Ultra-shallow dopant diffusion from pre-deposited RPCVD monolayers ofarsenic and phosphorus

Miloš Popadić*, Lis K. Nanver, T. L.M. Scholtes

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)

Abstract

Reduced-pressure chemical-vapor-depositions (RPCVD) of arsenic and phosphorus monolayers on silicon are investigated as a damage-free source of ultra-shallow dopant diffusion when encapsulated under a deposited oxide. The encapsulation enhances the diffusion into the Si as compared to doping from the gaseous phase, which is confirmed by sheet-resistance measurements and current-voltage characterization of contacts and diodes fabricated with these layers. The latter show the transition from a p-Schottky diode to an n +p diode with increasing annealing temperature on p-doped samples. This effectively represents the means for SBH modulation by ultra-shallow doping. Process simulations have been found inadequate to describe the diffusion process, which, instead, was found to be a mixture of at least two physical mechanisms.

Original languageEnglish
Title of host publication15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007
Pages95-100
Number of pages6
DOIs
Publication statusPublished - 1 Dec 2007
Externally publishedYes
Event15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007 - Catania, Italy
Duration: 2 Oct 20075 Oct 2007
Conference number: 15

Conference

Conference15th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2007
Abbreviated titleRTP 2007
CountryItaly
CityCatania
Period2/10/075/10/07

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