Ultra shallow doping by excimer laser drive-in of RPCVD surface deposited arsenic monolayers

Milos Popadic; Lis K. Nanver; Cleber Biasotto; Viktor Gonda; Johan Van Der Cingel

doi:10.1109/RTP.2008.4690548

Ultra shallow doping by excimer laser drive-in of RPCVD surface deposited arsenic monolayers

Milos Popadic^*, Lis K. Nanver, Cleber Biasotto, Viktor Gonda, Johan Van Der Cingel

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Abstract

Reduced pressure CVD of arsenic has been investigated as a source of dopants in combination with excimer laser annealing (LA). Energy densities used for LA are above the Si melt limit and abrupt, highly doped, nearly defect-free, ultrashallow junctions have been formed. The junction depth is determined by the melt depth and is independent of the doping level, which is determined by the As deposition. Multiple LA of the surface deposited As layer was performed to yield improved uniformity while multiple cycles of As deposition plus LA have been performed to yield a higher dose and consequently lower sheet resistance, which in the case of three depositions drops to around 80 ω/sq for layers of an estimated depth of less than 20 nm. Near-ideal diode characteristics have been measured.

Original language	English
Title of host publication	16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008
Publisher	IEEE
Pages	141-146
Number of pages	6
ISBN (Electronic)	978-1-4244-1951-7
ISBN (Print)	978-1-4244-1950-0
DOIs	https://doi.org/10.1109/RTP.2008.4690548
Publication status	Published - 2 Dec 2008
Externally published	Yes
Event	16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008: New metrologies for annealing of USJs and thin films - Las Vegas, United States Duration: 30 Sept 2008 → 3 Oct 2008

Conference

Conference	16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008
Abbreviated title	RTP 2008
Country/Territory	United States
City	Las Vegas
Period	30/09/08 → 3/10/08

Access to Document

10.1109/RTP.2008.4690548

Cite this

@inproceedings{33b46f24c579476a8ebb587c9e99c774,

title = "Ultra shallow doping by excimer laser drive-in of RPCVD surface deposited arsenic monolayers",

abstract = "Reduced pressure CVD of arsenic has been investigated as a source of dopants in combination with excimer laser annealing (LA). Energy densities used for LA are above the Si melt limit and abrupt, highly doped, nearly defect-free, ultrashallow junctions have been formed. The junction depth is determined by the melt depth and is independent of the doping level, which is determined by the As deposition. Multiple LA of the surface deposited As layer was performed to yield improved uniformity while multiple cycles of As deposition plus LA have been performed to yield a higher dose and consequently lower sheet resistance, which in the case of three depositions drops to around 80 ω/sq for layers of an estimated depth of less than 20 nm. Near-ideal diode characteristics have been measured.",

author = "Milos Popadic and Nanver, {Lis K.} and Cleber Biasotto and Viktor Gonda and {Van Der Cingel}, Johan",

year = "2008",

month = dec,

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doi = "10.1109/RTP.2008.4690548",

language = "English",

isbn = "978-1-4244-1950-0",

pages = "141--146",

booktitle = "16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008",

publisher = "IEEE",

address = "United States",

note = "16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008 : New metrologies for annealing of USJs and thin films, RTP 2008 ; Conference date: 30-09-2008 Through 03-10-2008",

}

Popadic, M, Nanver, LK, Biasotto, C, Gonda, V & Van Der Cingel, J 2008, Ultra shallow doping by excimer laser drive-in of RPCVD surface deposited arsenic monolayers. in 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008., 4690548, IEEE, pp. 141-146, 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008, Las Vegas, Nevada, United States, 30/09/08. https://doi.org/10.1109/RTP.2008.4690548

Ultra shallow doping by excimer laser drive-in of RPCVD surface deposited arsenic monolayers. / Popadic, Milos; Nanver, Lis K.; Biasotto, Cleber et al.
16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008. IEEE, 2008. p. 141-146 4690548.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Ultra shallow doping by excimer laser drive-in of RPCVD surface deposited arsenic monolayers

AU - Popadic, Milos

AU - Nanver, Lis K.

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AU - Van Der Cingel, Johan

PY - 2008/12/2

Y1 - 2008/12/2

N2 - Reduced pressure CVD of arsenic has been investigated as a source of dopants in combination with excimer laser annealing (LA). Energy densities used for LA are above the Si melt limit and abrupt, highly doped, nearly defect-free, ultrashallow junctions have been formed. The junction depth is determined by the melt depth and is independent of the doping level, which is determined by the As deposition. Multiple LA of the surface deposited As layer was performed to yield improved uniformity while multiple cycles of As deposition plus LA have been performed to yield a higher dose and consequently lower sheet resistance, which in the case of three depositions drops to around 80 ω/sq for layers of an estimated depth of less than 20 nm. Near-ideal diode characteristics have been measured.

AB - Reduced pressure CVD of arsenic has been investigated as a source of dopants in combination with excimer laser annealing (LA). Energy densities used for LA are above the Si melt limit and abrupt, highly doped, nearly defect-free, ultrashallow junctions have been formed. The junction depth is determined by the melt depth and is independent of the doping level, which is determined by the As deposition. Multiple LA of the surface deposited As layer was performed to yield improved uniformity while multiple cycles of As deposition plus LA have been performed to yield a higher dose and consequently lower sheet resistance, which in the case of three depositions drops to around 80 ω/sq for layers of an estimated depth of less than 20 nm. Near-ideal diode characteristics have been measured.

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