Abstract
Reduced pressure CVD of arsenic has been investigated as a source of dopants in combination with excimer laser annealing (LA). Energy densities used for LA are above the Si melt limit and abrupt, highly doped, nearly defect-free, ultrashallow junctions have been formed. The junction depth is determined by the melt depth and is independent of the doping level, which is determined by the As deposition. Multiple LA of the surface deposited As layer was performed to yield improved uniformity while multiple cycles of As deposition plus LA have been performed to yield a higher dose and consequently lower sheet resistance, which in the case of three depositions drops to around 80 ω/sq for layers of an estimated depth of less than 20 nm. Near-ideal diode characteristics have been measured.
Original language | English |
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Title of host publication | 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008 |
Publisher | IEEE |
Pages | 141-146 |
Number of pages | 6 |
ISBN (Electronic) | 978-1-4244-1951-7 |
ISBN (Print) | 978-1-4244-1950-0 |
DOIs | |
Publication status | Published - 2 Dec 2008 |
Externally published | Yes |
Event | 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008: New metrologies for annealing of USJs and thin films - Las Vegas, United States Duration: 30 Sept 2008 → 3 Oct 2008 |
Conference
Conference | 16th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2008 |
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Abbreviated title | RTP 2008 |
Country/Territory | United States |
City | Las Vegas |
Period | 30/09/08 → 3/10/08 |