substrate-transfer technology called back-wafer-contacted silicon-on-glass (SOG), which is in use for fabricating RF/microwave devices such as high-quality varactors and bipolar transistors. In this technology the silicon wafer is transferred to glass by gluing. The integrity of the acrylic adhesive limits the subsequent processing temperatures to less than 300 °C. Ultra-low-temperature process modules have therefore been developed to nevertheless allow the creation of low-ohmic contacts and high-quality ultrashallow junctions. Moreover, a physical-vapor deposition of A1N provides an effective means of integrating a thin-film dielectric heatspreader.",

author = "Nanver, {Lis K.} and Viktor Gonda and Yann Civale and Scholtes, {Tom L.M.} and Spina, {Luigi La} and Hugo Schellevis and Gianpaolo Lorito and Francesco Sarubbi and Milo{\v s} Popadi{\'e} and Koen Buisman and Silvana Milosavljevi{\'e} and Goudena, {Egbert J.G.}",

year = "2008",

month = dec,

day = "1",

doi = "10.1109/ICSICT.2008.4734758",

language = "English",

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pages = "1184--1187",

booktitle = "ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings",

note = "2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, ICSICT 2008 ; Conference date: 20-10-2008 Through 23-10-2008",

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Nanver, LK, Gonda, V, Civale, Y, Scholtes, TLM, Spina, LL, Schellevis, H, Lorito, G, Sarubbi, F, Popadié, M, Buisman, K, Milosavljevié, S & Goudena, EJG 2008, Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/Microwave technology. in ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings., 4734758, pp. 1184-1187, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, China, 20/10/08. https://doi.org/10.1109/ICSICT.2008.4734758

Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/Microwave technology. / Nanver, Lis K.; Gonda, Viktor; Civale, Yann et al.

ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings. 2008. p. 1184-1187 4734758.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

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AU - Nanver, Lis K.

AU - Gonda, Viktor

AU - Civale, Yann

AU - Scholtes, Tom L.M.

AU - Spina, Luigi La

AU - Schellevis, Hugo

AU - Lorito, Gianpaolo

AU - Sarubbi, Francesco

AU - Popadié, Miloš

AU - Buisman, Koen

AU - Milosavljevié, Silvana

AU - Goudena, Egbert J.G.

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N2 - This paper reviews several novel process modules developed for the processing of the backside of the wafer of our substrate-transfer technology called back-wafer-contacted silicon-on-glass (SOG), which is in use for fabricating RF/microwave devices such as high-quality varactors and bipolar transistors. In this technology the silicon wafer is transferred to glass by gluing. The integrity of the acrylic adhesive limits the subsequent processing temperatures to less than 300 °C. Ultra-low-temperature process modules have therefore been developed to nevertheless allow the creation of low-ohmic contacts and high-quality ultrashallow junctions. Moreover, a physical-vapor deposition of A1N provides an effective means of integrating a thin-film dielectric heatspreader.

AB - This paper reviews several novel process modules developed for the processing of the backside of the wafer of our substrate-transfer technology called back-wafer-contacted silicon-on-glass (SOG), which is in use for fabricating RF/microwave devices such as high-quality varactors and bipolar transistors. In this technology the silicon wafer is transferred to glass by gluing. The integrity of the acrylic adhesive limits the subsequent processing temperatures to less than 300 °C. Ultra-low-temperature process modules have therefore been developed to nevertheless allow the creation of low-ohmic contacts and high-quality ultrashallow junctions. Moreover, a physical-vapor deposition of A1N provides an effective means of integrating a thin-film dielectric heatspreader.

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EP - 1187

BT - ICSICT 2008 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology Proceedings

T2 - 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008

Y2 - 20 October 2008 through 23 October 2008

ER -

Ultra-low-temperature process modules for back-wafer-contacted silicon-on-glass RF/Microwave technology

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