Abstract
Reduced-pressure chemical-vapor-depositions (RPCVD) of arsenic and phosphorus monolayers on silicon are investigated as a damage-free source of ultra-shallow dopant diffusion when encapsulated under a deposited oxide. The encapsulation enhances the diffusion into the Si as compared to doping from the gaseous phase, which is confirmed by sheet-resistance measurements and current-voltage characterization of contacts and diodes fabricated with these layers. The latter show the transition from a p-Schottky diode to an n +p diode with increasing annealing temperature on p-doped samples. This effectively represents the means for SBH modulation by ultra-shallow doping. Process simulations have been found inadequate to describe the diffusion process, which, instead, was found to be a mixture of at least two physical mechanisms.
Original language | English |
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Title of host publication | 15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007 |
Pages | 95-100 |
Number of pages | 6 |
DOIs | |
Publication status | Published - 1 Dec 2007 |
Externally published | Yes |
Event | 15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007 - Catania, Italy Duration: 2 Oct 2007 → 5 Oct 2007 Conference number: 15 |
Conference
Conference | 15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007 |
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Abbreviated title | RTP 2007 |
Country/Territory | Italy |
City | Catania |
Period | 2/10/07 → 5/10/07 |