Ultra-shallow junction formation by outdiffusion from implanted oxide

J. Schmitz*, M. van Gestel, P.A. Stolk, Y.V. Ponomarev, F. Roozeboom, J.G.M. van Berkum, P.C. Zalm, P.H. Woerlee

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)
11 Downloads (Pure)


We present a new method for the fabrication of shallow n+ and p+ junctions in silicon. The method consists of implanting a screening oxide followed by a diffusion step to drive the dopant into the silicon. This paper reports on the electrical and physical characteristics of these shallow junctions, and it show results obtained with sub-100 nm NMOS devices fabricated with these junctions.

Original languageEnglish
Title of host publicationInternational Electron Devices Meeting, 1998, San Francisco, CA, December 6-9, 1998
Subtitle of host publicationIEDM technical digest
Place of PublicationPiscataway, NJ
Number of pages4
ISBN (Electronic)0-7803-4777-3
ISBN (Print)0-7803-4774-9, 0-7803-4775-7
Publication statusPublished - 1 Dec 1998
Externally publishedYes
Event1998 IEEE International Electron Devices Meeting - San Francisco, United States
Duration: 6 Dec 19989 Dec 1998

Publication series

NameInternational Electron Devices Meeting, IEDM Technical Digest
ISSN (Print)0163-1918


Conference1998 IEEE International Electron Devices Meeting
Country/TerritoryUnited States
CitySan Francisco


  • Fabrication
  • Computational modeling
  • Electrical resistance measurement
  • Annealing
  • Implants
  • MOS devices
  • Boron
  • Ion implantation
  • Silicon


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