Ultra-shallow junction formation by outdiffusion from implanted oxide

J. Schmitz; M. van Gestel; P.A. Stolk; Y.V. Ponomarev; F. Roozeboom; J.G.M. van Berkum; P.C. Zalm; P.H. Woerlee

doi:10.1109/IEDM.1998.746525

Ultra-shallow junction formation by outdiffusion from implanted oxide

J. Schmitz^*, M. van Gestel, P.A. Stolk, Y.V. Ponomarev, F. Roozeboom, J.G.M. van Berkum, P.C. Zalm, P.H. Woerlee

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

11 Downloads (Pure)

Abstract

We present a new method for the fabrication of shallow n⁺ and p⁺ junctions in silicon. The method consists of implanting a screening oxide followed by a diffusion step to drive the dopant into the silicon. This paper reports on the electrical and physical characteristics of these shallow junctions, and it show results obtained with sub-100 nm NMOS devices fabricated with these junctions.

Original language	English
Title of host publication	International Electron Devices Meeting, 1998, San Francisco, CA, December 6-9, 1998
Subtitle of host publication	IEDM technical digest
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	1009-1012
Number of pages	4
ISBN (Electronic)	0-7803-4777-3
ISBN (Print)	0-7803-4774-9, 0-7803-4775-7
DOIs	https://doi.org/10.1109/IEDM.1998.746525
Publication status	Published - 1 Dec 1998
Externally published	Yes
Event	1998 IEEE International Electron Devices Meeting - San Francisco, United States Duration: 6 Dec 1998 → 9 Dec 1998

Publication series

Name	International Electron Devices Meeting, IEDM Technical Digest
Publisher	IEEE
Volume	1998
ISSN (Print)	0163-1918

Conference

Conference	1998 IEEE International Electron Devices Meeting
Country/Territory	United States
City	San Francisco
Period	6/12/98 → 9/12/98

Keywords

Fabrication
Computational modeling
Electrical resistance measurement
Annealing
Implants
MOSFETs
MOS devices
Boron
Ion implantation
Silicon

Access to Document

10.1109/IEDM.1998.746525

Ultra-shallow junction formation by outdiffusion from implanted oxideSubmitted version, 207 KBLicence: Unspecified

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Schmitz, J., van Gestel, M., Stolk, P. A., Ponomarev, Y. V., Roozeboom, F., van Berkum, J. G. M., Zalm, P. C., & Woerlee, P. H. (1998). Ultra-shallow junction formation by outdiffusion from implanted oxide. In International Electron Devices Meeting, 1998, San Francisco, CA, December 6-9, 1998: IEDM technical digest (pp. 1009-1012). (International Electron Devices Meeting, IEDM Technical Digest; Vol. 1998). IEEE. https://doi.org/10.1109/IEDM.1998.746525

Schmitz, J. ; van Gestel, M. ; Stolk, P.A. ; Ponomarev, Y.V. ; Roozeboom, F. ; van Berkum, J.G.M. ; Zalm, P.C. ; Woerlee, P.H. / Ultra-shallow junction formation by outdiffusion from implanted oxide. International Electron Devices Meeting, 1998, San Francisco, CA, December 6-9, 1998: IEDM technical digest. Piscataway, NJ : IEEE, 1998. pp. 1009-1012 (International Electron Devices Meeting, IEDM Technical Digest).

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title = "Ultra-shallow junction formation by outdiffusion from implanted oxide",

abstract = "We present a new method for the fabrication of shallow n+ and p+ junctions in silicon. The method consists of implanting a screening oxide followed by a diffusion step to drive the dopant into the silicon. This paper reports on the electrical and physical characteristics of these shallow junctions, and it show results obtained with sub-100 nm NMOS devices fabricated with these junctions.",

keywords = "Fabrication, Computational modeling, Electrical resistance measurement, Annealing, Implants, MOSFETs, MOS devices, Boron, Ion implantation, Silicon",

author = "J. Schmitz and {van Gestel}, M. and P.A. Stolk and Y.V. Ponomarev and F. Roozeboom and {van Berkum}, J.G.M. and P.C. Zalm and P.H. Woerlee",

year = "1998",

month = dec,

day = "1",

doi = "10.1109/IEDM.1998.746525",

language = "English",

isbn = "0-7803-4774-9",

series = "International Electron Devices Meeting, IEDM Technical Digest",

publisher = "IEEE",

pages = "1009--1012",

booktitle = "International Electron Devices Meeting, 1998, San Francisco, CA, December 6-9, 1998",

address = "United States",

note = "1998 IEEE International Electron Devices Meeting ; Conference date: 06-12-1998 Through 09-12-1998",

}

Schmitz, J, van Gestel, M, Stolk, PA, Ponomarev, YV, Roozeboom, F, van Berkum, JGM, Zalm, PC & Woerlee, PH 1998, Ultra-shallow junction formation by outdiffusion from implanted oxide. in International Electron Devices Meeting, 1998, San Francisco, CA, December 6-9, 1998: IEDM technical digest. International Electron Devices Meeting, IEDM Technical Digest, vol. 1998, IEEE, Piscataway, NJ, pp. 1009-1012, 1998 IEEE International Electron Devices Meeting, San Francisco, California, United States, 6/12/98. https://doi.org/10.1109/IEDM.1998.746525

Ultra-shallow junction formation by outdiffusion from implanted oxide. / Schmitz, J.; van Gestel, M.; Stolk, P.A.; Ponomarev, Y.V.; Roozeboom, F.; van Berkum, J.G.M.; Zalm, P.C.; Woerlee, P.H.

International Electron Devices Meeting, 1998, San Francisco, CA, December 6-9, 1998: IEDM technical digest. Piscataway, NJ : IEEE, 1998. p. 1009-1012 (International Electron Devices Meeting, IEDM Technical Digest; Vol. 1998).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Ultra-shallow junction formation by outdiffusion from implanted oxide

AU - Schmitz, J.

AU - van Gestel, M.

AU - Stolk, P.A.

AU - Ponomarev, Y.V.

AU - Roozeboom, F.

AU - van Berkum, J.G.M.

AU - Zalm, P.C.

AU - Woerlee, P.H.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - We present a new method for the fabrication of shallow n+ and p+ junctions in silicon. The method consists of implanting a screening oxide followed by a diffusion step to drive the dopant into the silicon. This paper reports on the electrical and physical characteristics of these shallow junctions, and it show results obtained with sub-100 nm NMOS devices fabricated with these junctions.

AB - We present a new method for the fabrication of shallow n+ and p+ junctions in silicon. The method consists of implanting a screening oxide followed by a diffusion step to drive the dopant into the silicon. This paper reports on the electrical and physical characteristics of these shallow junctions, and it show results obtained with sub-100 nm NMOS devices fabricated with these junctions.

KW - Fabrication

KW - Computational modeling

KW - Electrical resistance measurement

KW - Annealing

KW - Implants

KW - MOSFETs

KW - MOS devices

KW - Boron

KW - Ion implantation

KW - Silicon

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DO - 10.1109/IEDM.1998.746525

M3 - Conference contribution

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SN - 0-7803-4774-9

SN - 0-7803-4775-7

T3 - International Electron Devices Meeting, IEDM Technical Digest

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EP - 1012

BT - International Electron Devices Meeting, 1998, San Francisco, CA, December 6-9, 1998

PB - IEEE

CY - Piscataway, NJ

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ER -

Schmitz J, van Gestel M, Stolk PA, Ponomarev YV, Roozeboom F, van Berkum JGM et al. Ultra-shallow junction formation by outdiffusion from implanted oxide. In International Electron Devices Meeting, 1998, San Francisco, CA, December 6-9, 1998: IEDM technical digest. Piscataway, NJ: IEEE. 1998. p. 1009-1012. (International Electron Devices Meeting, IEDM Technical Digest). https://doi.org/10.1109/IEDM.1998.746525

Ultra-shallow junction formation by outdiffusion from implanted oxide

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