@inproceedings{149ce869f3fa46d1834f41257b421794,
title = "Ultra-shallow junction formation by outdiffusion from implanted oxide",
abstract = "We present a new method for the fabrication of shallow n+ and p+ junctions in silicon. The method consists of implanting a screening oxide followed by a diffusion step to drive the dopant into the silicon. This paper reports on the electrical and physical characteristics of these shallow junctions, and it show results obtained with sub-100 nm NMOS devices fabricated with these junctions.",
keywords = "Fabrication, Computational modeling, Electrical resistance measurement, Annealing, Implants, MOSFETs, MOS devices, Boron, Ion implantation, Silicon",
author = "J. Schmitz and {van Gestel}, M. and P.A. Stolk and Y.V. Ponomarev and F. Roozeboom and {van Berkum}, J.G.M. and P.C. Zalm and P.H. Woerlee",
year = "1998",
month = dec,
day = "1",
doi = "10.1109/IEDM.1998.746525",
language = "English",
isbn = "0-7803-4774-9",
series = "International Electron Devices Meeting, IEDM Technical Digest",
publisher = "IEEE",
pages = "1009--1012",
booktitle = "International Electron Devices Meeting, 1998, San Francisco, CA, December 6-9, 1998",
address = "United States",
note = "1998 IEEE International Electron Devices Meeting ; Conference date: 06-12-1998 Through 09-12-1998",
}