Ultra shallow doping by excimer laser drive-in of RPCVD surface deposited arsenic monolayers

Milos Popadic*, Lis K. Nanver, Cleber Biasotto, Viktor Gonda, Johan Van Der Cingel

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)

Abstract

Reduced pressure CVD of arsenic has been investigated as a source of dopants in combination with excimer laser annealing (LA). Energy densities used for LA are above the Si melt limit and abrupt, highly doped, nearly defect-free, ultrashallow junctions have been formed. The junction depth is determined by the melt depth and is independent of the doping level, which is determined by the As deposition. Multiple LA of the surface deposited As layer was performed to yield improved uniformity while multiple cycles of As deposition plus LA have been performed to yield a higher dose and consequently lower sheet resistance, which in the case of three depositions drops to around 80 ω/sq for layers of an estimated depth of less than 20 nm. Near-ideal diode characteristics have been measured.

Original languageEnglish
Title of host publication16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008
PublisherIEEE
Pages141-146
Number of pages6
ISBN (Electronic)978-1-4244-1951-7
ISBN (Print)978-1-4244-1950-0
DOIs
Publication statusPublished - 2 Dec 2008
Externally publishedYes
Event16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008: New metrologies for annealing of USJs and thin films - Las Vegas, United States
Duration: 30 Sep 20083 Oct 2008

Conference

Conference16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008
Abbreviated titleRTP 2008
CountryUnited States
CityLas Vegas
Period30/09/083/10/08

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  • Cite this

    Popadic, M., Nanver, L. K., Biasotto, C., Gonda, V., & Van Der Cingel, J. (2008). Ultra shallow doping by excimer laser drive-in of RPCVD surface deposited arsenic monolayers. In 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008 (pp. 141-146). [4690548] IEEE. https://doi.org/10.1109/RTP.2008.4690548